TSM5ND50 500V N-Channel Power MOSFET TO-252 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 500 1.5 @ VGS =10V 2.2 General Description The TSM5ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. Features Block Diagram ● Low gate charge typical @ 20nC ● Low Crss typical @ 17pF ● Fast Switching ● 100% avalanche tested ● Improved dv/dt capability ● ESD Protection Ordering Information Part No. Package Packing TO-252 2,500pcs / 13” Reel TSM5ND50CP RO N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±30 V Continuous Drain Current ID 4.4 A Pulsed Drain Current IDM 17.6 A Continuous Source Current (Diode Conduction) Peak Diode Recovery (Note 2) Single Pulse Drain to Source Avalanche Energy (Note 3) o Total Power Dissipation @Ta = 25 C Operating Junction and Storage Temperature Range IS 4.4 A dv/dt 4.5 V/ns EAS 130 mJ PDTOT 70 TJ, TSTG -55 to +150 Symbol Limit W o C Thermal Performance Parameter Thermal Resistance - Junction to Case RӨJC Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec RӨJA 1/8 Unit 1.78 o C/W 62.5 o C/W Version: C07 TSM5ND50 500V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 500 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 2.2A RDS(ON) -- 1.2 1.5 Ω Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 3.0 -- 4.5 V Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V IDSS -- -- 1 uA Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±10 uA Forward Transconductance VDS = 15V, ID = 2.2A gfs -- 3.1 -- S Qg -- 20 -- Qgs -- 4 -- Qgd -- 10 -- Ciss -- 535 -- Coss -- 75 -- Crss -- 17 -- td(on) -- 21.6 -- Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 250V, ID = 4.4A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz nC pF c Turn-On Delay Time Turn-On Rise Time VGS = 10V, ID = 4.4A, tr -- 11.7 -- Turn-Off Delay Time VDD = 250V, RG = 25Ω td(off) -- 14.5 -- tf -- 4.5 -- ISD -- -- 4.4 A VSD -- 0.82 1.2 V Turn-Off Fall Time nS Source Drain Diode Source-drain Current Diode Forward Voltage IS = 4.4A, VGS = 0V Reverse Recovery Time VDD = 30V, ISD = 4.4A, trr -- 310 -- nS Reverse Recovery Charge dIF/dt = 100A/us. Qrr -- 1425 -- uC Reverse Recovery Current TJ=150ºC Qrr -- 9.2 -- uC Notes: 1. Pulse test: pulse width ≤300uS, duty cycle ≤2% 2. ISD<4.4A, di/dt<200A/us, VDD<BVDSS 3. Starting VDD = 50V, IAS=4.4A, TJ=25ºC 4. For design reference only, not subject to production testing. 5. Switching time is essentially independent of operating temperature. 2/8 Version: C07 TSM5ND50 500V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/8 Version: C07 TSM5ND50 500V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Maximum Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Ambient 4/8 Version: C07 TSM5ND50 500V N-Channel Power MOSFET Unclamped Inductive Load Test Circuit and Waveform Switching Time Test Circuits for Resistive Load Gate Charge Test Circuit 5/8 Version: C07 TSM5ND50 500V N-Channel Power MOSFET Test Circuit for Inductive Load Switching and Diode Recovery Times 6/8 Version: C07 TSM5ND50 500V N-Channel Power MOSFET SOT-252 Mechanical Drawing TO-252 DIMENSION DIM A A1 MILLIMETERS MIN MAX 2.3BSC 4.6BSC INCHES MIN MAX 0.09BSC 0.18BSC B 6.80 7.20 0.268 0.283 C 5.40 5.60 0.213 0.220 D 6.40 6.65 0.252 0.262 E 2.20 2.40 0.087 0.094 F 0.00 0.20 0.000 0.008 G 5.20 5.40 0.205 0.213 G1 0.75 0.85 0.030 0.033 G2 0.55 0.65 0.022 0.026 H 0.35 0.65 0.014 0.026 I 0.90 1.50 0.035 0.059 J 2.20 2.80 0.087 0.110 K 0.50 1.10 0.020 0.043 L 0.90 1.50 0.035 0.059 M 1.30 1.70 0.051 0.67 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 7/8 Version: C07 TSM5ND50 500V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 8/8 Version: C07