STMICROELECTRONICS STB95NF03

STB95NF03
N-CHANNEL 30V - 0.0065 Ω - 95A D²PAK
STripFET™ II POWER MOSFET
■
■
■
■
TYPE
VDSS
RDS(on)
ID
STB95NF03
30 V
<0.007 Ω
80 A
TYPICAL RDS(on) = 0.0065 Ω
STANDARD THRESHOLD DRIVE
100% AVALANCHE TESTED
SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
3
1
D2PAK
TO-263
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ DC-DC & DC-AC CONVERTERS
■ SOLENOID AND RELAY DRIVERS
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
Parameter
Value
Unit
Drain-source Voltage (VGS = 0)
30
V
Drain-gate Voltage (RGS = 20 kΩ)
30
V
VGS
Gate- source Voltage
± 20
V
ID(∗)
Drain Current (continuous) at TC = 25°C
80
A
ID
Drain Current (continuous) at TC = 100°C
80
A
Drain Current (pulsed)
320
A
Total Dissipation at TC = 25°C
150
W
1
W/°C
Peak Diode Recovery voltage slope
3.0
V/ns
Single Pulse Avalanche Energy
720
mJ
-55 to 175
°C
IDM(•)
Ptot
Derating Factor
dv/dt
(1)
EAS (2)
Tstg
Tj
Storage Temperature
Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(*) Current Limited by Package
March 2003
(1) ISD ≤ 95A, di/dt ≤ 150A/µs, VDD ≤ V (BR)DSS, Tj ≤ TJMAX.
(2) Starting T j = 25 oC, ID = 47.5A, VDD = 25V
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STB95NF03
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
1
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
V(BR)DSS
VGS = 0
Min.
Typ.
Max.
30
Unit
V
1
10
µA
µA
±100
nA
Max.
Unit
4
V
0.0065
0.0070
Ω
Typ.
Max.
Unit
ON (*)
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V
ID = 250 µA
Min.
Typ.
2
ID = 45 A
DYNAMIC
Symbol
2/9
Parameter
Test Conditions
gfs (*)
Forward Transconductance
VDS = 15 V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V f = 1 MHz VGS = 0
ID =45 A
Min.
50
S
2450
880
170
pF
pF
pF
STB95NF03
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON (*)
Symbol
td(on)
tr
Qg
Qgs
Qgd
Parameter
Test Conditions
Turn-on Time
Rise Time
VDD = 15 V
RG = 4.7 Ω
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=15V ID=95A VGS=10V
Min.
ID = 47.5 A
VGS = 10 V
Typ.
Max.
20
195
Unit
ns
ns
59
18
21
70
nC
nC
nC
Typ.
Max.
Unit
SWITCHING OFF(*)
Symbol
td(off)
tf
Parameter
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 20 V
RG = 4.7Ω,
Min.
ID = 47.5 A
VGS = 10 V
35
35
ns
ns
SOURCE DRAIN DIODE(*)
Symbol
Parameter
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*)
Forward On Voltage
ISD = 95 A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
di/dt = 100A/µs
ISD = 95 A
Tj = 150°C
VDD = 20 V
(see test circuit, Figure 5)
trr
Qrr
IRRM
Test Conditions
Min.
Typ.
VGS = 0
60
120
4
Max.
Unit
95
320
A
A
1.3
V
ns
nC
A
(*) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•) Pulse width limited by Tjmax
Safe Operating Area
Thermal Impedance
3/9
STB95NF03
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/9
STB95NF03
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
.
.
5/9
STB95NF03
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
STB95NF03
D2PAK MECHANICAL DATA
DIM.
mm.
MIN.
TYP.
inch.
MAX.
MIN.
TYP.
TYP.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.028
0.037
B2
1.14
1.7
0.045
0.067
C
0.45
0.6
0.018
0.024
C2
1.21
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
10.4
0.394
D1
E
8
10
E1
G
0.315
8.5
0.409
0.334
4.88
5.28
0.192
0.208
L
15
15.85
0.591
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.069
M
2.4
3.2
0.094
0.126
8°
0°
R
V2
0.4
0°
0.015
8°
7/9
STB95NF03
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
DIM.
mm
MAX.
MIN.
MAX.
A0
10.5
10.7
0.413
0.421
B0
15.7
15.9
0.618
0.626
D
1.5
1.6
0.059
0.063
D1
1.59
1.61
0.062
0.063
E
1.65
1.85
0.065
0.073
F
11.4
11.6
0.449
0.456
K0
4.8
5.0
0.189
0.197
P0
3.9
4.1
0.153
0.161
P1
11.9
12.1
0.468
0.476
P2
1.9
2.1
0075
0.082
R
50
1.574
T
0.25
0.35
.0.0098
0.0137
W
23.7
24.3
0.933
0.956
* on sales type
8/9
inch
MIN.
MIN.
330
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
inch
MAX.
MAX.
12.992
0.059
13.2
0.504
0.520
0.795
26.4
0.960
1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STB95NF03
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 2003 STMicroelectronics - All Rights Reserved
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