SANYO CPH6355

CPH6355
Ordering number : EN8933
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
CPH6355
General-Purpose Switching Device
Applications
Features
•
•
•
ON-resistance RDS(on)1=130mΩ(typ.)
4V drive
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
PD
Tch
Storage Temperature
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1500mm2×0.8mm)
Unit
--30
V
±20
V
--3
A
--12
A
1.6
W
150
°C
--55 to +150
°C
Package Dimensions
Product & Package Information
unit : mm (typ)
7018A-003
• Package
: CPH6
• JEITA, JEDEC
: SC-74, SOT-26, SOT-457
• Minimum Packing Quantity : 3,000 pcs./reel
0.15
5
Packing Type: TL
4
Marking
0.9
1
2
0.95
LOT No.
XF
0.05
1.6
0.2
0.6
2.8
0.2
0.6
2.9
6
TL
3
0.4
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
Electrical Connection
1, 2, 5, 6
SANYO : CPH6
3
4
http://semicon.sanyo.com/en/network
81011PE TKIM TC-00002635 No.8933-1/4
CPH6355
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
typ
Unit
max
--30
V
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
Forward Transfer Admittance
| yfs |
VDS=--10V, ID=--1.5A
2.3
RDS(on)1
ID=--1.5A, VGS=--10V
130
169
mΩ
RDS(on)2
ID=--0.5A, VGS=--4.5V
197
276
mΩ
RDS(on)3
ID=--0.5A, VGS=--4V
223
313
mΩ
Static Drain-to-Source On-State Resistance
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
--1.2
--1
μA
±10
μA
--2.6
V
S
172
pF
51
pF
Crss
36
pF
Turn-ON Delay Time
td(on)
4.6
ns
Rise Time
tr
6.6
ns
Turn-OFF Delay Time
19.4
ns
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--10V, f=1MHz
See specified Test Circuit.
VDS=--15V, VGS=--10V, ID=--3A
IS=--3A, VGS=0V
11.4
ns
3.9
nC
0.6
nC
0.8
nC
--0.95
--1.5
V
Switching Time Test Circuit
0V
--10V
VIN
VDD= --15V
ID= --1.5A
RL=15Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
CPH6355
50Ω
V
0V
.5
--4
--1.5
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
--0.9
--1.0
IT16553
0
25°
--0.5
--0.5
--25°
C
--1.0
C
VGS= --3.0V
--2.0
5°C
--1.0
Drain Current, ID -- A
--2.5
--1.5
0
VDS= --10V
.
--4
--10
--2.0
ID -- VGS
--3.0
.0V
--2.5
--6
.
--8.
0
V
Ta=25°C
0V
ID -- VDS
--3.0
Drain Current, ID -- A
S
Ta=
7
P.G
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
Gate-to-Source Voltage, VGS -- V
--4.0
--4.5
IT16554
No.8933-2/4
CPH6355
RDS(on) -- VGS
--1.5A
350
300
250
200
150
100
50
0
0
--2
--4
--6
--8
--10
--12
--14
--16
Gate-to-Source Voltage, VGS -- V
200
150
100
50
0
--60 --40
--18
3
2
C
5°
--2
=
°C
Ta
75
7
5
°C
25
0
20
40
2
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
IT16557
5
--0.001
td(off)
2
tf
10
7
tr
td(on)
5
7
--1.0
2
3
5
Drain Current, ID -- A
--9
--5
--4
--3
--2
--1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Total Gate Charge, Qg -- nC
4.0
4.5
IT16561
--1.2
IT16558
Ciss
Coss
5
Crss
0
--2
--4
--6
--8
--10
--12
--14
--16
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
--6
--1.0
f=1MHz
7
--100
7
5
3
2
--7
--0.8
100
10
--8
--0.6
2
--10
VDS= --15V
ID= --3A
--0.4
Ciss, Coss, Crss -- VDS
IT16559
VGS -- Qg
--10
7
--0.2
3
2
5
160
5
3
3
140
IT16556
7
2
2
0
1000
3
1.0
--0.1
120
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- pF
3
100
VGS=0V
--0.1
7
5
3
2
VDD= --15V
VGS= --10V
7
80
--1.0
7
5
3
2
SW Time -- ID
100
60
IS -- VSD
--10
7
5
3
2
--0.01
7
5
3
2
3
0
--20
Ambient Temperature, Ta -- °C
5
1.0
A
--0.5
, I D=
V
0
.
4
= -VGS
--0.5A
, I D=
V
5
.
4
= -VGS
= --1.5A
10.0V, I D
V GS= --
250
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
7
Drain Current, ID -- A
Switching Time, SW Time -- ns
300
VDS= --10V
0.1
--0.01
Gate-to-Source Voltage, VGS -- V
350
IT16555
| yfs | -- ID
10
400
Ta=7
5°C
25°C
400
450
C
ID= --0.5A
--25°
450
RDS(on) -- Ta
500
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
500
--10
7
5
3
2
--20
IT16560
ASO
IDP= --12A (PW≤10μs)
10
0μ
10
ms
ID= --3A
DC
--1.0
7
5
3
2
--0.1
7
5
3
2
--18
s
10
op
s
1m
0m
era
s
tio
Operation in this area
is limited by RDS(on).
n(
Ta
=
25
°C
)
Ta=25°C
Single pulse
When mounted on ceramic substrate (1500mm2×0.8mm)
--0.01
--0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
3
Drain-to-Source Voltage, VDS -- V
5 7 --100
IT16562
No.8933-3/4
CPH6355
PD -- Ta
Allowable Power Dissipation, PD -- W
1.8
When mounted on ceramic substrate
(1500mm2×0.8mm)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT16563
Note on usage : Since the CPH6355 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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the performance, characteristics, and functions of the described products in the independent state, and are
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This catalog provides information as of August, 2011. Specifications and information herein are subject
to change without notice.
PS No.8933-4/4