STMICROELECTRONICS STB80PF55

STB80PF55
STP80PF55
P-channel 55 V, 0.016 Ω, 80 A TO-220, D2PAK
STripFETTM II Power MOSFET
Features
■
Type
VDSS
RDS(on)
ID
STP80PF55
55V
<0.018Ω
80A
STB80PF55
55V
<0.018Ω
80A
Extremely dv/dt capability
3
3
1
1
■
100% avalanche tested
■
Application oriented characterization
D2PAK
2
TO-220
Application
■
Switching applications
Description
Figure 1.
Internal schematic diagram
These Power MOSFETs are the latest
development of STMicroelectronics unique "single
feature size" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
allowing remarkable manufacturing
reproducibility.
Table 1.
Device summary
Order code
Marking
Package
Packaging
STP80PF55
P80PF55
TO-220
Tube
STB80PF55
B80PF55
D2PAK
Tape and reel
August 2010
Doc ID 8177 Rev 6
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www.st.com
16
Contents
STB80PF55, STP80PF55
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
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STB80PF55, STP80PF55
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
55
V
VGS
Gate-source voltage
±16
V
ID(1)
Drain current (continuous) at TC = 25°C
80
A
ID
Drain current (continuous) at TC = 100°C
57
A
Drain current (pulsed)
320
A
Total dissipation at TC = 25°C
300
W
Derating factor
2
W/°C
Peak diode recovery voltage slope
7
V/ns
IDM
(2)
PTOT
dv/dt (3)
EAS(4)
Single pulse avalanche energy
1.4
J
Tj
Tstg
Operating junction temperature
Storage temperature
-55 to 175
°C
Value
Unit
Thermal resistance junction-case max
0.5
°C/W
Thermal resistance junction-ambient max
62.5
°C/W
Maximum lead temperature for soldering purpose
300
°C
1. Current limited by package.
2. Pulse width limited by safe operating area .
3. ISD < 40A, di/dt < 300 A/µs, VDD=80% V(BR)DSS.
4. Starting Tj=25°C, ID=80A, VDD=40V.
Table 3.
Symbol
Rthj-case
Rthj-a
Tl
Note:
Thermal data
Parameter
For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
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Electrical characteristics
2
STB80PF55, STP80PF55
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Drain-source
breakdown voltage
ID = 250 mA, VGS = 0
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, TC=125 °C
1
10
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ±16 V
±10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 40 A
V(BR)DSS
Table 5.
Symbol
55
2
V
3
0.016 0.018
Ω
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Forward transconductance
VDS > ID(on) x RDS(on)max,
ID= 40 A
-
32
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1MHz,
VGS = 0
-
5500
1130
600
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
ID = 25 A, VDD = 80 V,
VGS = 10 V
(see Figure 15)
-
190
27
65
gfs
Table 6.
Symbol
4/16
On/off states
258
nC
nC
nC
Switching times
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD=25 V, ID=40 A,
RG=4.7 Ω, VGS=10 V
(see Figure 14)
-
35
190
-
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD=25 V, ID=40 A,
RG=4.7 Ω, VGS=10 V
(see Figure 14)
-
165
80
-
ns
ns
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
Vclamp=40 V, ID=80 A,
RG=4.7 Ω, VGS=10 V
(see Figure 14)
-
60
40
85
-
ns
ns
ns
Doc ID 8177 Rev 6
STB80PF55, STP80PF55
Table 7.
Electrical characteristics
Source drain diode
Symbol
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
trr
Qrr
IRRM
Test condictions
Min.
Typ.
Max.
Unit
-
10
40
A
A
ISD = 80 A, VGS = 0
-
1.6
V
ISD = 80 A, di/dt = 100 A/µs
VDD = 25 V, Tj =150 °C
-
110
495
9
ns
µC
A
1. Pulse width limited by Tjmax .
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %.
Note:
For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
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Electrical characteristics
STB80PF55, STP80PF55
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220 and
D2PAK
Figure 3.
Thermal impedance for TO-220 and
D2PAK
Figure 4.
Output characterisics
Figure 5.
Transfer characteristics
Figure 6.
Transconductance
Figure 7.
Static drain-source on resistance
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STB80PF55, STP80PF55
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized on resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized BVDSS vs temperature
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Test circuits
3
STB80PF55, STP80PF55
Test circuits
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load
switching and diode recovery times
8/16
Doc ID 8177 Rev 6
STB80PF55, STP80PF55
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Doc ID 8177 Rev 6
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Package mechanical data
STB80PF55, STP80PF55
D2PAK mechanical data
Table 8.
mm
inch
Dim
Min.
Max.
Min.
Typ.
Max.
A
4.40
4.60
0.173
0.181
A1
0.03
0.23
0.001
0.009
b
0.70
0.93
0.027
0.037
b2
1.14
1.70
0.045
0.067
c
0.45
0.60
0.017
0.024
c2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
D1
7.50
E
10
E1
8.50
e
0.295
10.40
0.394
0.409
0.334
2.54
0.1
e1
4.88
5.28
0.192
0.208
H
15
15.85
0.590
0.624
J1
2.49
2.69
0.099
0.106
L
2.29
2.79
0.090
0.110
L1
1.27
1.40
0.05
0.055
L2
1.30
1.75
0.051
0.069
R
V2
10/16
Typ.
0.4
0°
0.016
8°
Doc ID 8177 Rev 6
0°
8°
STB80PF55, STP80PF55
Package mechanical data
Figure 17. D2PAK drawing
0079457_O
Doc ID 8177 Rev 6
11/16
Package mechanical data
Table 9.
STB80PF55, STP80PF55
TO-220 mechanical data
mm
Dim
Min.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
12/16
Typ.
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
Doc ID 8177 Rev 6
STB80PF55, STP80PF55
Package mechanical data
Figure 18. TO-220 drawing
Doc ID 8177 Rev 6
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Packaging mechanical data
5
STB80PF55, STP80PF55
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
MAX.
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
0.933 0.956
* on sales type
14/16
Doc ID 8177 Rev 6
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
26.4
0.960 1.039
0.059
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STB80PF55, STP80PF55
6
Revision history
Revision history
Table 10.
Document revision history
Date
Revision
Changes
09-Sep-2004
4
Revalidation
12-Sep-2006
5
New template, D2PAK added
09-Aug-2010
6
Content reworked to improve readability, no technical changes.
Doc ID 8177 Rev 6
15/16
STB80PF55, STP80PF55
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