SANYO FTD2017M

FTD2017M
Ordering number : ENA1176
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
FTD2017M
General-Purpose Switching Device
Applications
Features
•
•
•
•
•
Low ON-resistance.
2.5V drive.
Mount height 1.1mm.
Composite type, facilitating high-density mounting.
Drain common specifications.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
VDSS
VGSS
Unit
20
V
±12
V
6
A
ID
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
40
A
Allowable Power Dissipation
PD
When mounted on ceramic substrate (1000mm 2✕0.8mm) 1unit
1.2
W
Total Dissipation
PT
Tch
When mounted on ceramic substrate (1000mm 2✕0.8mm)
Channel Temperature
Storage Temperature
Tstg
1.25
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : D2017M
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
⏐yfs⏐
Conditions
ID=1mA, VGS=0V
Ratings
min
typ
20
V
VDS=20V, VGS=0V
VGS= ±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=6A
Unit
max
±10
μA
μA
1.3
V
1
0.5
5
8.5
S
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71608PA TI IM TC-00001413 No. A1176-1/4
FTD2017M
Continued from preceding page.
Parameter
Symbol
Static Drain-to-Source On-State Resistance
min
13
17
23
mΩ
18
24
mΩ
RDS(on)3
RDS(on)4
ID=3A, VGS=3.1V
ID=3A, VGS=2.5V
15
19
30
mΩ
15.4
20
33
mΩ
Turn-OFF Delay Time
td(off)
tf
Fall Time
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
See specified Test Circuit.
930
ns
See specified Test Circuit.
1460
ns
See specified Test Circuit.
6400
ns
See specified Test Circuit.
3040
ns
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=4.5V, ID=6A
VDS=10V, VGS=4.5V, ID=6A
VDS=10V, VGS=4.5V, ID=6A
Diode Forward Voltage
VSD
IS=6A, VGS=0V
Package Dimensions
8
7
6
0.05
6.4
4.5
1.0
1 : Drain
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain
SANYO : TSSOP8
0.25
0.95
nC
2.5
0.8
nC
1.2
V
1 : Drain
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain
0.5
4
nC
2
5
0.125
1
10
Electrical Connection
unit : mm (typ)
7006A-005
5
Unit
14
Rise Time
8
max
ID=6A, VGS=4.5V
ID=6A, VGS=4V
td(on)
tr
3.0
typ
RDS(on)1
RDS(on)2
Turn-ON Delay Time
0.95
Ratings
Conditions
0.425
0.65
Top view
1
2
3
4
Switching Time Test Circuit
VDD=10V
VIN
4.5V
0V
ID=5A
RL=2Ω
VIN
D
VOUT
PW=10μs
D.C.≤1%
G
P.G
Rg
FTD2017M
50Ω
S
Rg=2.4kΩ
No. A1176-2/4
FTD2017M
ID -- VDS
4 .5
10.0
9
9
2
1
0
0.1
0.2
0.3
0.4
0
0.5
Drain-to-Source Voltage, VDS -- V
1.0
1.5
2.0
2.5
Gate-to-Source Voltage, VGS -- V
IT13596
RDS(on) -- Tc
40
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
30
25
20
15
10
2
4
6
8
10
Gate-to-Source Voltage, VGS -- V
Source Current, IS -- A
7
Ta=
5
°C
--25
75°C
3
2
1.0
7
0.1
2
3
5
7
2
1.0
3
5
Drain Current, ID -- A
7
10
IT13599
ID=6A
10
Operation in this area
is limited by RDS(on).
10 ms
0m
s
op
era
tio
n
Ta=25°C
Single pulse
When mounted on ceramic substrate
(1000mm2✕0.8mm) 1unit
0.01
0.01
2
3
5 7 0.1
2
3
5 7 1.0
=2
V GS
20
15
=
VGS
=6.0
V, I D
0
.
4
=
VGS
10
--40
--20
0
20
A
40
60
80
100
120
140
160
IT13860
IS -- VSD
VGS=0V
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Diode Forward Voltage, VSD -- V
Allowable Power Dissipation, PD -- W
PW≤10μs
10
0μ
s
1m
s
0A
=6.
I
D
,
4.5V
0A
=3.
I
D
,
.5V
1.0
1.1
IT13600
PD -- Ta
1.6
IDP=40A
1.0
7
5
3
2
25
0.001
0.2
ASO
DC
=3
S
VG
10
7
5
3
2
2
C
25°
.0A
Ambient Temperature, Ta -- °C
VDS=10V
10
30
IT13859
⏐yfs⏐ -- ID
3
=3
, ID
V
1
.
5
--60
5
0
35
--25°C
6A
Ta=
75°C
ID=3A
25°C
35
0.1
7
5
3
2
0.5
IT13809
RDS(on) -- VGS
40
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
3
1
0
Forward Transfer Admittance, ⏐yfs⏐ -- S
4
2
0
Drain Current, ID -- A
5
25°C
3
6
°C
4
7
--25°C
VGS=1.5V
5
8
Ta=7
5
6
Drain Current, ID -- A
Drain Current, ID -- A
7
10
7
5
3
2
VDS=10V
10
8
100
7
5
3
2
ID -- VGS
11
V
4.0
V
3.1
V
2.5
V
V
10
When mounted on ceramic substrate
(1000mm2✕0.8mm)
1.4
1.25
1.2
1.0
To
tal
0.8
1u
dis
nit
0.6
sip
ati
on
0.4
0.2
0
2
3
5 7 10
Drain-to-Source Voltage, VDS -- V
2 3
IT13687
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT13688
No. A1176-3/4
FTD2017M
Note on usage : Since the FTD2017M is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of July, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1176-4/4