STGW50NB60H ® N-CHANNEL 50A - 600V TO-247 PowerMESH IGBT PRELIMINARY DATA TYPE STGW50NB60H ■ ■ ■ ■ ■ ■ V CES V CE(sat) IC 600 V < 2.8 V 50 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT 1 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz). 2 3 TO-247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH FREQUENCY MOTOR CONTROLS ■ WELDING EQUIPMENTS ■ SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CES Collector-Emitter Voltage (V GS = 0) Parameter 600 V V ECR Emitter-Collector Voltage 20 V V GE Gate-Emitter Voltage ± 20 V 100 A 50 A 400 A 250 W 2 W/ o C o IC Collector Current (continuous) at T c = 25 C IC Collector Current (continuous) at T c = 100 o C ICM (•) P tot Collector Current (pulsed) o Total Dissipation at T c = 25 C Derating Factor T stg Tj Storage Temperature Max. Operating Junction Temperature -65 to 150 o C 150 o C (•) Pulse width limited by safe operating area June 1999 1/5 STGW50NB60H THERMAL DATA R thj-case R thj-amb R thc-h Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-heatsink o 0.5 30 0.1 Max Max Typ C/W oC/W o C/W ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF Symbol Parameter Test Conditions Collector-Emitter Breakdown Voltage I C = 250 µA I CES Collector cut-off (V GE = 0) V CE = Max Rating V CE = Max Rating IGES Gate-Emitter Leakage Current (V CE = 0) V GE = ± 20 V V BR(CES) Min. V GE = 0 Typ. Max. 600 Unit V 10 100 µA µA ± 100 nA Max. Unit 5 V 2.3 1.9 2.8 V V Typ. Max. Unit T j = 25 o C T j = 125 o C V CE = 0 ON (∗) Symbol V GE(th) V CE(SAT) Parameter Test Conditions Gate Threshold Voltage V CE = V GE I C = 250 µA Collector-Emitter Saturation Voltage V GE = 15 V V GE = 15 V I C = 50 A I C = 50 A Min. Typ. 3 T j = 125 o C DYNAMIC Symbol gf s Parameter Test Conditions Forward Transconductance V CE =25 V C ies C oes C res Input Capacitance Output Capacitance Reverse Transfer Capacitance V CE = 25 V QG Q GE Q GC Total Gate Charge Gate-Emitter Charge Gate-Collector Charge V CE = 480 V Latching Current V clamp = 480 V V GE = 15 V I CL Min. I C = 50 A f = 1 MHz I C = 50 A V GE = 0 V GE = 15 V R G =10 Ω T j = 150 o C 22 S 4500 450 90 pF pF pF 260 28 115 nC nC nC 200 A SWITCHING ON Symbol t d(on) tr (di/dt) on E on 2/5 Parameter Test Conditions Min. Typ. Max. Unit Delay Time Rise Time V CC = 480 V V GE = 15 V I C = 50 A R G = 10Ω 30 90 ns ns Turn-on Current Slope V CC = 480 V R G = 10 Ω T j = 125 o C I C = 50 A V GE = 15 V 350 A/µs 600 µJ Turn-on Switching Losses STGW50NB60H ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tc t r (v off ) td (of f ) tf E off (**) Ets V CC = 480 V Cross-Over Time Off Voltage Rise Time R GE = 10 Ω Delay Time Fall Time Turn-off Switching Loss Total Switching Loss I C = 50 A V GE = 15 V 166 48 326 90 2.1 2.7 ns ns ns ns mJ mJ tc t r (v off ) td (of f ) tf E off (**) Ets VCC = 480 V Cross-Over Time Off Voltage Rise Time R GE = 10 Ω Delay Time T j = 125 o C Fall Time Turn-off Switching Loss Total Switching Loss I C = 50 A V GE = 15 V 270 75 340 200 2.9 3.5 ns ns ns ns mJ mJ (•) Pulse width limited by max. junction temperature (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (**)Losses Include Also The Tail (Jedec Standardization) 3/5 STGW50NB60H TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.582 L4 34.6 1.362 L5 5.5 0.217 M 2 3 0.079 0.118 P025P 4/5 STGW50NB60H Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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