ISC MJ12020

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
MJ12020
DESCRIPTION
·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 450V(Min)
·Fast Turn-Off Time
APPLICATIONS
·Designed for high resolution video systems, such as : high
density graphic displays, data terminals, video scanners.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Emitter Voltage
850
V
VCEO(SUS)
Collector-Emitter Voltage
450
V
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
4
A
IBM
Base Current-Peak
8
A
PC
Collector Power [email protected]=25℃
125
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃
VEBO
B
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.4
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
MJ12020
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC=100mA ; IB=0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 3A; IB= 0.6A
1.2
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 3A; IB= 0.6A
1.5
V
ICEV
Collector Cutoff Current
VCEV=850V;VBE(off)=1.5V
VCEV=850V;VBE(off)=1.5V;TC=100℃
0.25
1.5
mA
ICER
Collector Cutoff Current
VCE= 850V; RBE= 50Ω,TC= 100℃
2.5
mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
1.0
mA
hFE
DC Current Gain
IC= 5A ; VCE= 5V
5
Current-Gain—Bandwidth Product
IC= 0.3A; VCE= 10V; ftest=1MHz
15
Output Capacitance
IE= 0; VCB= 10V; ftest=1kHz
fT
COB
CONDITIONS
MIN
TYP.
MAX
450
UNIT
V
B
B
MHz
200
pF
440
1200
ns
130
300
ns
Switching times;Inductive Load
ts
Storage Time
tf
Fall Time
isc Website:www.iscsemi.cn
IC= 3A , VCC= 40V; IB1= 0.6A;
PW= 8μs; VBE(off)= 4V
Duty Cycle≤2.0%
2