STGB3NB60SD N-CHANNEL 3A - 600V D2PAK Power MESH™ IGBT TYPE STGB3NB60SD ■ ■ ■ ■ ■ ■ VCES VCE(sat) Ic 600 V <1.5 V 3A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT INTEGRATED FREEWHEELING DIODE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4”) 3 1 D2PAK TO-263 (suffix“T4”) DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix “S” identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz). INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ GAS DISCHARGE LAMP ■ STATIC RELAYS ■ MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol VCES VGE IC IC Value Unit Collector-Emitter Voltage (VGS = 0) Parameter 600 V Gate-Emitter Voltage ± 20 V 6 A Collector Current (continuos) at Tc=25°C Collector Current (continuos)at Tc=100°C 3 A Collector Current (pulsed) 25 A Ptot Total Dissipation at Tc = 25°C 70 W Tstg Storage Temperature ICM(•) Derating Factor Tj Max. Operating Junction Temperature 0.46 W/°C –60 to 175 °C 175 °C (•)Pulse width limited by safe operating area. November 2000 1/8 STGB3NB60SD THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Rthc-sink Max 2.14 °C/W Thermal Resistance Junction-ambient Max 62.5 °C/W Thermal Resistance Case-sink Typ 0.5 °C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Typ. Max. 600 Unit Collector-Emitter Breakdown Voltage ID = 250 µA ICES Collector cut-off (VGE = 0) VCE = Max Rating Tj = 25 °C VCE = Max Rating Tj = 125 °C 10 100 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±100 nA Max. Unit 5 V VBR(CES) VGE = 0 Min. V VCE = 0 ON (*) Symbol VGE(th) VCE(SAT) Parameter Test Conditions Gate Threshold Voltage VCE = VGE Collector-Emitter Saturation Voltage IC = 1.5 A VGE = 15 V IC = 3 A VGE = 15 V VGE = 15 V ID = 3 A Tj = 125 °C IC = 250 µA Min. Typ. 2.5 1 1.2 1.1 1.5 V V V DYNAMIC Symbol Parameter Test Conditions gfs Forward Transconductance VCE = 25 V IC = 3 A Cies Input Capacitance VCE = 25V f = 1 MHz VGE = 0 Coes Min. Typ. 1.7 2.5 Max. Unit S 255 330 pF Output Capacitance 30 40 pF Cres Reverse Transfer Capacitances 5.6 7 pF QG Total Gate Charge QGE QGC ICL 18 nC Gate-Emitter Charge 5.4 nC Gate-Collector Charge 5.5 nC Latching Current VCE=480V IC=3 A VGE=15 V Vclamp = 480 V Tj=150 °C RG = 1 KΩ 12 A SWITCHING ON Symbol td(on) tr (di/dt)on Eon 2/8 Parameter Test Conditions Min. Typ. Max. Unit DelayTime Rise Time VCC = 480 V VGE = 15 V IC = 3 A RG = 1 kΩ 125 150 ns ns Turn-on Current Slope Turn-on Switching Losses VCC = 480 V VGE = 15 V Tj=125 °C IC = 3 A RG = 1 kΩ 50 1100 A/µs µJ STGB3NB60SD ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tc tr(Voff) td(Voff) tf Eoff(**) Cross-Over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss VCC = 480 V RGE = 1 kΩ IC = 3 A VGE = 15 V 1.8 1.0 3.4 0.72 1.15 µs µs µs µs mJ tc tr(Voff) td(Voff) tf Eoff(**) Cross-Over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss VCC = 480 V RGE = 1 kΩ Tj = 125 °C IC = 3 A VGE = 15 V 2.8 1.45 3.6 1.2 1.8 µs µs µs µs mJ COLLECTOR-EMITTER DIODE Symbol Parameter If Ifm Forward Current Forward Current pulsed Vf Forward On-Voltage trr Qrr Irrm Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions Typ. 1.55 1.15 If = 3 A If = 1 A If = 3 A di/dt = 100 A/µs Min. VR = 200 V Tj = 125 °C 1700 4500 9.5 Max. Unit 3 25 A A 1.9 V V ns nC A (•)Pulse width limited by max. junction temperature (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (∗∗)Losses Include Also The Tail (Jedec Standardization) Thermal Impedance 3/8 STGB3NB60SD Output Characteristics Transfer Characteristics Transconductance Collector-Emitter on Voltage vs Temperature Collector-Emiter on Voltage vs Collector Current Gate Threshold vs Temperature 4/8 STGB3NB60SD Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate charge Gate-Emitter Voltage Off Switching Losses vs Ic Off Switching Losses vs Tj Swittching Off Safe Operating Area 5/8 STGB3NB60SD Diode Forward vs Tj Diode Forward Voltage Fig. 1: Gate Charge test Circuit Fig. 2 Test Circuit For Inductive Load Switching Fig. 3: Switching Waveforms 6/8 STGB3NB60SD D2PAK MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. A 4.4 4.6 0.173 TYP. 0.181 MAX. A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 D1 E 8 10 0.368 0.315 10.4 0.393 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 E1 G 8.5 R V2 0.334 0.4 0º 0.015 8º 7/8 STGB3NB60SD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics © 2000 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8