STP45NF06L STB45NF06L N-CHANNEL 60V - 0.022Ω - 38A TO-220 / D2PAK STripFET™ II POWER MOSFET TYPE STP45NF06L STB45NF06L ■ ■ ■ VDSS RDS(on) ID 60 V 60 V < 0.028Ω < 0.028Ω 38 A 38 A TYPICAL RDS(on) = 0.022Ω EXCEPTIONAL dv/dt CAPABILITY LOGIC LEVEL GATE DRIVE 3 3 1 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. D2PAK 2 TO-220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH-EFFICIENCY DC-DC CONVERTERS ■ SOLENOID AND RELAY DRIVERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-DC & DC-AC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Drain-source Voltage (VGS = 0) 60 V Drain-gate Voltage (RGS = 20 kΩ) 60 V Gate- source Voltage ±16 V ID Drain Current (continuos) at TC = 25°C 38 A ID Drain Current (continuos) at TC = 100°C 26 A Drain Current (pulsed) 152 A Total Dissipation at TC = 25°C 80 W 0.53 W/°C 7 V/ns –55 to 175 °C VDS VDGR VGS IDM () PTOT Parameter Derating Factor dv/dt (1) Tstg Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (● ) Pulse width limited by safe operating area September 2002 (1) ISD ≤38A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. 1/10 STP45NF06L - STB45NF06L THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.87 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value Unit 38 A 135 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. 60 Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 V Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA Gate-body Leakage Current (VDS = 0) VGS = ±16V ±100 nA Max. Unit ON (1) Symbol VGS(th) RDS(on) Parameter Test Conditions Min. Typ. Gate Threshold Voltage VDS = VGS, ID = 250µA 1.7 2.5 V Static Drain-source On Resistance VGS = 5 V, ID = 19 A 0.024 0.03 Ω VGS = 10V, ID = 19 A 0.022 0.028 Typ. Max. 1 DYNAMIC Symbol gfs (1) 2/10 Parameter Forward Transconductance Test Conditions Unit 24 S 1600 pF Output Capacitance 217 pF Reverse Transfer Capacitance 62 pF Ciss Input Capacitance Coss Crss VDS =15V , ID=19 A Min. VDS = 25V, f = 1 MHz, VGS = 0 STP45NF06L - STB45NF06L ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions Min. VDD = 30V, ID = 19A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 48V, ID = 38A, VGS = 5V Typ. Max. Unit 30 ns 105 ns 23 7 10 31 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol Parameter td(off) tf Turn-off-Delay Time Fall Time td(off) Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 30V, ID = 19A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) 65 25 ns ns Vclamp =48V, ID =38A RG = 4.7Ω, VGS = 10V 50 ns (see test circuit, Figure 5) 55 ns 85 ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 38A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 38A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) IRRM Typ. Source-drain Current ISDM (2) trr Qrr Min. 70 110 4 Max. Unit 38 A 152 A 1.5 V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedence 3/10 STP45NF06L - STB45NF06L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/10 STP45NF06L - STB45NF06L Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/10 STP45NF06L - STB45NF06L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 STP45NF06L - STB45NF06L TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 7/10 STP45NF06L - STB45NF06L D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 8º 3 V2 0.4 8/10 1 STP45NF06L - STB45NF06L 2 D PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 MAX. MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. 12.992 0.059 13.2 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.075 0.082 0.933 0.956 * on sales type 9/10 STP45NF06L - STB45NF06L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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