STB8NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STB8NA50 V DSS R DS(on ) ID 500 V < 0.85 Ω 8 A TYPICAL RDS(on) = 0.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING D2PACK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX ”T4”) APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE 3 12 I2PAK TO-262 1 3 D2PAK TO-263 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR V GS Valu e Unit Drain-source Voltage (V GS = 0) Parameter 500 V Drain- gate Voltage (R GS = 20 kΩ) 500 V ± 30 V Gate-source Voltage o ID Drain Current (continuous) at T c = 25 C 8 A ID Drain Current (continuous) at T c = 100 o C 5.3 A Drain Current (pulsed) 32 A I DM (•) P tot o T otal Dissipation at T c = 25 C Derating Fact or T s tg Tj Storage Temperature Max. O perating Junction Temperature 125 W 1 W/ oC -65 to 150 o C 150 o C (•) Pulse width limited by safe operating area October 1995 1/10 STB8NA50 THERMAL DATA R thj -ca se R thj- amb R thc-sin k Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead T emperature For Soldering Purpose Max Max Typ o 1 62.5 0.5 300 C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symbo l Parameter Max Valu e Unit 8 A Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 50 V) 350 mJ E AR Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) 11 mJ I AR Avalanche Current, Repetitive or Not-Repetitive o (T c = 100 C, pulse width limited by T j max, δ < 1%) 5.3 A I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) E AS ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS Parameter Drain-source Breakdown Voltage T est Con ditio ns I D = 250 µA Min . V GS = 0 T yp. Max. 500 I DSS V DS = Max Rating Zero G ate Voltage Drain Current (V GS = 0) V DS = Max Rating x 0.8 I GSS Gate-body Leakage Current (V DS = 0) Unit V T c = 125 oC V GS = ± 30 V 250 1000 µA µA ± 100 nA Max. Unit ON (∗) Symbo l Parameter T est Con ditio ns V GS( th) Gate Threshold Voltage V DS = V GS ID = 250 µA R DS( on) Static Drain-source On Resistance V GS = 10V V GS = 10V ID = 4 A ID = 4 A On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V I D(on ) Min . 2.25 T yp. 3 3.75 V 0.7 0.85 1.7 Ω Ω o T c = 100 C 8 A DYNAMIC Symbo l g f s (∗) C is s C o ss C r ss 2/10 Parameter T est Con ditio ns Forward Transconductance V DS > I D(on) x R DS(on)max Input Capacitance Output Capacitance Reverse T ransfer Capacitance V DS = 25 V f = 1 MHz ID = 4 A VGS = 0 Min . T yp. 4.5 6.5 1200 190 55 Max. Unit S 1600 250 75 pF pF pF STB8NA50 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l t d(on) tr (di/dt) on Qg Q gs Q gd Parameter T est Con ditio ns Min . T yp. Max. Unit 25 35 ns ns Turn-on Time Rise Time V DD = 250 V I D = 4 A VGS = 10 V R G = 4.7 Ω (see test circuit, figure 3) 18 25 Turn-on Current Slope V DD = 400 V I D = 8 A V GS = 10 V R G = 47 Ω (see test circuit, figure 5) 220 Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 400 V 55 9 25 75 nC nC nC T yp. Max. Unit 15 15 25 22 22 35 ns ns ns T yp. Max. Unit 8 32 A A 1.6 V ID = 8 A V GS = 10 V A/µs SWITCHING OFF Symbo l t r( Voff ) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time T est Con ditio ns Min . V DD = 400 V I D = 8 A R G = 4.7 Ω V GS = 10 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbo l Parameter T est Con ditio ns I SD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 8 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 8 A di/dt = 100 A/µs o Tj = 150 C V DD = 100 V (see test circuit, figure 5) t rr Q rr I RRM Min . V GS = 0 500 ns 6.5 µC 26 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limi ted by safe operating area Safe Operating Area Thermal Impedance 3/10 STB8NA50 Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/10 STB8NA50 Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time 5/10 STB8NA50 Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuit 6/10 Fig. 2: Unclamped Inductive Waveform STB8NA50 Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And DIode Recovery Times 7/10 STB8NA50 TO-262 (I2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. 4.3 4.6 0.169 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B1 1.2 1.38 0.047 0.054 B2 1.25 1.4 0.049 0.055 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 9 9.35 0.354 0.368 e 2.44 2.64 0.096 0.104 E 10 10.28 0.393 0.404 L 13.2 13.5 0.519 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.37 0.050 0.054 E e B B2 C2 A1 A C A L1 L2 8/10 MAX. D L STB8NA50 TO-263 (D2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.3 4.6 0.169 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.25 1.4 0.049 0.055 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 9 9.35 0.354 0.368 E 10 10.28 0.393 0.404 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.624 L2 1.27 1.37 0.050 0.054 L3 1.4 1.75 0.055 0.068 E A C2 L2 D L L3 B2 B A1 C G 9/10 STB8NA50 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 10/10