STGP3NB60HD - STGP3NB60HDFP STGB3NB60HD N-CHANNEL 3A - 600V - TO-220/TO-220FP/D2PAK PowerMESH™ IGBT TYPE VCES VCE(sat) (Max) @25°C IC(#) @100°C STGB3NB60HD STGP3NB60HD STGP3NB60HDFP 600 V 600 V 600 V < 2.8 V < 2.8 V < 2.8 V 6A 6A 6A ■ ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW GATE CHARGE HIGH FREQUENCY OPERATION HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE 3 1 3 2 1 TO-220 2 TO-220FP 3 1 D2PAK INTERNAL SCHEMATIC DIAGRAM DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized for high frequency applications (up to 50kHz)in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS ■ SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES ■ ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STGB3NB60HDT4 GB3NB60HD D2PAK TAPE & REEL STGP3NB60HD GP3NB60HD TO-220 TUBE STGP3NB60HDFP GP3NB60HDFP TO-220FP TUBE September 2003 1/12 STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STGP3NB60HD STGB3NB60HD Unit STGP3NB60HDFP VCES Collector-Emitter Voltage (VGS = 0) 600 V VGE Gate-Emitter Voltage ± 20 V IC Collector Current (continuous) at TC = 25°C (#) 10 A IC Collector Current (continuous) at TC = 100°C (#) 6 A Collector Current (pulsed) 24 A ICM () PTOT Tstg Tj Total Dissipation at TC = 25°C 50 25 W Derating Factor 0.4 0.2 W/°C Storage Temperature –55 to 150 Operating Junction Temperature °C () Pulse width limited by safe operating area THERMAL DATA TO-220/D2PAK Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max TO-220FP 2.5 5 °C/W 62.5 °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) ICES IGES Parameter Test Conditions Min. Typ. Max. Collector-Emitter Breakdown Voltage IC = 250 µA, VGE = 0 Collector cut-off (VGE = 0) VCE = Max Rating, TC = 25 °C 50 µA VCE = Max Rating, TC = 125 °C 100 µA VGE = ±20V , VCE = 0 ±100 nA Max. Unit 5 V 2.8 V Gate-Emitter Leakage Current (VCE = 0) 600 Unit V ON (1) Symbol Parameter VGE(th) Gate Threshold Voltage VCE(sat) Collector-Emitter Saturation Voltage (#) Calculated according to the iterative formula: T JMAX – T C I C ( T C ) = -------------------------------------------------------------------------------------R THJ – C × VCESAT ( MAX )(T C, I C) 2/12 Test Conditions VCE = VGE, IC = 250µA Min. Typ. 3 VGE = 15V, IC = 3 A 2.4 VGE = 15V, IC = 3 A, Tj =125°C 1.9 V STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC Symbol gfs Parameter Forward Transconductance Test Conditions Min. VCE = 25 V , IC =3 A Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 25V, f = 1 MHz, VGE = 0 Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 480V, IC = 3 A, VGE = 15V ICL Latching Current Vclamp = 480 V , Tj = 125°C RG = 10 Ω Typ. Max. Unit 2.4 S 235 33 6.6 pF pF pF 21 6 7.6 27 12 nC nC nC A SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Test Conditions Turn-on Delay Time Rise Time VCC = 480 V, IC = 3 A RG = 10Ω , VGE = 15 V Turn-on Current Slope Turn-on Switching Losses VCC= 480 V, IC = 3 A RG=10Ω VGE = 15 V,Tj = 125°C Min. Typ. Max. Unit 5 11 ns ns 400 77 A/µs µJ SWITCHING OFF Symbol tc Parameter Cross-over Time Unit ns 53 ns Fall Time 77 ns Turn-off Switching Loss 33 µJ Total Switching Loss 110 µJ 180 ns 82 ns Delay Time tc Max. 36 Off Voltage Rise Time Ets Vcc = 480 V, IC =3 A, RGE = 10 Ω , VGE = 15 V Typ. ns td(off) Eoff(**) Min. 76 tr(Voff) tf Test Conditions Cross-over Time Vcc = 480 V, IC = 3 A, RGE = 10 Ω , VGE = 15 V Tj = 125 °C tr(Voff) Off Voltage Rise Time td(off) Delay Time 58 ns Fall Time 110 ns Turn-off Switching Loss 88 µJ Total Switching Loss 165 µJ tf Eoff(**) Ets Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) COLLECTOR-EMITTER DIODE Symbol Parameter Test Conditions Min. Typ. Ifm Forward Current Forward Current pulsed Vf Forward On-Voltage If = 3 A If = 3 A, Tj = 125 °C 1.6 1.4 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 3 A ,VR = 35 V, Tj =125°C, di/dt = 100 A/µs 45 70 2.7 If trr Qrr Irrm Max. Unit 3 24 A A 2.0 V V ns nC A 3/12 STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD Thermal Impedance for TO-220/D2PAK Thermal Impedance for TO-220FP Output Characteristics Transfer Characteristics Transconductance Collector-Emitter On Voltage vs Temperature 4/12 STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD Collector-Emitter On Voltage vs Collettor Current Gate Threshold vs Temperature Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance 5/12 STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD Total Switching Losses vs Temperature Emitter-collector Diode Characteristics Total Switching Losses vs Collector Current Switching Off Safe Operating Area 6/12 STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching 7/12 STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD TO-220 MECHANICAL DATA DIM. 8/12 mm. MIN. TYP inch MAX. MIN. 4.60 0.173 TYP. MAX. A 4.40 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 L30 28.90 0.645 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 L2 0.409 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 2 3 L4 9/12 STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 4º 3 V2 0.4 10/12 1 STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 MIN. 330 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. MAX. 12.992 0.059 13.2 0.504 0.520 0795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 R 50 1.574 T 0.25 0.35 0.0098 0.0137 0.075 0.082 * on sales type 11/12 STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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