STS6DNF30V DUAL N-CHANNEL 30V - 0.026Ω - 6A SO-8 2.5V-DRIVE STripFET™ II POWER MOSFET ■ ■ ■ ■ TYPE VDSS RDS(on) ID STS6DNF30V 30 V <0.030Ω (@4.5V) <0.038Ω (@2.5V) 6A TYPICAL RDS(on) = 0.026Ω (@4.5V) TYPICAL RDS(on) = 0.030Ω (@2.5V) ULTRA LOW THRESHOLD GATE DRIVE (2.5V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY SO-8 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size ™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ BATTERY SAFETY UNIT IN NOMADIC EQUIPMENT ■ DC-DC CONVERTERS ■ POWER MANAGEMENT IN PORTABLE/ DESKTOP PCS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID Value Unit Drain-source Voltage (VGS = 0) Parameter 30 V Drain-gate Voltage (RGS = 20 kΩ) 30 V Gate- source Voltage ±12 V 6 A 3.8 A Drain Current (continuos) at TC = 25°C Single Operation Drain Current (continuos) at TC = 100°C Single Operation IDM (l) Drain Current (pulsed) 24 A PTOT Total Dissipation at TC = 25°C Dual Operation Total Dissipation at TC = 25°C Single Operation 2 1.6 W W (●) Pulse width limited by safe operating area July 2002 1/8 STS6DNF30V THERMAL DATA Rthj-amb Tj Tstg Thermal Resistance Junction-ambient Max Single Operation Thermal Resistance Junction-ambient Max Dual Operation 78 62.5 Max. Operating Junction Temperature Storage Temperature °C/W °C/W 150 °C –65 to 150 °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. 30 Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 V Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA Gate-body Leakage Current (VDS = 0) VGS = ±12V ±100 nA Typ. Max. Unit ON (1) Symbol Parameter Test Conditions Min. VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 4.5 V, ID = 3 A 0.026 0.030 Ω VGS = 2.5 V, ID = 3 A 0.030 0.038 Ω Typ. Max. Unit 0.6 V DYNAMIC Symbol gfs (1) 2/8 Parameter Test Conditions Min. Forward Transconductance VDS > ID(on) x RDS(on)max, ID = 3 A 15 S Ciss Input Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 800 pF Coss Output Capacitance 180 pF Crss Reverse Transfer Capacitance 32 pF STS6DNF30V ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions Min. VDD = 15 V, ID = 3 A RG = 4.7Ω VGS = 2.5V (see test circuit, Figure 3) VDD = 15 V, ID = 6 A, VGS = 2.5 V Typ. Max. Unit 20 ns 25 ns 6.8 2 3.4 9.5 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions Min. VDD = 10 V, ID = 3 A, RG = 4.7Ω, VGS = 2.5 V (see test circuit, Figure 3) 32 13 ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Max. Unit Source-drain Current Parameter 6 A Source-drain Current (pulsed) 24 A Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions Min. Typ. ISD = 6 A, VGS = 0 ISD = 6 A, di/dt = 100A/µs, VDD = 15 V, Tj = 150°C (see test circuit, Figure 5) 1.2 25 21 1.7 V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STS6DNF30V Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations STS6DNF30V Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STS6DNF30V Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STS6DNF30V SO-8 MECHANICAL DATA mm DIM. MIN. TYP. A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.25 a2 MAX. 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 c1 45 (typ.) e 1.27 e3 3.81 0.050 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M S 0.6 0.023 8 (max.) 0016023 7/8 STS6DNF30V Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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