SANYO FTD2017C

FTD2017C
Ordering number : ENA1930
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
FTD2017C
General-Purpose Switching Device
Applications
Features
•
•
•
Low ON-resistance
Mount heigt 1.1mm
Drain common specifications
•
•
•
2.5V drive
Composite type, facilitating high-density mounting
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
Unit
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
20
ID
IDP
Drain Current (Pulse)
Allowable Power Dissipation
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1000mm2×0.8mm) 1unit
V
±12
V
6
A
40
A
1.35
W
Total Dissipation
PD
PT
1.4
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
When mounted on ceramic substrate (1000mm2×0.8mm)
Product & Package Information
unit : mm (typ)
7006A-005
• Package
: TSSOP8
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
0.95
Package Dimensions
3.0
Packing Type : TL
5
0.5
8
0.125
Marking
LOT No.
6.4
4.5
D2017C
TL
1
4
0.95
0.25
0.05 1.0
0.425
0.65
1 : Drain
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain
Electrical Connection
8
7
6
5
1
2
3
4
SANYO : TSSOP8
http://semicon.sanyo.com/en/network
30211PA TKIM TC-00002574 No. A1930-1/4
FTD2017C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Ratings
Conditions
min
typ
Unit
max
V(BR)DSS
IDSS
ID=1mA, VGS=0V
VDS=20V, VGS=0V
IGSS
VGS(off)
| yfs |
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
RDS(on)1
ID=6A, VGS=4.5V
13
17
23
mΩ
RDS(on)2
ID=6A, VGS=4V
14
18
24
mΩ
RDS(on)3
ID=3A, VGS=3.1V
15
19
30
mΩ
RDS(on)4
ID=3A, VGS=2.5V
15.4
20
33
mΩ
Turn-ON Delay Time
td(on)
See specified Test Circuit.
620
Rise Time
tr
See specified Test Circuit.
1160
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
3660
ns
Fall Time
tf
Qg
See specified Test Circuit.
2010
ns
Total Gate Charge
VDS=10V, VGS=4.5V, ID=6A
6.2
nC
Gate-to-Source Charge
Qgs
nC
Qgd
VDS=10V, VGS=4.5V, ID=6A
VDS=10V, VGS=4.5V, ID=6A
1.7
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
VSD
IS=6A, VGS=0V
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
20
V
0.5
1
μA
±10
μA
1.3
VDS=10V, ID=6A
V
7.5
S
ns
1.3
nC
0.79
1.2
V
Switching Time Test Circuit
VDD=10V
VIN
4.5V
0V
ID=5A
RL=2Ω
VIN
D
VOUT
PW=10μs
D.C.≤1%
Rg
G
P.G
S
50Ω
FTD2017C
Rg=2.1kΩ
ID -- VDS
8
VGS=1.5V
3
4
3
2
2
1
1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Drain-to-Source Voltage, VDS -- V
0.9
1.0
IT16339
Ta=
75°
C
4
5
0
--25
°C
5
6
°C
6
7
25
7
VDS=10V
9
Drain Current, ID -- A
Drain Current, ID -- A
8
3.0V
2.5V
9
ID -- VGS
10
4.0V
10.0V 4.5V
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Gate-to-Source Voltage, VGS -- V
1.8
2.0
IT16340
No. A1930-2/4
FTD2017C
RDS(on) -- VGS
45
40
6A
30
25
20
15
10
5
0
2
4
6
8
10
Gate-to-Source Voltage, VGS -- V
7
| yfs | -- ID
25°
Source Current, IS -- A
7
5
3
0.1
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
SW Time -- ID
10000
VDD=10V
VGS=4.5V
Switching Time, SW Time -- ns
7
tf
5
3
td(off)
2
tr
1000
7
td(on)
5
3
2
100
0.1
2
3
5
7
2
1.0
3
5
Drain Current, ID -- A
10
=6A
V, I D
=4.0
VGS
5
--40
--20
0
20
40
60
80
100
120
140
160
IT16342
IS -- VSD
VGS=0V
3
2
1.0
7
5
3
2
0.1
7
5
10
s
10
10
0μ
s
0m
m
s
s
op
tio
n
Operation in this
area is limited by RDS(on).
Ta=25°C
Single pulse
When mounted on ceramic substrate (1000mm2×0.8mm) 1unit
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
Drain-to-Source Voltage, VDS -- V
5 7 100
IT16347
0.6
0.8
1.0
1.2
IT16344
VDS=10V
ID=6A
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10
IT16345
era
0.01
0.01
0.4
0
1
2
3
4
5
7
6
Total Gate Charge, Qg -- nC
IT16346
PD -- Ta
1.6
1m
DC
0.2
VGS -- Qg
4.5
7
IDP=40A (PW≤10μs)
ID=6A
0
Diode Forward Voltage, VSD -- V
Allowable Power Dissipation, PD -- W
Drain Current, ID -- A
ASO
1.0
7
5
3
2
0.1
7
5
3
2
15
0.01
5 7 10
IT16343
Drain Current, ID -- A
10
7
5
3
2
20
3
2
2
100
7
5
3
2
A
I =3
2.5V, D
=
VGS
A
I =6
4.5V, D
=
S
VG
Ambient Temperature, Ta -- °C
C
C
5°
--2
=
Ta
°C
75
1.0
25
10
7
5
3
2
=3A
V, I D
=3.1
VGS
30
IT16341
VDS=10V
5
35
0
--60
12
Gate-to-Source Voltage, VGS -- V
Forward Transfer Admittance, | yfs | -- S
10
40
5°C
25°C
--25°
C
0
45
Ta=
7
35
ID=3A
RDS(on) -- Ta
50
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
50
When mounted on ceramic substrate
(1000mm2×0.8mm)
1.4
1.35
1.2
1.0
To
t
0.8
1u
al
di
nit
ss
0.6
ip
ati
on
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
IT16348
No. A1930-3/4
FTD2017C
Note on usage : Since the FTD2017C is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of March, 2011. Specifications and information herein are subject
to change without notice.
PS No. A1930-4/4