TSM13N50 500V N-Channel Power MOSFET ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 0.48 @ VGS =10V 6.5 General Description The TSM13N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Block Diagram Features ● ● ● ● Low RDS(ON) 0.4Ω (Typ.) Low gate charge typical @ 36nC (Typ.) Low Crss typical @ 23pF (Typ.) Fast Switching Ordering Information Part No. Package Packing TSM13N50CI C0 ITO-220 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±30 V 13 A 8.2 A Tc = 25ºC Continuous Drain Current Tc = 100ºC ID Pulsed Drain Current * IDM 52 A Avalanche Current (Single) (Note 2) IAS 13 A Single Pulse Avalanche Energy (Note 2) EAS 751 mJ Avalanche Current (Repetitive) (Note 1) IAR 13 A Repetitive Avalanche Energy (Note 1) EAR 19.5 mJ PTOT 40 W TJ 150 ºC TSTG -55 to +150 Symbol Limit RӨJC 3.12 o 62.5 o o Total Power Dissipation @ TC = 25 C Operating Junction Temperature Storage Temperature Range * Limited by maximum junction temperature o C Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec RӨJA 1/8 Unit C/W C/W Version: B10 TSM13N50 500V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 500 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 6.5A RDS(ON) -- 0.4 0.48 Ω Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2.0 -- 4.0 V Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V IDSS -- -- 1 uA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±10 uA Forward Transfer Conductance VDS = 10V, ID = 6.5A gfs -- 15 -- S Qg -- 36 -- Qgs -- 8.3 -- Qgd -- 9.8 -- Ciss -- 1960 -- Coss -- 190 -- Crss -- 23 -- td(on) -- 25 -- Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 400V, ID = 13A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz nC pF c Turn-On Delay Time Turn-On Rise Time VGS = 10V, ID = 12A, tr -- 100 -- Turn-Off Delay Time VDD = 300V, RG =25Ω td(off) -- 130 -- tf -- 100 -- Turn-Off Fall Time nS Source-Drain Diode Ratings and Characteristic Source Current Integral reverse diode in IS -- -- 13 A Source Current (Pulse) the MOSFET ISM -- -- 52 A Diode Forward Voltage IS = 13A, VGS = 0V VSD -- -- 1.4 V Reverse Recovery Time VGS = 0V, IS =12A, tfr -- 410 -- nS dIF/dt = 100A/us Reverse Recovery Charge Qfr -Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature Note 2: VDD = 50V, IAS=13A, L=8mH, RG =25Ω, Starting TJ=25ºC Note 3: Pulse test: pulse width ≤300uS, duty cycle ≤2% Note 4: Essentially Independent of Operating Temperature 4.5 -- uC 2/8 Version: B10 TSM13N50 500V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 3/8 Version: B10 TSM13N50 500V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 4/8 Version: B10 TSM13N50 500V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 5/8 Version: B10 TSM13N50 500V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) BVDS vs. Junction Temperature Drain Current vs., Case Temperature Capacitance Maximum Safe Operating Area 6/8 Version: B10 TSM13N50 500V N-Channel Power MOSFET ITO-220 Mechanical Drawing DIM A B C D E F G H I J K L M N O ITO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.04 10.07 0.395 0.396 6.20 (typ.) 0.244 (typ.) 2.20 (typ.) 0.087 (typ.) ∮1.40 (typ.) ∮0.055 (typ.) 15.0 15.20 0.591 0.598 0.52 0.54 0.020 0.021 2.35 2.73 0.093 0.107 13.50 13.55 0.531 0.533 1.11 1.49 0.044 0.058 2.60 2.80 0.102 0.110 4.49 4.50 0.176 0.177 1.15 (typ.) 0.045 (typ.) 3.03 3.05 0.119 0.120 2.60 2.80 0.102 0.110 6.55 6.65 0.258 0.262 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 7/8 Version: B10 TSM13N50 500V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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