KSC5603D KSC5603D High Voltage High Speed Power Switch Application • • • • Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Equivalent Circuit C B TO-220 1 1.Base E 2.Collector 3.Emitter NPN Silicon Transistor Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 1600 Units V VCEO VEBO Collector-Emitter Voltage 800 V Emitter-Base Voltage 12 V IC Collector Current (DC) 3 A ICP *Collector Current (Pulse) 6 A IB Base Current (DC) 2 A IBP *Base Current (Pulse) 4 A PC Power Dissipation(TC=25°C) 100 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C * Pulse Test: Pulse Width=5ms, Duty Cycle < 10% Thermal Characteristics TC=25°C unless otherwise noted Symbol Rθjc Thermal Resistance Junction to Ambient Rθja TL Characteristics Junction to Case Maximun Lead Temperature for Soldering Purpose : 1/8” from Case for 5 seconds ©2003 Fairchild Semiconductor Corporation Rating 1.25 Unit °C/W 62.5 270 °C Rev. C1, June 2003 Symbol BVCBO Parameter Collector-Base Breakdown Voltage BVCEO BVEBO ICES ICEO Test Condition IC=0.5mA, IE=0 Min. 1600 Collector-Emitter Breakdown Voltage IC=5mA, IB=0 800 870 V Emitter-Base Breakdown Voltage IE=0.5mA, IC=0 12 14.8 V Collector Cut-off Current VCES=1600V, IE=0 TC=125°C VCE=800V, VBE=0 TC=125°C Collector Cut-off Current IEBO Emitter Cut-off Current VEB=12V, IC=0 hFE DC Current Gain VCE=3V, IC=0.4A VCE=10V, IC=5mA VCE(sat) Collector-Emitter Saturation Voltage TC=25°C 0.01 20 500 29 35 6 15 43 TC=125°C 20 IC=500mA, IB=50mA TC=125°C TC=25°C TC=25°C 100 0.05 20 TC=125°C 100 Units V µA µA 1000 TC=25°C TC=25°C Max. 1000 TC=125°C IC=250mA, IB=25mA IC=1A, IB=0.2mA 0.01 TC=25°C TC=25°C Typ. 1689 µA 46 0.5 1.25 V 1.5 2.5 V 1.2 2.5 V V TC=125°C VBE(sat) Base-Emitter Saturation Voltage IC=500mA, IB=50mA TC=25°C 0.74 1.2 TC=125°C 0.61 1.1 IC=2A, IB=0.4A TC=25°C 0.85 1.2 TC=125°C 0.74 1.1 V Cib Input Capacitance VEB=10V, IC=0, f=1MHz 745 1000 pF Cob Output Capacitance VCB=10V, IE=0, f=1MHz 56 500 pF fT Current Gain Bandwidth Product IC=0.1A,VCE=10V VF Diode Forward Voltage IF=0.4A 5 TC=25°C MHz 0.76 1.2 V 0.83 1.5 V TC=125°C IF=1A TC=25°C TC=125°C ©2003 Fairchild Semiconductor Corporation V V Rev. C1, June 2003 KSC5603D Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=20µs) tON Turn On Time tSTG Storage Time tF Fall Time IC=0.3A, IB1=50mA IB2=150A VCC=125V RL = 416Ω Min TC=25°C Typ. Max. Units 400 600 ns 2.1 2.3 µs 310 1000 ns 600 1100 ns 1.3 1.5 µs 180 350 TC=125°C TC=25°C ns 2.0 µs TC=125°C TC=25°C TC=125°C tON Turn On Time tSTG Storage Time tF Fall Time IC=0.5A, IB1=50mA IB2=250mA VCC=125V RL = 250Ω ns TC=25°C TC=125°C ns TC=25°C µs TC=125°C TC=25°C TC=125°C ns ns INDUCTIVE LOAD SWITCHING (VCC=15V) tON tSTG Turn On Time Storage Time tF Fall Time tON Turn On Time tSTG Storage Time IC=0.3A, IB1=50mA IB2=150mA, Vz=300V LC=200H TC=25°C 0.6 0.73 0.9 TC=25°C 170 250 ns 180 250 ns 0.84 1.0 µs 140 175 ns 170 200 ns TC=125°C ns TC=25°C TC=125°C tF Fall Time IC=0.5A, IB1=50mA IB2=250mA, Vz=300V LC=200H TC=25°C µs TC=125°C TC=25°C TC=125°C ©2003 Fairchild Semiconductor Corporation ns 0.7 TC=125°C TC=25°C µs µs TC=125°C ns ns Rev. C1, June 2003 KSC5603D Electrical Characteristics TC=25°C unless otherwise noted KSC5603D Package Dimensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev. C1, June 2003 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOSTM HiSeC™ EnSignaTM I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ PACMAN™ POP™ ISOPLANAR™ Power247™ LittleFET™ PowerTrench MicroFET™ QFET MicroPak™ QS™ MICROWIRE™ QT Optoelectronics™ MSX™ Quiet Series™ MSXPro™ RapidConfigure™ OCX™ RapidConnect™ OCXPro™ SILENT SWITCHER OPTOLOGIC SMART START™ OPTOPLANAR™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I3