TSC TSM1N60LCH

TSM1N60L
600V N-Channel Power MOSFET
TO-252
PRODUCT SUMMARY
TO-251
Pin Definition:
1. Gate
2. Drain
3. Source
VDS (V)
RDS(on)(Ω)
ID (A)
600
12 @ VGS =10V
1
General Description
The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast
recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM
motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe
operating areas are critical and offer additional and safety margin against unexpected voltage transients.
Features
●
●
●
●
●
Block Diagram
Robust high voltage termination
Avalanche energy specified
Diode is characterized for use in bridge circuits
Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
IDSS and VDS(on) specified at elevated temperature
Ordering Information
Part No.
Package
Packing
TSM1N60LCP RO
TO-252
2.5Kpcs / 13” Reel
TSM1N60LCH C5
TO-251
50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
600
V
Gate-Source Voltage
VGS
±30
V
ID
1
A
IDM
4
A
IS
1
A
EAS
20
mJ
PD
2.5
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a,b
Single Pulse Drain to Source Avalanche Energy
(VDD = 100V, VGS=10V, IAS=2A, L=10mH, RG=25Ω)
o
Maximum Power Dissipation @Ta = 25 C
Operating Junction Temperature
TJ
Operating Junction and Storage Temperature Range
TJ, TSTG
1/7
W
+150
o
-55 to +150
o
C
C
Version: A07
TSM1N60L
600V N-Channel Power MOSFET
Thermal Performance
Parameter
Lead Temperature (1/8” from case)
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t ≤ 10sec
Symbol
Limit
TL
RӨJA
10
62.5
Unit
S
C/W
o
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
Drain-Source On-State Resistance
VGS = 10V, ID = 0.6A
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
IDSS
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
Forward Transconductance
VDS ≧50V, ID = 0.5A
gfs
Diode Forward Voltage
IS = 1A, VGS = 0V
VSD
b
Dynamic
Total Gate Charge
Qg
VDS = 400V, ID = 1A,
Gate-Source Charge
Qgs
VGS = 10V
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
VDS = 25V, VGS = 0V,
Output Capacitance
Coss
f = 1.0MHz
Reverse Transfer Capacitance
Crss
c
Switching
Turn-On Delay Time
td(on)
Turn-On Rise Time
VGS = 10V, ID = 1A,
tr
V
=
300V,
R
=
6Ω
Turn-Off Delay Time
td(off)
DS
G
Turn-Off Fall Time
tf
Notes:
a. Pulse test: pulse width <=300uS, duty cycle <=2%
b. For design reference only, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
2/7
Min
Typ
Max
Unit
600
-2.0
-----
-10.5
---10
--
-12
4.0
10
± 100
-1.5
V
Ω
V
uA
nA
S
V
-------
8.5
1.8
4
210
28
4.2
14
------
-----
8
21
18
24
-----
nC
pF
nS
Version: A07
TSM1N60L
600V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/7
Version: A07
TSM1N60L
600V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Maximum Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/7
Version: A07
TSM1N60L
600V N-Channel Power MOSFET
SOT-252 Mechanical Drawing
DIM
A
A1
B
C
D
E
F
G
G1
G2
H
I
J
K
L
M
TO-252 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
2.3BSC
0.09BSC
4.6BSC
0.18BSC
6.80
7.20
0.268
0.283
5.40
5.60
0.213
0.220
6.40
6.65
0.252
0.262
2.20
2.40
0.087
0.094
0.00
0.20
0.000
0.008
5.20
5.40
0.205
0.213
0.75
0.85
0.030
0.033
0.55
0.65
0.022
0.026
0.35
0.65
0.014
0.026
0.90
1.50
0.035
0.059
2.20
2.80
0.087
0.110
0.50
1.10
0.020
0.043
0.90
1.50
0.035
0.059
1.30
1.70
0.051
0.67
Marking Diagram
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L = Lot Code
5/7
Version: A07
TSM1N60L
600V N-Channel Power MOSFET
SOT-251 Mechanical Drawing
DIM
A
A1
b
C
D
D1
E
e
F
L
L1
TO-251 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
2.20
2.4
0.087
0.095
1.10
1.30
0.043
0.051
0.40
0.80
0.016
0.032
0.40
0.60
0.016
0.024
6.70
7.30
0.264
0.287
5.40
5.65
0.213
0.222
6.40
6.65
0.252
0.262
2.10
2.50
0.083
0.098
0.40
0.60
0.016
0.024
7.00
8.00
0.276
0.315
1.60
1.86
0.063
0.073
Marking Diagram
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L = Lot Code
6/7
Version: A07
TSM1N60L
600V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
7/7
Version: A07