STP9NK60ZD - STF9NK60ZD STB9NK60ZD N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP/D2PAK SuperFREDMesh™ MOSFET ADVANCED DATA TYPE STP9NK60ZD STF9NK60ZD STB9NK60ZD ■ ■ ■ ■ ■ ■ VDSS RDS(on) ID Pw 600 V 600 V 600 V < 0.95 Ω < 0.95 Ω < 0.95 Ω 7A 7A 7A 125 W 30 W 125 W TYPICAL RDS(on) = 0.85 Ω VERY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED LOW INTRINSIC CAPACITANCES FAST INTERNAL RECOVERY DIODE 3 1 TO-220 2 TO-220FP 3 1 D2PAK DESCRIPTION The SuperFREDMesh™ series associates all advantages of reduced on-resistance, zener gate protection and very high dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” Advanced Technology. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HID BALLAST ■ ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP9NK60ZD P9NK60ZD TO-220 TUBE STF9NK60ZD F9NK60ZD TO-220FP TUBE STB9NK60ZDT4 January 2004 B9NK60ZD 2 D PAK TAPE & REEL 1/12 STP9NK60ZD - STF9NK60ZD - STB9NK60ZD ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value TO-220 / D2PAK VDS VDGR VGS Unit TO-220FP Drain-source Voltage (VGS = 0) 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ± 30 V ID Drain Current (continuos) at TC = 25°C 7 7 (*) A ID Drain Current (continuos) at TC = 100°C 4.3 4.3 (*) A Drain Current (pulsed) 28 28 (*) A Total Dissipation at TC = 25°C 125 30 W 0.24 W/°C IDM () PTOT Derating Factor VESD(G-S) dv/dt (1) 1 4000 Gate source ESD (HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope VISO Insulation Withstand Voltage (DC) Tj Tstg Operating Junction Temperature Storage Temperature V 15 V/ns - 2500 -55 to 150 V °C ( ) Pulse width limited by safe operating area (1) ISD ≤7A, di/dt ≤500A/µs, VDD ≤ V(BR)DSS, Tj = 25°C (*) Limited only by maximum temperature allowed THERMAL DATA TO-220 D2PAK Rthj-pcb Thermal Resistance Junction-pcb Max TO-220FP 30 Unit °C/W (When mounted on minimum Footprint) Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 1 62.5 4.16 °C/W °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 7 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 235 mJ GATE-SOURCE ZENER DIODE Symbol Parameter Test Conditions Min. BVGSO Gate-Source Breakdown Voltage Igs=± 1mA (Open Drain) 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/12 STP9NK60ZD - STF9NK60ZD - STB9NK60ZD ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter Test Conditions Min. Typ. Max. Drain-source Breakdown Voltage ID = 1mA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 100µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 3.5 A V(BR)DSS 600 Unit 2.5 V 3.5 4.5 V 0.85 0.95 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) Parameter Forward Transconductance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Coss eq. (3) Equivalent Output Capacitance Test Conditions Min. VDS = 15 V, ID = 3.5 A VDS = 25V, f = 1 MHz, VGS = 0 VGS = 0V, VDS = 0V to 480V 5.3 S 1110 135 30 pF pF pF 72 pF SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 300 V, ID = 3.5 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 22 17 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480V, ID = 7 A, VGS = 10V 41 8.7 21 53 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol Parameter Test Conditions Min. td(off) tf Turn-off Delay Time Fall Time VDD = 300 V, ID = 3.5 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 42 15 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 480V, ID = 7 A, RG = 4.7Ω, VGS = 10V (Inductive Load see, Figure 5) 11 8 20 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit 7 28 A A 1.6 V ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 7 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 7 A, di/dt = 100A/µs VDD = 30V, Tj = 25°C (see test circuit, Figure 5) 150 663 8.5 ns nC A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 7 A, di/dt = 100A/µs VDD = 30V, Tj = 150°C (see test circuit, Figure 5) 194 935 9.6 ns nC A trr Qrr IRRM trr Qrr IRRM Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/12 STP9NK60ZD - STF9NK60ZD - STB9NK60ZD Safe Operating Area For TO-220/D²PAK Safe Operating Area For TO-220FP Thermal Impedance For TO-220/D²PAK Thermal Impedance For TO-220FP Output Characteristics Transfer Characteristics 4/12 STP9NK60ZD - STF9NK60ZD - STB9NK60ZD Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/12 STP9NK60ZD - STF9NK60ZD - STB9NK60ZD Source-drain Diode Forward Characteristics Maximum Avalanche Energy vs Temperature 6/12 Normalized BVDSS vs Temperature STP9NK60ZD - STF9NK60ZD - STB9NK60ZD Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/12 STP9NK60ZD - STF9NK60ZD - STB9NK60ZD TO-220 MECHANICAL DATA DIM. 8/12 mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 L30 28.90 0.645 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STP9NK60ZD - STF9NK60ZD - STB9NK60ZD TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. MAX. 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.5 0.045 0.067 F2 1.15 1.5 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L5 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 2 3 L4 9/12 STP9NK60ZD - STF9NK60ZD - STB9NK60ZD D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 8º 3 V2 0.4 10/12 1 STP9NK60ZD - STF9NK60ZD - STB9NK60ZD D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm MIN. inch MAX. MIN. 1.5 C 12.8 D 20.2 G 24.4 N 100 MAX. 12.992 0.059 13.2 0.504 0.520 0795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type MIN. 330 T TAPE MECHANICAL DATA inch MAX. 0.933 0.956 11/12 STP9NK60ZD - STF9NK60ZD - STB9NK60ZD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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