Si1024X Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 • Halogen-free Option Available RDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 • TrenchFET® Power MOSFET: 1.8 V Rated 0.85 at VGS = 2.5 V 500 • Very Small Footprint 1.25 at VGS = 1.8 V RoHS COMPLIANT • High-Side Switching 350 • Low On-Resistance: 0.7 Ω • Low Threshold: 0.8 V (typ.) • Fast Switching Speed: 10 ns • 1.8 V Operation • Gate-Source ESD Protected: 2000 V SOT-563 SC-89 S1 1 BENEFITS 6 D1 5 G2 • Ease in Driving Switches 100 G1 2 Marking Code: C • Low-Voltage Operation 100 D2 3 4 • Low Offset (Error) Voltage • High-Speed Circuits S2 • Low Battery Voltage Operation Top View APPLICATIONS Ordering Information: Si1024X-T1-E3 (Lead (Pb)-free) Si1024X-T1-GE3 (Lead (Pb)-free and Halogen-free) • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits • Load/Power Switching Cell Phones, Pagers ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±6 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain TA = 25 °C TA = 85 °C Currentb Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) 515 IS TA = 25 °C TA = 85 °C PD V 485 370 IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID Unit 350 650 450 380 280 250 145 130 mA mW TJ, Tstg - 55 to 150 °C ESD 2000 V Notes: a. Surface Mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71170 S-80643-Rev. C, 24-Mar-08 www.vishay.com 1 Si1024X Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 0.45 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA 0.9 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 4.5 V ± 0.5 ± 1.0 µA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 0.3 100 nA 5 µA On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State VDS = 5 V, VGS = 4.5 V mA 0.41 0.70 VGS = 2.5 V, ID = 500 mA 0.53 0.85 VGS = 1.8 V, ID = 350 mA 0.70 1.25 gfs VDS = 10 V, ID = 400 mA 1.0 VSD IS = 150 mA, VGS = 0 V 0.8 Forward Transconductancea a 700 VGS = 4.5 V, ID = 600 mA RDS(on) Resistancea Diode Forward Voltage VDS = 20 V, VGS = 0 V, TJ = 85 °C Ω S 1.2 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Time td(on) Turn-Off Time td(off) 750 VDS = 10 V, VGS = 4.5 V, ID = 250 mA pC 75 225 VDD = 10 V, RL = 47 Ω ID ≅ 200 mA, VGEN = 4.5 V, RG = 10 Ω 10 ns 36 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1.0 1200 TC = - 55 °C VGS = 5 thru 1.8 V 1000 I D - Drain Current (mA) I D - Drain Current (A) 0.8 0.6 0.4 0.2 25 °C 800 125 °C 600 400 200 1V 0.0 0.0 0.5 1.0 1.5 2.0 V DS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 71170 S-80643-Rev. C, 24-Mar-08 Si1024X Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 100 4.0 80 3.2 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) VGS = 0 V f = 1 MHz 2.4 1.6 VGS = 1.8 V 0.8 Ciss 60 40 Coss 20 VGS = 2.5 V VGS = 4.5 V Crss 0 0.0 0 200 400 600 800 0 1000 4 8 16 20 VDS - Drain-to-Source Voltage (V) I D - Drain Current (mA) On-Resistance vs. Drain Current Capacitance 5 1.60 VDS = 10 V ID = 250 mA 4 1.40 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 12 3 2 1 VGS = 4.5 V ID = 600 mA 1.20 VGS = 1.8 V ID = 350 mA 1.00 0.80 0 0.0 0.2 0.4 0.6 0.60 - 50 0.8 - 25 Q g - Total Gate Charge (nC) 0 25 50 75 100 125 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 1000 5 R DS(on) - On-Resistance (Ω) I S - Source Current (mA) TJ = 125 °C 100 TJ = 25 °C TJ = - 55 °C 10 1 0.0 4 ID = 350 mA 3 ID = 200 mA 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 71170 S-80643-Rev. C, 24-Mar-08 1.4 0 1 2 3 4 5 6 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si1024X Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 3.0 0.3 2.5 ID = 0.25 mA 2.0 0.1 I GSS - (μA) V GS(th) Variance (V) 0.2 0.0 1.5 - 0.1 1.0 - 0.2 0.5 VGS = 4.5 V - 0.3 - 50 - 25 0 25 50 75 100 0.0 - 50 125 - 25 0 50 75 100 125 TJ - Temperature (°C) TJ - Temperature (°C) Threshold Voltage Variance vs. Temperature BVGSS - Gate-to-Source Breakdown Voltage (V) 25 IGSS vs. Temperature 7 6 5 4 3 2 1 0 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (°C) BVGSS vs. Temperature 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 500 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71170. www.vishay.com 4 Document Number: 71170 S-80643-Rev. C, 24-Mar-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1