STMICROELECTRONICS STGW20NC60VD

STGW20NC60VD
N-CHANNEL 30A - 600V TO-247
Very Fast PowerMESH™ IGBT
Figure 1: Package
Table 1: General Features
TYPE
VCES
VCE(sat) (Max)
@25°C
IC
@100°C
STGW20NC60VD
600 V
< 2.5 V
30 A
■
■
■
■
■
■
■
OFF LOSSES INCLUDE TAIL CURRENT
LOSSES INCLUDE DIODE RECOVERY
ENERGY
HIGH CURRENT CAPABILITY
HIGH FREQUENCY OPERATION UP TO 50
KHz
VERY SOFT ULTRA FAST RECOVERY
ANTIPARALLEL DIODE
LOWER CRES /CIES RATIO
NEW GENERATION PRODUCTS WITH
TIGHTER PARAMETER DISTRIBUTION
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.
The suffix “V” identifies a family optimized for high
frequency applications.
3
2
1
TO-247
Weight: 4.41gr ± 0.01
Max Clip Pressure: 150 N/mm2
Figure 2: Internal Schematic Diagram
APPLICATIONS
HIGH FREQUENCY INVERTERS
■ SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
■ UPS
■ MOTOR DRIVERS
■
Table 2: Order Codes
SALES TYPE
MARKING
PACKAGE
PACKAGING
STGW20NC60VD
GW20NC60VD
TO-247
TUBE
Rev. 4
July 2004
1/11
STGW20NC60VD
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
Symbol
VCES
Collector-Emitter Voltage (VGS = 0)
600
V
VECR
Reverse Battery Protection
20
V
VGE
Gate-Emitter Voltage
± 20
V
IC
Collector Current (continuous) at 25°C (#)
60
A
IC
Collector Current (continuous) at 100°C (#)
30
A
Collector Current (pulsed)
100
A
ICM (1)
If
PTOT
Tstg
Tj
Diode RMS Forward Current at TC = 25°C
30
A
Total Dissipation at TC = 25°C
200
W
Derating Factor
1.6
W/°C
– 55 to 150
°C
Storage Temperature
Operating Junction Temperature
(1)Pulse width limited by max. junction temperature.
Table 4: Thermal Data
Min.
Typ.
Max.
Rthj-case
Thermal Resistance Junction-case (IGBT)
--
--
0.625
°C/W
Rthj-case
Thermal Resistance Junction-case (Diode)
--
--
1.5
°C/W
Rthj-amb
Thermal Resistance Junction-ambient
--
--
50
°C/W
TL
Maximum Lead Temperature for Soldering
Purpose (1.6 mm from case, for 10 sec.)
300
°C
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: Off
Symbol
Parameter
VBR(CES)
Collectro-Emitter Breakdown
Voltage
IC = 1 mA, VGE = 0
Collector-Emitter Leakage
Current (VCE = 0)
VGE = Max Rating
Tc=25°C
Tc=125°C
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 20 V , VCE = 0
ICES
IGES
Test Conditions
Min.
Typ.
Max.
600
Unit
V
10
1
µA
mA
± 100
nA
Max.
Unit
5.75
V
2.5
V
V
Table 6: On
Symbol
VGE(th)
VCE(SAT)
Parameter
Gate Threshold Voltage
VCE= VGE, IC= 250 µA
Collector-Emitter Saturation
Voltage
VGE= 15 V, IC= 20A, Tj= 25°C
VGE= 15 V, IC= 20A,
Tj= 125°C
(#) Calculated according to the iterative formula:
T
–T
JMAX
C
I ( T ) = -------------------------------------------------------------------------------------------------C C
R
×V
(T , I )
THJ – C
CESAT ( M AX ) C C
2/11
Test Conditions
Min.
Typ.
3.75
1.8
1.7
STGW20NC60VD
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol
Parameter
Test Conditions
gfs(1)
Forward Transconductance
VCE = 15 V, IC= 20 A
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VCE = 25V, f = 1 MHz, VGE = 0
Qg
Qge
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 390 V, IC = 20 A,
VGE = 15V,
(see Figure 21)
ICL
Turn-Off SOA Minimum
Current
Vclamp = 480 V , Tj = 150°C
RG = 10 Ω, VGE= 15V
Min.
Typ.
Max.
Unit
15
S
2200
225
50
pF
pF
pF
100
16
45
140
100
nC
nC
nC
A
Table 8: Switching On
Symbol
Parameter
Test Conditions
td(on)
tr
(di/dt)on
Eon (2)
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
Turn-on Switching Losses
VCC = 390 V, IC = 20 A
RG= 3.3Ω, VGE= 15V, Tj= 25°C
(see Figure 19)
td(on)
tr
(di/dt)on
Eon (2)
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
Turn-on Switching Losses
VCC = 390 V, IC = 20 A
RG= 3.3Ω, VGE= 15V, Tj=
125°C
(see Figure 19)
Min.
Typ.
31
11
1600
220
Max.
Unit
300
ns
ns
A/µs
µJ
31
11.5
1500
450
ns
ns
A/µs
µJ
2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode,
the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)
Table 9: Switching Off
Symbol
Parameter
tr(Voff)
Off Voltage Rise Time
td(off)
Turn-off Delay Time
tf
Eoff (3)
Ets
tr(Voff)
td(off)
tf
Eoff (3)
Ets
Current Fall Time
Test Conditions
Vcc = 390 V, IC = 20 A,
RGE = 3.3 Ω , VGE = 15 V
TJ = 25 °C
(see Figure 19)
Min.
Typ.
Max.
Unit
28
ns
100
ns
75
ns
Turn-off Switching Loss
330
450
µJ
Total Switching Loss
550
750
µJ
Off Voltage Rise Time
Turn-off Delay Time
Vcc = 390 V, IC = 20 A,
RGE = 3.3 Ω , VGE = 15 V
Tj = 125 °C
(see Figure 19)
66
ns
150
ns
130
ns
Turn-off Switching Loss
770
µJ
Total Switching Loss
1220
µJ
Current Fall Time
(3)Turn-off losses include also the tail of the collector current.
3/11
STGW20NC60VD
Table 10: Collector-Emitter Diode
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
1.3
1
2.0
V
V
Forward On-Voltage
If = 10 A
If = 10 A, Tj = 125 °C
trr
ta
Qrr
Irrm
S
Reverse Recovery Time
If = 20 A ,VR = 40 V,
Tj = 25°C, di/dt = 100 A/µs
(see Figure 22)
44
32
66
3
0.375
ns
ns
nC
A
trr
ta
Qrr
Irrm
S
Reverse Recovery Time
If = 20 A ,VR = 40 V,
Tj =125°C, di/dt = 100 A/µs
(see Figure 22)
88
56
237
5.4
0.57
ns
ns
nC
A
Vf
4/11
Parameter
Reverse Recovery Charge
Reverse Recovery Current
Softness factor of the diode
Reverse Recovery Charge
Reverse Recovery Current
Softness factor of the diode
STGW20NC60VD
Figure 3: Output Characteristics
Figure 6: Transfer Characteristics
Figure 4: Transconductance
Figure 7: Collector-Emitter On Voltage vs Temperature
Figure 5: Collector-Emitter On Voltage vs Collector Current
Figure 8: Normalized Gate Threshold vs Temperature
5/11
STGW20NC60VD
Figure 9: Normalized Breakdown Voltage vs
Temperature
Figure 12: Gate Charge vs Gate-Emitter Voltage
Figure 10: Capacitance Variations
Figure 13: Total Switching Losses vs Temperature
Figure 11: Total Switching Losses vs Gate Resistance
Figure 14: Total Switching Losses vs Collector
Current
6/11
STGW20NC60VD
Figure 15: Thermal Impedance
Figure 18: Ic vs Frequency
Figure 16: Turn-Off SOA
Figure 17: Emitter-Collector Diode Characteristics
For a fast IGBT suitable for high frequency applications, the typical collector current vs. maximum
operating frequency curve is reported. That frequency is defined as follows:
fMAX = (PD - PC) / (EON + EOFF)
1) The maximum power dissipation is limited by
maximum junction to case thermal resistance:
PD = ∆T / RTHJ-C
considering ∆T = TJ - TC = 125 °C- 75 °C = 50°C
2) The conduction losses are:
PC = IC * VCE(SAT) * δ
with 50% of duty cycle, VCESAT typical value
@125°C.
3) Power dissipation during ON & OFF commutations is due to the switching frequency:
PSW = (EON + EOFF) * freq.
4) Typical values @ 125°C for switching losses are
used (test conditions: VCE = 390V, VGE = 15V,
RG = 3.3 Ohm). Furthermore, diode recovery energy is included in the EON (see note 2), while the
tail of the collector current is included in the EOFF
measurements (see note 3).
7/11
STGW20NC60VD
Figure 19: Test Circuit for Inductive Load
Switching
Figure 21: Gate Charge Test Circuit
Figure 20: Switching Waveforms
Figure 22: Diode Recovery Times Waveform
8/11
STGW20NC60VD
Table 11: Revision History
Date
Revision
12-July-2004
4
Description of Changes
Stylesheet update.
Added Max Values see Table 8 and 9
Added Figure 22
9/11
STGW20NC60VD
TO-247 MECHANICAL DATA
DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
0.134
b2
3.0
3.40
0.118
c
0.40
0.80
0.015
0.03
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
e
5.45
0.620
0.214
L
14.20
14.80
0.560
L1
3.70
4.30
0.14
L2
18.50
0.582
0.17
0.728
øP
3.55
3.65
0.140
0.143
øR
4.50
5.50
0.177
0.216
S
10/11
TYP
5.50
0.216
STGW20NC60VD
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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
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© 2004 STMicroelectronics - All Rights Reserved
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