Si1021R Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS(min.) (V) RDS(on) (Ω) VGS(th) (V) ID (mA) - 60 4.0 at VGS = - 10 V - 1 to 3.0 - 190 SC-75A (SOT-416) G RoHS COMPLIANT • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. • Battery Operated Systems • Power Supply Converter Circuits • Solid-State Relays 1 D Marking Code: F 2 Halogen-free Option Available TrenchFET® Power MOSFETs High-Side Switching Low On-Resistance: 4 Ω Low Threshold: - 2 V (typ.) Fast Switching Speed: 20 ns (typ.) Low Input Capacitance: 20 pF (typ.) Miniature Package ESD Protected: 2000 V APPLICATIONS 3 S • • • • • • • • • BENEFITS Top View Ordering Information: Si1021R-T1-E3 (Lead (Pb)-free) Si1021R-T1-GE3 (Lead (Pb)-free and Halogen-free) • • • • • • Ease in Driving Switches Low Offset Voltage Low-Voltage Operation High-Speed Circuits Easily Driven without Buffer Small Board Area ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Symbol VDS VGS TA = 25 °C TA = 85 °C Pulsed Drain Currentb Power Dissipationa Maximum Junction-to-Ambienta Operating Junction and Storage Temperature Range Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71410 S-81543-Rev. D, 07-Jul-08 ID IDM TA = 25 °C TA = 85 °C PD RthJA TJ, Tstg Limit - 60 ± 20 - 190 - 135 - 650 250 130 500 - 55 to 150 Unit V mA mW °C/W °C www.vishay.com 1 Si1021R Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 10 µA - 60 VGS(th) VDS = VGS, ID = - 0.25 mA -1 Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage IGSS Gate-Body Leakage IDSS Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltagea ID(on) a RDS(on) - 3.0 VDS = 0 V, VGS = ± 20 V ± 10 VDS = 0 V, VGS = ± 10 V ± 200 VDS = 0 V, VGS = ± 10 V, TJ = 85 °C ± 500 VDS = 0 V, VGS = ± 5 V ± 100 VDS = - 50 V, VGS = 0 V - 25 VDS = - 50 V, VGS = 0 V, TJ = 85 °C V µA nA - 250 VDS = -10 V, VGS = - 4.5 V - 50 VDS = -10 V, VGS = - 10 V VGS = - 4.5 V, ID = - 25 mA - 600 mA 8 VGS = - 10 V, ID = - 500 mA 4 VGS = - 10 V, ID = - 500 mA, TJ = 125 °C 6 Ω gfs VDS = - 10 V, ID = - 100 mA 80 mS VSD VDS = - 200 mA, VGS = 0 V 80 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Switchingb Turn-On Time tON Turn-Off Time tOFF 1.7 VDS = - 30 V, VGS = - 15 V, ID ≅ - 500 mA 0.26 nC 0.46 23 VDS = - 25 V, VGS = 0 V, f = 1 MHz 10 pF 5 VDD = - 25 V, RL = 150 Ω, ID ≅ - 200 mA, VGEN = - 10 V, RG = 10 Ω 20 35 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71410 S-81543-Rev. D, 07-Jul-08 Si1021R Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1.0 1200 VGS = 10 V TJ = - 55 °C 7V 8V I D - Drain Current (mA) I D - Drain Current (A) 0.8 6V 0.6 0.4 5V 900 25 °C 125 °C 600 300 0.2 4V 0.0 0 0 1 2 3 4 5 0 2 VDS - Drain-to-Source Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 40 20 32 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) VGS = 0 V VGS = 4.5 V 16 12 VGS = 5 V 8 VGS = 10 V 4 Ciss 24 16 Coss 8 Crss 0 0 0 200 400 600 800 0 1000 5 ID - Drain Current (mA) 10 25 Capacitance 1.8 15 ID = 500 mA 1.5 12 VDS = 48 V 9 6 3 VGS = 10 V at 500 mA 1.2 (Normalized) VDS = 30 V RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 0 0.0 15 VGS = 4.5 V at 25 mA 0.9 0.6 0.3 0.3 0.6 0.9 1.2 Qg - Total Gate Charge (nC) Gate Charge Document Number: 71410 S-81543-Rev. D, 07-Jul-08 1.5 1.8 0.0 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si1021R Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 10 1000 RDS(on) - On-Resistance (Ω) I S - Source Current (A) VGS = 0 V 100 TJ = 125 °C 10 TJ = 25 °C 8 ID = 500 mA 6 4 ID = 200 mA 2 TJ = - 55 °C 0 1 0.00 0.3 0.6 0.9 1.2 0 1.5 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-Source Voltage 0.5 3 0.4 2.5 ID = 250 µA 2 0.2 Power (W) VGS(th) Variance (V) 0.3 0.1 1.5 - 0.0 1 TA = 25 °C - 0.1 0.5 - 0.2 - 0.3 - 50 0 - 25 0 25 50 75 100 125 150 0.1 0.01 10 1 100 600 TJ - Junction Temperature (°C) Time (s) Threshold Voltage Variance Over Temperature Single Pulse Power, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 500 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71410. www.vishay.com 4 Document Number: 71410 S-81543-Rev. D, 07-Jul-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1