STB70NFS03L N-channel - 30V - 0.0075Ω - 70A D2PAK STripFET™ Power MOSFET plus schottky rectifier General features Type VDSS RDS(on) ID STB70NFS03L 30V <0.0095Ω 70A Schottky IF(AV) VRRM VF(MAX) 3A 30V 0.51V 3 1 D²PAK Description This product associates a Power MOSFET of the third genaration of STMicroelectronics unique “Single Feature Size” strip-based process and a low drop schottky diode. The transistor shows the best trade-off between on-resistance and gate charge. Used as low side in buck regulators, the product is the solution in terms of conduction losses and space saving. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STB70NFS03L B70NFS03L D²PAK Tape & reel July 2006 Rev 9 1/13 www.st.com 13 Contents STB70NFS03L Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 8 STB70NFS03L 1 Electrical ratings Electrical ratings Table 1. Mosfet absolute maximum ratings Symbol Parameter VDS Drain-source voltage (VGS = 0) VGS Gate- source voltage Value Unit 30 V ± 18 V ID Drain current (continuous) at TC = 25°C 70 A ID Drain current (continuous) at TC = 100°C 50 A Drain current (pulsed) 280 A Total dissipation at TC = 25°C 100 W Derating factor 0.67 W/°C 5.5 V/ns 500 mJ -55 to 175 °C Value Unit IDM (1) PTOT dv/dt (2) Peak diode recovery voltage slope EAS (3) Tstg TJ Single pulse avalanche energy Storage temperature Operating junction temperature 1. Pulse width limited by safe operating area 2. ISD < 70A, di/dt < 350A/µs, VDD = 80% V(BR)DSS 3. Starting Tj = 25°C, VDD = 25V Table 2. Symbol Schottky absolute maximum ratings Parameter VRRM Repetitive peak reverse voltage 30 V IF(RMS) RMS forward current 20 A IF(AV) Average forward current TL=125°C δ=0.5 3 A IFSM Surge non repetitive forward current tp=10ms Sinusoidal 75 A dv/dt Critical rate of rise of reverse voltage 10000 v/µs Value Unit Rthj-amb Thermal resistance junction-amb max 1.5 °C/W Rthj-case Thermal resistance junction-case max 62.5 °C/W 300 °C Table 3. Symbol Tl Thermal data Parameter Maximum lead temperature for soldering purpose 3/13 Electrical characteristics 2 STB70NFS03L Electrical characteristics (Tcase =25°C unless otherwise specified) Table 4. Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 250µA, VGS = 0 IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125°C IGSS Gate-body leakage current (VDS = 0) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on resistance Symbol Parameter Test conditions Unit V 200 20 µA mA ± 100 nA 1 V 0.0075 0.0095 0.0135 0.018 Min. Tj = 25°C VR = 30V Tj = 100°C VR = 30V VF Tj = 25°C IF = 3A Zero gate voltage drain current (VGS = 0) Tj = 125°C IF = 3A Ω Ω Typ. Max. Unit 0.03 0.2 100 mA mA 0.425 0.51 0.46 V V Typ. Max. Unit Dynamic Parameter Test conditions Forward transconductance VDS = 25V, ID = 35A Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge gfs Max. Shottcky static Reverse leakage current Symbol Typ. 30 VGS = 10V, ID = 35A VGS = 5V, ID = 18A IR Table 6. Min. VGS = ± 18V VGS(th) Table 5. 4/13 On /off states Min. 25 S VDS = 25 V, f = 1 MHz, VGS = 0 1440 560 135 pF pF pF VDD = 15V, ID = 70A, VGS = 5V (see Figure 11) 22.5 9 12 30 nC nC nC STB70NFS03L Electrical characteristics Table 7. Switching times Symbol Parameter Test Conditions Min. Typ. Max Unit td(on) tr Turn-on delay time Rise time VDD = 15V, ID = 35A, RG = 4.7Ω, VGS = 5V (see Figure 10) 22 165 ns ns td(off) tf Turn-off delay time Fall time VDD = 15V, ID = 35A, RG = 4.7Ω, VGS = 5V (see Figure 10) 21 25 ns ns Table 8. Source drain diode Symbol Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 70A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 70A, di/dt = 100A/µs VDD = 20V, Tj = 150°C (see Figure 15) trr Qrr IRRM Test Conditions Min. Typ. 42 52 2.5 Max. Unit 70 280 A A 1.3 V ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 5/13 Electrical characteristics STB70NFS03L 2.1 Electrical characteristics (curves) Figure 1. Output characterisics Figure 2. Transfer characteristics Figure 3. Source-drain diode forward characteristics Figure 4. Static drain-source on resistance Figure 5. Gate charge vs gate-source voltage Figure 6. 6/13 Capacitance variations STB70NFS03L Figure 7. Normalized gate threshold voltage vs temperature Figure 9. Normalized BVDSS voltage vs temperature Electrical characteristics Figure 8. Normalized on resistance vs temperature 7/13 Test circuits 3 STB70NFS03L Test circuits Figure 10. Switching times test circuit for resistive load Figure 11. Gate charge test circuit Figure 12. Test circuit for inductive load Figure 13. Unclamped inductive load test switching and diode recovery times circuit Figure 14. Unclamped inductive waveform 8/13 Figure 15. Switching time waveform STB70NFS03L 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/13 Package mechanical data STB70NFS03L D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MAX. MIN. A MIN. 4.4 TYP 4.6 0.173 TYP. 0.181 MAX. A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 D1 E 8 10 10.4 0.393 4.88 5.28 0.192 0.208 E1 G 0.368 0.315 8.5 0.334 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0º 0.015 4º 3 V2 1 10/13 STB70NFS03L 5 Packaging mechanical data Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 11/13 Revision history 6 STB70NFS03L Revision history Table 9. 12/13 Revision history Date Revision Changes 09-Sep-2004 8 New datasheet according to PCN DSG/CT/2C13 marking: STB70NFS03l@ 05-Jul-2006 9 New template, new value on Table 4.: On /off states STB70NFS03L Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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