Si1330EDL Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 2.5 at VGS = 10 V 0.25 3 at VGS = 4.5 V 0.23 8 at VGS = 3 V 0.05 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • ESD Protected: 2000 V • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • P-Channel Driver - Notebook PC - Servers SOT-323 SC-70 (3-LEADS) G D 1 S D KD XX YY Marking Code 3 Lot Traceability and Date Code 2 G Part # Code Top View Ordering Information: Si1330EDL-T1-E3 (Lead (Pb)-free) Si1330EDL-T1-GE3 (Lead (Pb)-free and Halogen-free) S ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Pulsed Drain Current IS TA = 25 °C TA = 70 °C PD 0.24 0.2 0.19 1.0 0.26 A 0.23 0.31 0.28 0.20 0.18 TJ, Tstg Operating Junction and Storage Temperature Range V 0.25 IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 355 400 380 450 285 340 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. Document Number: 72861 S10-0721-Rev. B, 29-Mar-10 www.vishay.com 1 Si1330EDL Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noteda Limits Parameter Symbol Test Conditions Min. Typ. Max. 2.0 2.5 Unit Static VDS VGS = 0 V, ID = 10 µA 60 VGS(th) VDS = VGS, ID = 250 µA 1 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 10 V Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Drain-Source Breakdown Voltage Gate-Threshold Voltage ±1 VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 55 °C 10 VGS = 10 V, VDS = 7.5 V 0.5 VGS = 4.5 V, VDS = 10 V 0.4 VGS = 3 V, VDS = 10 V 0.05 µA A VGS = 10 V, ID = 0.25 A 1.0 2.5 RDS(on) VGS = 4.5 V, ID = 0.2 A 1.4 3 VGS = 3 V, ID = 0.025 A 3.0 8 Forward Transconductanceb gfs VDS = 10 V, ID = 0.25 A 350 Diode Forward Voltage VSD IS = 0.23 A, VGS = 0 V 0.83 1.2 0.4 0.6 Drain-Source On-Resistanceb V Ω mS V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = 10 V, VGS = 4.5 V ID ≅ 0.25 A VDD = 30 V, RL = 150 Ω ID ≅ 0.2 A, VGEN = 10 V Rg = 10 Ω tr td(off) Turn-Off Time nC Ω 173 td(on) Turn-On Time 0.11 0.15 tf 3.8 10 4.8 15 12.8 20 9.6 15 ns Notes: a. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 1.0 TJ = - 55 °C 6V VGS = 10 V, 7 V 25 °C 0.8 5V I D - Drain Current (A) I D - Drain Current (A) 0.8 0.6 4V 0.4 125 °C 0.6 0.4 0.2 0.2 3V 0 0.0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 5 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 72861 S10-0721-Rev. B, 29-Mar-10 Si1330EDL Vishay Siliconix 4.0 7 3.5 6 VGS - Gate-to-Source Voltage (V) R DS(on) - On-Resistance (Ω) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.0 2.5 VGS = 4.5 V 2.0 1.5 VGS = 10 V 1.0 0.5 0.0 0.0 0.2 0.4 0.6 0.8 VDS = 10 V ID = 250 mA 5 4 3 2 1 0 0.0 1.0 0.1 0.2 0.3 0.4 0.5 0.6 Qg - Total Gate Charge (nC) I D - Drain Current (mA) On-Resistance vs. Drain Current Gate Charge 1000 2.0 VGS = 10 V at 250 mA VGS = 0 V I S - Source Current (A) R DS(on) - On-Resistance (Normalized) 1.6 VGS = 4.5 V at 200 mA 1.2 0.8 100 TJ = 125 °C TJ = 25 °C 10 0.4 TJ = - 55 °C 0.0 - 50 1 - 25 0 25 50 75 100 125 0 150 0.6 0.9 1.2 1.5 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 0.4 5 ID = 200 mA 0.2 4 VGS(th) Variance (V) R DS(on) - On-Resistance (Ω) 0.3 3 2 1 ID = 250 µA 0.0 - 0.2 - 0.4 - 0.6 0 0 2 4 6 8 10 - 0.8 - 50 - 25 0 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) TJ - Temperature (°C) On-Resistance vs. Gate-Source Voltage Threshold Voltage Variance over Temperature Document Number: 72861 S10-0721-Rev. B, 29-Mar-10 www.vishay.com 3 Si1330EDL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 5 IDM Limited Limited by R DS(on)* 4 I D - Drain Current (A) Power (W) 1 3 TA = 25 °C 2 1 ms 0.1 100 ms TA = 25 °C Single Pulse 0.01 1 10 ms ID(on) Limited 1s 10 s, DC BVDSS Limited 0 10 -2 10 -1 1 10 100 Time (s) Single Pulse Power 600 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 380 °C/W 0.02 3. T JM - T A = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4. Surface Mounted 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72861. www.vishay.com 4 Document Number: 72861 S10-0721-Rev. B, 29-Mar-10 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1