STGP20NC60V STGW20NC60V N-CHANNEL 30A - 600V - TO-220/TO-247 Very Fast PowerMESH™ IGBT Figure 1: Package Table 1: General Features TYPE STGP20NC60V STGW20NC60V ■ ■ ■ ■ ■ ■ VCES VCE(sat) (Max) @25°C IC @100°C 600 V 600 V < 2.5 V < 2.5 V 30 A 30 A OFF LOSSES INCLUDE TAIL CURRENT LOSSES INCLUDE DIODE RECOVERY ENERGY HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz LOWER CRES / CIES RATIO NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRUBUTION DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “V” identifies a family optimized for high frequency. 3 1 2 3 2 TO-220 1 TO-247 Weight for TO-220: 1.92gr ± 0.01 Weight for TO-247: 4.41gr ± 0.01 Max Clip Pressure: 150 N/mm2 Figure 2: Internal Schematic Diagram APPLICATIONS HIGH FREQUENCY INVERTERS ■ SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES ■ UPS ■ MOTOR DRIVERS ■ Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STGP20NC60V GP20NC60V TO-220 TUBE STGW20NC60V GW20NC60V TO-247 TUBE Rev. 4 July 2004 1/11 STGP20NC60V - STGW20NC60V Table 3: Absolute Maximum ratings Symbol Parameter Value Symbol VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Reverse Battery Protection 20 V VGE Gate-Emitter Voltage ± 20 V IC Collector Current (continuous) at 25°C (#) 60 A IC Collector Current (continuous) at 100°C (#) 30 A Collector Current (pulsed) 100 A Total Dissipation at TC = 25°C 200 W Derating Factor 1.6 W/°C – 55 to 150 °C ICM (1) PTOT Tstg Tj Storage Temperature Operating Junction Temperature (1)Pulse width limited by max. junction temperature. Table 4: Thermal Data Min. Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Typ. Max. TO-220 TO-247 TL 0.625 °C/W 62.5 °C/W 50 Maximum Lead Temperature for Soldering Purpose (1.6 mm from case, for 10 sec.) 300 °C ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: Off Symbol Parameter VBR(CES) Collectro-Emitter Breakdown Voltage IC = 1 mA, VGE = 0 Collector-Emitter Leakage Current (VCE = 0) VGE = Max Rating Tc=25°C Tc=125°C Gate-Emitter Leakage Current (VCE = 0) VGE = ± 20 V , VCE = 0 ICES IGES Test Conditions Min. Typ. Max. 600 Unit V 10 1 µA mA ± 100 nA Max. Unit 5.75 V 2.5 V V Table 6: On Symbol VGE(th) VCE(SAT) Parameter Gate Threshold Voltage VCE= VGE, IC= 250 µA Collector-Emitter Saturation Voltage VGE= 15 V, IC= 20A, Tj= 25°C VGE= 15 V, IC= 20A, Tj= 125°C (#) Calculated according to the iterative formula: T –T JMAX C I ( T ) = -------------------------------------------------------------------------------------------------C C R ×V (T , I ) THJ – C CESAT ( M AX ) C C 2/11 Test Conditions Min. Typ. 3.75 1.8 1.7 STGP20NC60V - STGW20NC60V ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Symbol Parameter Test Conditions gfs(1) Forward Transconductance VCE = 15 V, IC= 20 A Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 25V, f = 1 MHz, VGE = 0 Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 390 V, IC = 20 A, VGE = 15V, (see Figure 20) ICL Turn-Off SOA Minimum Current Vclamp = 480 V , Tj = 150°C RG = 10 Ω, VGE= 15V Min. Typ. Max. Unit 15 S 2200 225 50 pF pF pF 100 16 45 140 100 nC nC nC A Table 8: Switching On Symbol Parameter Test Conditions td(on) tr (di/dt)on Eon (2) Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Switching Losses VCC = 390 V, IC = 20 A RG= 3.3Ω, VGE= 15V, Tj= 25°C (see Figure 18) td(on) tr (di/dt)on Eon (2) Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Switching Losses VCC = 390 V, IC = 20 A RG= 3.3Ω, VGE= 15V, Tj= 125°C (see Figure 18) Min. Typ. 31 11 1600 220 Max. Unit 300 ns ns A/µs µJ 31 11.5 1500 450 ns ns A/µs µJ 2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C) Table 9: Switching Off Symbol Parameter tr(Voff) Off Voltage Rise Time td(off) Turn-off Delay Time tf Eoff (3) Ets tr(Voff) td(off) tf Eoff (3) Ets Current Fall Time Test Conditions Vcc = 390 V, IC = 20 A, RGE = 3.3 Ω , VGE = 15 V TJ = 25 °C (see Figure 18) Min. Typ. Max. Unit 28 ns 100 ns 75 ns Turn-off Switching Loss 330 450 µJ Total Switching Loss 550 750 µJ Off Voltage Rise Time Turn-off Delay Time Vcc = 390 V, IC = 20 A, RGE = 3.3 Ω , VGE = 15 V Tj = 125 °C (see Figure 18) 66 ns 150 ns 130 ns Turn-off Switching Loss 770 µJ Total Switching Loss 1220 µJ Current Fall Time (3)Turn-off losses include also the tail of the collector current. 3/11 STGP20NC60V - STGW20NC60V Figure 3: Output Characteristics Figure 6: Transfer Characteristics Figure 4: Transconductance Figure 7: Collector-Emitter On Voltage vs Temperature Figure 5: Collector-Emitter On Voltage vs Collector Current Figure 8: Normalized Gate Threshold vs Temperature 4/11 STGP20NC60V - STGW20NC60V Figure 9: Normalized Breakdown Voltage vs Temperature Figure 12: Gate Charge vs Gate-Emitter Voltage Figure 10: Capacitance Variations Figure 13: Total Switching Losses vs Temperature Figure 11: Total Switching Losses vs Gate Resistance Figure 14: Total Switching Losses vs Collector Current 5/11 STGP20NC60V - STGW20NC60V Figure 15: Thermal Impedance Figure 17: Ic vs Frequency Figure 16: Turn-Off SOA For a fast IGBT suitable for high frequency applications, the typical collector current vs. maximum operating frequency curve is reported. That frequency is defined as follows: fMAX = (PD - PC) / (EON + EOFF) 1) The maximum power dissipation is limited by maximum junction to case thermal resistance: PD = ∆T / RTHJ-C considering ∆T = TJ - TC = 125 °C- 75 °C = 50°C 2) The conduction losses are: PC = IC * VCE(SAT) * δ with 50% of duty cycle, VCESAT typical value @125°C. 3) Power dissipation during ON & OFF commutations is due to the switching frequency: PSW = (EON + EOFF) * freq. 4) Typical values @ 125°C for switching losses are used (test conditions: VCE = 390V, VGE = 15V, RG = 3.3 Ohm). Furthermore, diode recovery energy is included in the EON (see note 2), while the tail of the collector current is included in the EOFF measurements (see note 3). 6/11 STGP20NC60V - STGW20NC60V Figure 18: Test Circuit for Inductive Load Switching Figure 20: Gate Charge Test Circuit Figure 19: Switching Waveforms 7/11 STGP20NC60V - STGW20NC60V TO-220 MECHANICAL DATA DIM. 8/11 mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 L30 28.90 0.645 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STGP20NC60V - STGW20NC60V TO-247 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 0.620 0.214 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 5.50 0.216 9/11 STGP20NC60V - STGW20NC60V Table 10: Revision History Date Revision 07-June-2004 4 10/11 Description of Changes Stylesheet update. No content change STGP20NC60V - STGW20NC60V Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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