STMICROELECTRONICS STGW35NB60SD

STGW35NB60SD
N-CHANNEL 35A - 600V - TO-247
Low Drop PowerMESH™ IGBT
General features
Type
VCES
VCE(sat)
(Max)@ 25°C
IC
@100°C
STGW35NB60SD
600V
< 1.7V
35A
■
LOW ON-VOLTAGE DROP (VCEsat)
■
LOW INPUT CAPACITANCE
■
HIGH CURRENT CAPABILITY
3
2
1
TO-247
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™
IGBTs,
with
outstanding
performances.
Internal schematic diagram
Applications
■
LIGHT DIMMER
■
HID
■
WELDING
■
MOTOR CONTROL
■
STATIC RELAYS
Order codes
Sales Type
Marking
Package
Packaging
STGW35NB60SD
GW35NB60SD
TO-247
TUBE
November 2005
Rev 1
1/13
www.st.com
13
STGW35NB60SD
1 Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Value
Unit
Collector-Emitter Voltage (VGS = 0)
600
V
IC Note 4
Collector Current (continuous) at 25°C
70
A
IC Note 4
Collector Current (continuous) at 100°C
35
A
Collector Current (pulsed)
250
A
Gate-Emitter Voltage
± 20
V
Diode RMS Forward Current at TC = 25°C
30
A
Total Dissipation at TC = 25°C
200
W
– 55 to 150
°C
300
°C
VCES
ICM Note 1
VGE
If
PTOT
Tj
Parameter
Operating Junction Temperature
Tstg
Storage Temperature
TL
Maximum Lead Temperature for Soldering
Purpose (1.6mm from case, for 10sec.)
Table 2.
Thermal resistance
Min.
Typ.
Max.
Unit
Rthj-case
Thermal Resistance Junction-case (IGBT)
--
--
0.625
°C/W
Rthj-case
Thermal Resistance Junction-case (DIODE)
--
--
1.5
°C/W
Rthj-amb
Thermal Resistance Junction-ambient
--
--
50
°C/W
2/13
STGW35NB60SD
2
2 Electrical characteristics
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 3.
Static
Symbol
Parameter
Test Conditions
VBR(CES)
Collectro-Emitter Breakdown
Voltage
VCE(SAT)
Collector-Emitter Saturation
Voltage
VGE= 15V, IC= 20A, Tj= 125°C
Gate Threshold Voltage
VCE= VGE, IC= 250µA
ICES
Collector-Emitter Leakage
Current (VGE = 0)
VCE = Max Rating,Tc=25°C
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 20V , VCE = 0
Forward Transconductance
VCE = 10V, IC= 18A
VGE(th)
gfs
Table 4.
Symbol
C ies
C oes
Cres
Qg
Typ.
Max.
600
VGE= 15V, IC= 20A, Tj= 25°C
Unit
V
1.25
1.2
2.5
VCE = Max Rating, Tc=125°C
1.7
V
V
5
V
10
100
µA
µA
± 100
nA
20
S
Dynamic
Parameter
Test Conditions
Min.
Qgc
ICL
Turn-Off SOA Minimum
Current
VCE = 480V, IC = 20A,
83
10
27
VGE = 15V,
(see Figure 17)
Vclamp = 480V , Tj = 125°C
RG = 100Ω
Typ.
Max.
80
Unit
pF
pF
pF
1820
167
27
Input Capacitance
VCE = 25V, f = 1 MHz, VGE = 0
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Qge
IC = 1mA, V GE = 0
Min.
115
nC
nC
nC
A
3/13
STGW35NB60SD
2 Electrical characteristics
Table 5.
Symbol
td(on)
tr
(di/dt)on
td(on)
tr
(di/dt)on
tr(Voff)
td(off)
tf
tr(Voff)
td(off)
tf
Table 6.
Switching on/off (inductive load)
Parameter
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
Test Conditions
VCC = 480V, IC = 20A
RG= 100Ω, VGE= 15V, Tj= 25°C
(see Figure 3)
VCC = 480V, IC = 20A
RG= 100Ω, VGE= 15V, Tj= 125°C
(see Figure 3)
Vcc = 480V, IC = 20A,
RGE = 100Ω , VGE = 5V,T J=25°C
(see Figure 18)
Vcc = 480V, IC = 20A,
RGE=100Ω,VGE =15V, Tj=125°C
(see Figure 18)
Parameter
Eon Note 2
Turn-on Switching Losses
Turn-off Switching Losses
Total Switching Losses
VCC = 480V, IC = 20A
Turn-on Switching Losses
Turn-off Switching Losses
Total Switching Losses
VCC = 480V, IC = 20A
Ets
Eon Note 2
Eoff Note 3
Ets
4/13
Typ.
Max.
Unit
92
70
340
ns
ns
A/µs
80
73
320
ns
ns
A/µs
0.78
1.1
0.79
µs
µs
µs
1.1
2.4
1.2
µs
µs
µs
Switching energy (inductive load)
Symbol
Eoff Note 3
Min.
Test Conditions
RG=100Ω, VGE= 15V, Tj= 25°C
(see Figure 18)
RG=100Ω, VGE= 15V, Tj= 125°C
(see Figure 18)
Min.
Typ.
Max.
Unit
0.84
7.4
8.24
mJ
mJ
mJ
0.86
11.5
12.4
mJ
mJ
mJ
STGW35NB60SD
Table 7.
Symbol
2 Electrical characteristics
Collector-emitter diode
Parameter
Vf
Forward On-Voltage
trr
Reverse Recovery Time
ta
S
Reverse Recovery Charge
Reverse Recovery Current
Softness factor of the diode
trr
Reverse Recovery Time
Qrr
Irrm
ta
Qrr
Irrm
S
Reverse Recovery Charge
Reverse Recovery Current
Softness factor of the diode
Test Conditions
If = 10A
If = 10A, Tj = 125°C
If = 20A, VR = 40V,
Tj = 25°C, di/dt = 100A/µs
(see Figure 19)
If = 20A, VR = 40V,
Tj = 125°C, di/dt = 100A/µs
(see Figure 19)
Min.
Typ.
Max.
Unit
1.3
1
2
V
V
44
32
66
3
0.375
ns
ns
nC
A
88
56
237
5.4
0.57
ns
ns
nC
A
(1)Pulse width limited by max. junction temperature
(2) Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the
IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
(3) Turn-off losses include also the tail of the collector current
(4) Calculated according to the iterative formula:
T
–T
JMAX
C
I ( T ) = -------------------------------------------------------------------------------------------------C C
R
×V
(T , I )
THJ – C
CESAT ( MAX ) C C
5/13
STGW35NB60SD
2 Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 1.
Output Characteristics
Figure 2.
Transfer Characteristics
Figure 3.
Transconductance
Figure 4.
Normalized Collector-Emitter On
Voltage vs Temperature
Figure 5.
Collector-Emitter on Voltage vs
Collector Current
Figure 6.
Gate Threshold vs Temperature
6/13
STGW35NB60SD
2 Electrical characteristics
Figure 7.
Normalized Breakdown Voltage vs
Temperature
Figure 8.
Figure 9.
Capacitance Variations
Figure 10. Switching Losses vs Gate Charge
Figure 11. Switching Losses vs Temperature
Gate Charge vs Gate-Emitter
Voltage
Figure 12. Switching Losses vs Collector
Current
7/13
STGW35NB60SD
2 Electrical characteristics
Figure 13. Thermal Impedance
Figure 15. Emitter-Collector Diode
Characteristics
8/13
Figure 14. Turn-Off SOA
STGW35NB60SD
3
3 Test Circuits
Test Circuits
Figure 16. Test Circuit for Inductive Load
Switching
Figure 17. Gate Charge Test Circuit
Figure 18. Switching Waveform
Figure 19. Diode Recovery Time Waveform
9/13
4 Package mechanical data
4
STGW35NB60SD
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
10/13
STGW35NB60SD
4 Package mechanical data
TO-247 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
0.134
b2
3.0
3.40
0.118
c
0.40
0.80
0.015
0.03
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
e
5.45
L
14.20
14.80
0.560
L1
3.70
4.30
0.14
L2
0.620
0.214
18.50
0.582
0.17
0.728
øP
3.55
3.65
0.140
0.143
øR
4.50
5.50
0.177
0.216
S
5.50
0.216
11/13
STGW35NB60SD
5 Revision History
5
12/13
Revision History
Date
Revision
16-Nov-2005
1
Changes
Initial release.
STGW35NB60SD
5 Revision History
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
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13/13