isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6251 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 100V(Min) ·High Power Dissipation APPLICATIONS ·Designed for high voltage, high current ,high speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 350 V VCEV Collector-Emitter Voltage 375 V VCER Collector-Emitter Voltage 375 V VEBO Emitter-Base Voltage 6 V 10 A 30 A n c . i m e s c s i . w w w IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous 10 A PC Collector Power Dissipation@TC=25℃ 175 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6251 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA ; IB= 0 350 V VCER Collector-Emitter Sustaining Voltage IC= 200mA ; RBE= 50Ω 375 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1.67A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 1.67A 2.25 V ICEV Collector Cutoff Current VCE= Rated VCEV; VBE= -1.5V VCE= Rated VCEV; VBE= -1.5V;TC=125℃ 5.0 10 mA ICEO Collector Cutoff Current VCE= 300V; IB= 0 5.0 mA IEBO Emitter Cutoff Current 1.0 mA hFE DC Current Gain Is/b Second Breakdown Collector Current with Base Forward Biased fT tstg tf n c . i m e s c s i . w w w Current Gain-Bandwidth Product Switching Times tr CONDITIONS Rise Time Storage Time VEB= 6V; IC= 0 IC= 10A ; VCE= 3V 6 MAX UNIT 50 VCE= 30V,t= 1.0s,Nonrepetitive 5.8 A IC= 1A ; VCE= 10V; ftest= 1.0MHz 2.5 MHz IC= 10A , VCC= 200V, IB1= -IB2= 1.67A Fall Time isc Website：www.iscsemi.cn MIN 2 2.0 μs 3.5 μs 1.0 μs