STN3PF06 P-CHANNEL 60V - 0.18Ω - 3A SOT-223 STripFET™ II POWER MOSFET PRELIMINARY DATA TYPE STN3PF06 ■ ■ ■ ■ ■ VDSS RDS(on) ID 60V <0.20Ω 2.5A 2 TYPICAL RDS(on) = 0.18Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE 1 2 3 SOT-223 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS DC-DC & DC-AC CONVERTERS ■ DC MOTOR CONTROL (DISK DRIVES, etc.) ■ ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Value Unit Drain-source Voltage (VGS = 0) Parameter 60 V Drain-gate Voltage (RGS = 20 kΩ) 60 V Gate- source Voltage ±20 V ID Drain Current (continuos) at TC = 25°C 2.5 A ID Drain Current (continuos) at TC = 100°C 1.5 A Drain Current (pulsed) 10 A Total Dissipation at TC = 25°C 2.5 W Derating Factor 0.02 W/°C 6 V/ns –65 to 175 °C 150 °C IDM (●) PTOT dv/dt(1) Tstg Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (●) Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual poloarity of Voltages and current has to be reversed January 2001 (1)ISD ≤3A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. 1/6 STN3PF06 THERMAL DATA Rthj-pcb Thermal Resistance Junction-PC Board Max 50 °C/W Rthj-amb Thermal Resistance Junction-ambient Max (Surface Mounted) 60 °C/W Maximum Lead Temperature For Soldering Purpose 260 °C Tl ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) VGS = ±20V V(BR)DSS Min. Typ. Max. 60 Unit V VDS = Max Rating, TC = 125 °C 1 µA 10 µA ±100 nA Max. Unit 4 V 0.20 Ω ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 1.25 A ID(on) On State Drain Current VDS > ID(on) x RDS(on)max, VGS = 10V Min. Typ. 2 0.18 2.5 A DYNAMIC Symbol gfs (1) 2/6 Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID =1.25 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. Max. Unit 1.5 S 850 pF Ciss Input Capacitance Coss Output Capacitance 230 pF Crss Reverse Transfer Capacitance 75 pF STN3PF06 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Test Conditions Min. VDD = 30V, ID = 6A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 48V, ID = 12A, VGS = 10 V Typ. Max. Unit 20 ns 40 ns Qg Total Gate Charge Qgs Gate-Source Charge 4 nC Qgd Gate-Drain Charge 6 nC 16 21 nC SWITCHING OFF Symbol Parameter td(off) tf Turn-off-Delay Time Fall Time tr(off) Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 30V, ID = 6A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) Typ. Max. Unit 40 10 ns ns Vclamp =48V, ID =12 A RG = 4.7Ω, VGS = 10V 10 ns (see test circuit, Figure 5) 17 ns 30 ns SOURCE DRAIN DIODE Symbol Max. Unit Source-drain Current 2.5 A ISDM (1) Source-drain Current (pulsed) 10 A VSD (2) Forward On Voltage ISD = 2.5A, VGS = 0 1.2 V Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 12A, di/dt = 100A/µs, VDD = 30V, Tj = 150°C (see test circuit, Figure 5) ISD trr Qrr IRRM Parameter Test Conditions Min. Typ. 100 260 5.2 ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/6 STN3PF06 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 STN3PF06 SOT-223 MECHANICAL DATA mm DIM. MIN. TYP. A inch MAX. MIN. TYP. 1.80 MAX. 0.071 B 0.60 0.70 0.80 0.024 0.027 0.031 B1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 D 6.30 6.50 6.70 0.248 0.256 0.264 e 2.30 0.090 e1 4.60 0.181 E 3.30 3.50 3.70 0.130 0.138 0.146 H 6.70 7.00 7.30 0.264 0.276 0.287 10o V A1 10o 0.02 P008B 5/6 STN3PF06 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. 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