STMICROELECTRONICS STB80NF55-08-1

STP80NF55-08
STB80NF55-08 STB80NF55-08-1
N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220
STripFET™ II POWER MOSFET
TYPE
STB80NF55-08/-1
STP80NF55-08
■
■
VDSS
RDS(on)
ID
55 V
55 V
<0.008 Ω
<0.008 Ω
80 A
80 A
TYPICAL RDS(on) = 0.0065Ω
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT
3
3
12
1
I2PAK
TO-262
D2PAK
TO-263
3
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
Value
Unit
Drain-source Voltage (VGS = 0)
Parameter
55
V
Drain-gate Voltage (RGS = 20 kΩ)
55
V
± 20
V
80
A
VGS
Gate- source Voltage
ID(•)
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
57
A
Drain Current (pulsed)
320
A
Total Dissipation at TC = 25°C
300
W
2
W/°C
870
mJ
-55 to 175
°C
IDM(••)
Ptot
Derating Factor
EAS (1)
Tstg
Tj
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
(•) Current limited by package
(••) Pulse width limited by safe operating area.
March 2002
.
(1) Starting Tj = 25 oC, ID = 40A, VDD = 30V
1/11
STB80NF55-08/-1 STP80NF55-08
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
0.5
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
V(BR)DSS
VGS = 0
Min.
Typ.
Max.
55
Unit
V
1
10
µA
µA
±100
nA
ON (*)
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS
ID = 250 µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V
ID = 40 A
Min.
Typ.
Max.
Unit
2
3
4
V
0.0065
0.008
Ω
Typ.
Max.
Unit
DYNAMIC
Symbol
2/11
Parameter
Test Conditions
gfs (*)
Forward Transconductance
VDS = 15 V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
ID = 18 A
Min.
40
S
3850
800
250
pF
pF
pF
STB80NF55-08/-1 STP80NF55-08
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
ID = 40 A
VDD = 30 V
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, Figure 3)
25
85
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 44V ID = 80 A VGS= 10V
115
24
46
155
nC
nC
nC
Typ.
Max.
Unit
ns
ns
SWITCHING OFF
Symbol
td(off)
tf
Parameter
Turn-off Delay Time
Fall Time
Test Conditions
Min.
ID = 40 A
VDD = 30 V
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
70
25
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*)
Forward On Voltage
ISD = 80 A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
di/dt = 100A/µs
ISD = 80 A
VDD = 25 V
Tj = 150°C
(see test circuit, Figure 5)
trr
Qrr
IRRM
Test Conditions
Min.
Typ.
VGS = 0
80
245
6.4
Max.
Unit
80
320
A
A
1.5
V
ns
nC
A
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/11
STB80NF55-08/-1 STP80NF55-08
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/11
STB80NF55-08/-1 STP80NF55-08
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
.
.
5/11
STB80NF55-08/-1 STP80NF55-08
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/11
STB80NF55-08/-1 STP80NF55-08
D2PAK MECHANICAL DATA
DIM.
mm.
MIN.
TYP.
inch.
MAX.
MIN.
TYP.
TYP.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.028
0.037
B2
1.14
1.7
0.045
0.067
C
0.45
0.6
0.018
0.024
C2
1.21
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
10.4
0.394
D1
8
0.315
E
10
E1
8.5
G
4.88
5.28
0.409
0.334
0.192
0.208
L
15
15.85
0.591
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.069
M
2.4
3.2
0.094
0.126
8°
0°
R
V2
0.4
0°
0.016
8°
7/11
STB80NF55-08/-1 STP80NF55-08
TO-262 (I2PAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
e
2.4
2.7
0.094
0.106
E
10
10.4
0.393
0.409
L
13.1
13.6
0.515
0.531
L1
3.48
3.78
0.137
0.149
L2
1.27
1.4
0.050
0.055
E
e
B
B2
C2
A1
A
C
A
L1
L2
D
L
P011P5/E
8/11
STB80NF55-08/-1 STP80NF55-08
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
MAX.
MIN.
A
4.40
TYP.
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
TYP.
1.27
MAX.
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
L2
0.409
16.4
0.645
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
C
D
A
E
L4
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
L4
P011C
9/11
STB80NF55-08/-1 STP80NF55-08
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A0
10.5
10.7
0.413
0.421
B0
15.7
15.9
0.618
0.626
D
1.5
1.6
0.059
0.063
D1
1.59
1.61
0.062
0.063
E
1.65
1.85
0.065
0.073
F
11.4
11.6
0.449
0.456
K0
4.8
5.0
0.189
0.197
P0
3.9
4.1
0.153
0.161
P1
11.9
12.1
0.468
0.476
P2
1.9
2.1
0075
0.082
R
50
T
0.25
0.35
.0.0098
0.0137
W
23.7
24.3
0.933
0.956
* on sales type
10/11
1.574
MIN.
330
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
inch
MAX.
MAX.
12.992
0.059
13.2
0.504
0.520
0.795
26.4
0.960
1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STB80NF55-08/-1 STP80NF55-08
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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11/11