ETC STF6NK60Z

STP6NK50Z - STF6NK60Z
STD6NK50Z
N-CHANNEL 500V - 0.98Ω - 5.6A TO-220 / TO-220FP / DPAK
Zener-Protected SuperMESH™Power MOSFET
TARGET DATA
TYPE
STP6NK50Z
STF6NK50Z
STD6NK50Z
■
■
■
■
■
■
VDSS
RDS(on)
ID
Pw
500 V
500 V
500 V
< 1.2 Ω
< 1.2 Ω
< 1.2 Ω
5.6 A
5.6 A
5.6 A
90 W
25 W
90 W
TYPICAL RDS(on) = 0.98 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
3
1
TO-220
2
TO-220FP
3
1
DPAK
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the
most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
■ LIGHTING
■
ORDERING INFORMATION
SALES TYPE
MARKING
PACKAGE
PACKAGING
STP6NK50Z
P6NK50Z
TO-220
TUBE
STF6NK50Z
F6NK50Z
TO-220FP
TUBE
STD6NK50ZT4
D6NK50
DPAK
TAPE & REEL
October 2003
1/9
STP6NK50Z - STF6NK50Z - STD6NK50Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP6NK50Z
STD6NK50Z
VDS
VDGR
VGS
Drain-source Voltage (VGS = 0)
500
V
Drain-gate Voltage (RGS = 20 kΩ)
500
V
Gate- source Voltage
± 30
V
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
90
IDM ()
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S)
dv/dt (1)
STF6NK50Z
5.6
5.6 (*)
A
3.5
3.5 (*)
A
22.4
22.4 (*)
A
25
W
0.2
W/°C
0.72
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tj
Tstg
Operating Junction Temperature
Storage Temperature
3000
V
4.5
V/ns
-
2500
-55 to 150
-55 to 150
V
°C
°C
( ) Pulse width limited by safe operating area
(1) ISD ≤6A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
TO-220
DPAK
TO-220FP
Rthj-case
Thermal Resistance Junction-case Max
1.39
5
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
100
°C/W
Tl
300
Maximum Lead Temperature For Soldering Purpose
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
Unit
6
A
220
mJ
GATE-SOURCE ZENER DIODE
Symbol
BVGSO
Parameter
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
(#) When mounted on minimum Footprint
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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STP6NK50Z - STF6NK50Z - STD6NK50Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Drain-source
Breakdown Voltage
ID = 1 mA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30V
±10
µA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 50µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 3 A
V(BR)DSS
500
Unit
3
V
3.75
4.5
V
0.98
1.2
Ω
Typ.
Max.
Unit
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Coss eq. (3)
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Test Conditions
Min.
VDS = 8 V, ID = 3 A
VDS = 25V, f = 1 MHz, VGS = 0
VGS = 0V, VDS = 0V to 480V
TBD
S
690
90
20
pF
pF
pF
TBD
pF
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 300 V, ID = 3 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
TBD
TBD
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 400V, ID = 5.6 A,
VGS = 10V
30
TBD
TBD
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 300 V, ID = 3 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
TBD
TBD
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 480V, ID = 5.6 A,
RG = 4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
TBD
TBD
TBD
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1)
Forward On Voltage
ISD = 5.6 A, VGS = 0
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 5.6 A, di/dt = 100A/µs
VDD = 30V, Tj = 150°C
(see test circuit, Figure 5)
trr
Qrr
IRRM
Min.
Typ.
TBD
TBD
TBD
Max.
Unit
5.6
22.4
A
A
1.6
V
ns
µC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
3/9
STP6NK50Z - STF6NK50Z - STD6NK50Z
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
4/9
STP6NK50Z - STF6NK50Z - STD6NK50Z
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
0.107
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
C
D
A
E
L4
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
L4
P011C
5/9
STP6NK50Z - STF6NK50Z - STD6NK50Z
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
A
4.4
inch
TYP
MAX.
MIN.
TYP.
MAX.
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.5
0.045
0.067
F2
1.15
1.5
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F2
H
G
G1
¯
F
F1
L7
L2
6/9
L5
1 2 3
L4
STP6NK50Z - STF6NK50Z - STD6NK50Z
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
L2
L4
V2
0.8
0.60
0
o
0.031
1.00
8
o
0.024
0
o
0.039
0o
P032P_B
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STP6NK50Z - STF6NK50Z - STD6NK50Z
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions
are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
DIM.
mm
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
12.1
0.476
B1
1.6
MIN.
MAX.
D
1.5
D1
1.5
E
1.65
1.85
0.065 0.073
F
7.4
7.6
0.291 0.299
0.059 0.063
0.059
K0
2.55
2.75
0.100 0.108
P0
3.9
4.1
0.153 0.161
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
16.3
1.574
0.618
R
40
W
15.7
* on sales type
8/9
inch
0.641
MAX.
MIN.
330
B
1.5
C
12.8
D
20.2
G
16.4
N
50
T
TAPE MECHANICAL DATA
inch
MAX.
12.992
0.059
13.2
0.504 0.520
0.795
18.4
0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
STP6NK50Z - STF6NK50Z - STD6NK50Z
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
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