STB16NS25 N-CHANNEL 250V - 0.23Ω - 16A D2PAK MESH OVERLAY™ MOSFET TYPE VDSS RDS(on) ID STB16NS25 250 V < 0.28 Ω 16 A ■ ■ ■ TYPICAL RDS(on) = 0.23 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications. D2PAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITH MODE POWER SUPPLIES (SMPS) ■ DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT ■ ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Value Unit Drain-source Voltage (VGS = 0) Parameter 250 V Drain-gate Voltage (RGS = 20 kΩ) 250 V Gate- source Voltage ± 20 V ID Drain Current (continuos) at TC = 25°C 16 A ID Drain Current (continuos) at TC = 100°C 11 A Drain Current (pulsed) 64 A Total Dissipation at TC = 25°C 140 W Derating Factor 1 W/°C Peak Diode Recovery voltage slope 5 V/ns –65 to 175 °C 175 °C IDM () PTOT dv/dt (1) Tstg Tj Storage Temperature Max. Operating Junction Temperature (•)Pulse width limited by safe operating area February 2003 (1) ISD≤ 16A, di/dt≤300 A/µs, VDD≤ V(BR)DSS, Tj≤TjMAX 1/9 STB16NS25 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.9 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 28 V) Max Value Unit 16 A 200 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating Gate-body Leakage Current (VDS = 0) VGS = ± 20 V Min. Typ. Max. 250 Unit V VDS = Max Rating, TC = 125 °C 1 µA 50 µA ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 8 A Min. Typ. Max. Unit 2 3 4 V 0.23 0.28 Ω Min. Typ. Max. Unit 14 15 S DYNAMIC Symbol gfs (1) 2/9 Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID = 8 A VDS = 25V, f = 1 MHz, VGS = 0 Ciss Input Capacitance 1270 pF Coss Output Capacitance 190 pF Crss Reverse Transfer Capacitance 75 pF STB16NS25 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 125 V, ID = 8 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) VDD = 200V, ID = 16 A, VGS = 10V Typ. Max. Unit 15 ns 25 ns 60 80 nC 8 nC 22 nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off- Delay Time Fall Time VDD = 125V, ID = 8 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) 75 35 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time Vclamp = 200V, ID = 16 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) 25 30 55 ns ns ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Max. Unit Source-drain Current 16 A ISDM (2) Source-drain Current (pulsed) 64 A VSD (1) Forward On Voltage ISD = 16 A, VGS = 0 1.5 V trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 16 A, di/dt = 100A/µs VDD = 33V, Tj = 150°C (see test circuit, Figure 5) IRRM Reverse Recovery Current 270 ns 1.5 µC 11.5 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/9 STB16NS25 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/9 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations STB16NS25 Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature 5/9 STB16NS25 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STB16NS25 D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 4º 3 V2 0.4 7/9 1 STB16NS25 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 MAX. D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 8/9 inch 0.933 0.956 MAX. MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. 12.992 0.059 13.2 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB16NS25 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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