STB55NF06 STB55NF06-1 STP55NF06 STP55NF06FP N-CHANNEL 60V - 0.015 Ω - 50A TO-220/TO-220FP/I²PAK/D²PAK STripFET™ II POWER MOSFET VDSS TYPE STP55NF06 STB55NF06-1 STB55NF06 STP55NF06FP ■ ■ ■ ■ ■ 60 V 60 V 60 V 60 V RDS(on) <0.018 <0.018 <0.018 <0.018 Ω Ω Ω Ω ID TO-220FP 50 A 50 A 50 A 50 A(*) TYPICAL RDS(on) = 0.015 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”) THROUGH-HOLE I²PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX “-1") DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 3 1 2 3 TO-220 1 2 3 I²PAK TO-262 (Suffix “-1”) 3 12 1 D²PAK TO-263 (Suffix “T4”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SWITCHING SPEED ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-DC & DC-AC CONVERTERS ■ AUTOMOTIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS VDGR VGS ID ID IDM(•) Ptot Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature dv/dt (1) EAS (2) Tstg Tj (•) Pulse width limited by safe operating area (*)Refer to soa for the max allowable current value on FP-type due to Rth value March 2003 . Value STP_B55NF06(-1) STP55NF06FP 60 60 ± 20 50 50(*) 35 35(*) 200 200(*) 110 30 0.73 0.2 7 350 -55 to 175 Unit V V V A A A W W/°C V/ns mJ °C (1) ISD ≤50A, di/dt ≤400A/µs, VDD ≤ V (BR)DSS, T j ≤ T JMAX (2) Starting Tj = 25 oC, I D = 25A, VDD= 30V 1/12 STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Tl Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose (1.6 mm from case, for 10 sec) Max I²PAK D²PAK TO-220 TO-220FP 1.36 5 °C/W 62.5 300 °C/W °C ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V V(BR)DSS Min. Typ. Max. 60 Unit V 1 10 µA µA ±100 nA ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS RDS(on) Static Drain-source On Resistance VGS = 10 V ID = 250 µA Min. Typ. Max. Unit 2 3 4 V 0.015 0.018 Ω Typ. Max. Unit ID = 27.5 A DYNAMIC Symbol 2/12 Parameter Test Conditions gfs (*) Forward Transconductance VDS = 15 V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 ID = 27.5 A Min. 18 S 1530 300 105 pF pF pF STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time ID = 27.5 A VDD = 30 V RG = 4.7 Ω VGS = 10 V (Resistive Load, Figure 3) 16 8 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 48 V ID= 55 A VGS= 10V 44.5 10.5 17.5 60 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. ID = 27.5 A VDD = 30V RG = 4.7Ω, VGS = 10 V (Resistive Load, Figure 3) 36 15 ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 55A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100A/µs ISD = 55 A VDD = 30 V Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. VGS = 0 75 170 4.5 Max. Unit 50 200 A A 1.5 V ns nC A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area for Safe Operating Area for TO-220FP 3/12 STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP Thermal Impedance Thermal Impedance for TO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/12 STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage Temperature 5/12 STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/12 STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP D2PAK MECHANICAL DATA DIM. mm. MIN. TYP. inch. MAX. MIN. TYP. TYP. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.028 0.037 B2 1.14 1.7 0.045 0.067 C 0.45 0.6 0.018 0.024 C2 1.21 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 10.4 0.394 D1 E 8 10 E1 G 0.315 8.5 0.409 0.334 4.88 5.28 0.192 0.208 L 15 15.85 0.591 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.069 M 2.4 3.2 0.094 0.126 8° 0° R V2 0.4 0° 0.015 8° 7/12 STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP TO-220 MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 4.40 TYP. 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 TYP. 1.27 MAX. 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 0.409 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 8/12 L4 P011C STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP TO-262 (I2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 E 10 10.4 0.393 0.409 L 13.1 13.6 0.515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055 E e B B2 C2 A1 A C A L1 L2 D L P011P5/E 9/12 STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP TO-220FP MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 1 2 3 L2 10/12 L4 STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A inch MAX. MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T MAX. 12.992 0.059 13.2 0.504 0.520 0.795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0075 0.082 R 50 1.574 T 0.25 0.35 .0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 11/12 STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 12/12