STMICROELECTRONICS STPS60150CT

STPS60150C
®
POWER SCHOTTKY RECTIFIER
Table 1: Main Product Characteristics
IF(AV)
2 x 30 A
VRRM
150 V
Tj
175°C
VF(max)
0.76 V
A1
K
A2
K
FEATURES AND BENEFITS
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■
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■
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High junction temperature capabiliy
Low leakage current
Low thermal resistance
High frequency operation
Avalanche specification
A2
A1
K
TO-220AB
STPS60150CT
DESCRIPTION
Dual center tab Schottky rectifier suited for High
Frequency server and telecom base station
SMPS. Packaged in TO-220AB, this device combines high current rating and low volume to enhance both reliability and power density of the
application.
Table 2: Order Codes
Part Number
STPS60150CT
Marking
STPS60150CT
Table 3: Absolute Ratings (limiting values, per diode)
Symbol
VRRM
IF(RMS)
Value
Unit
Repetitive peak reverse voltage
Parameter
150
V
RMS forward voltage
60
A
Per diode
Per device
30
60
A
IF(AV)
Average forward current
IFSM
Surge non repetitive forward current
tp = 10ms sinusoidal
270
A
PARM
Repetitive peak avalanche power
tp = 1µs Tj = 25°C
17300
W
-65 to + 175
°C
175
°C
10000
V/µs
Tstg
Tj
dV/dt
Tc = 150°C
δ = 0.5
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
1
dPtot
* : --------------- > -------------------------- thermal runaway condition for a diode on its own heatsink
dTj
Rth ( j – a )
October 2004
REV. 1
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STPS60150C
Table 4: Thermal Parameters
Symbol
Parameter
Rth(j-c)
Junction to case
Rth(c)
Coupling
Per diode
Total
Value
Unit
1.0
0.7
°C/W
0.4
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 5: Static Electrical Characteristics (per diode)
Symbol
IR *
Parameter
Tests conditions
Reverse leakage current Tj = 25°C
Min.
VR = VRRM
Tj = 125°C
VF **
Pulse test:
Forward voltage drop
Max.
Unit
3
15
µA
3
10
mA
0.94
V
Tj = 25°C
IF = 30A
Tj = 125°C
IF = 30A
0.72
0.76
Tj = 25°C
IF = 60A
0.97
1.05
Tj = 125°C
IF = 60A
0.86
0.92
* tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
2
To evaluate the conduction losses use the following equation: P = 0.6 x IF(AV) + 0.0053 IF (RMS)
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Typ
STPS60150C
Figure 1: Average forward power dissipation
versus average forward current (per diode)
Figure 2: Average forward current versus
ambient temperature (δ = 0.5, per diode)
IF(AV)(A)
PF(AV)(W)
30
35
δ = 0.5
δ = 0.2
δ = 0.1
25
Rth(j-a)=Rth(j-c)
30
δ = 0.05
20
25
δ=1
20
15
15
Rth(j-a)=15°C/W
10
10
T
T
5
5
IF(AV)(A)
δ=tp/T
0
0
5
10
15
20
25
tp
Tamb(°C)
0
30
Figure 3: Normalized avalanche
derating versus pulse duration
δ=tp/T
tp
35
power
0
50
75
100
125
150
Figure 4: Normalized avalanche
derating versus junction temperature
PARM(tp)
PARM(1µs)
1
25
1.2
175
power
PARM(tp)
PARM(25°C)
1
0.1
0.8
0.6
0.4
0.01
0.2
Tj(°C)
tp(µs)
0.001
0.01
0.1
1
0
10
100
0
1000
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode)
25
50
75
100
125
150
Figure 6: Relative variation of thermal
impedance junction to case versus pulse
duration (per diode)
IM(A)
Zth(j-c)/Rth(j-c)
350
1.0
0.9
300
0.8
250
0.7
0.6
200
TC=50°C
150
TC=75°C
0.5
0.4
0.3
100
TC=125°C
IM
0.2
50
t
0.1
t(s)
δ=0.5
tp(s)
0.0
0
1.E-03
Single pulse
1.E-02
1.E-01
1.E+00
1.E-03
1.E-02
1.E-01
1.E+00
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STPS60150C
Figure 7: Reverse leakage current versus
reverse voltage applied (typical values, per
diode)
Figure 8: Junction capacitance versus reverse
voltage applied (typical values, per diode)
IR(µA)
C(pF)
1.E+05
10000
F=1MHz
VOSC=30mVRMS
Tj=25°C
Tj=150°C
1.E+04
Tj=125°C
1.E+03
Tj=100°C
1000
1.E+02
Tj=75°C
1.E+01
Tj=50°C
1.E+00
Tj=25°C
VR(V)
VR(V)
100
1.E-01
0
25
50
75
100
125
150
Figure 9: Forward voltage drop versus forward
current (per diode)
IFM(A)
100.0
Tj=125°C
(maximum values)
Tj=125°C
(typical values)
10.0
Tj=25°C
(maximum values)
1.0
VFM(V)
0.1
0.0
4/6
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1
10
100
1000
STPS60150C
Figure 10: TO-220AB Package Mechanical Data
REF.
A
H2
Dia
C
L5
L7
L6
L2
F2
F1
D
L9
L4
F
M
G1
E
G
A
C
D
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
M
Diam.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
4.40
4.60
0.173
0.181
1.23
1.32
0.048
0.051
2.40
2.72
0.094
0.107
0.49
0.70
0.019
0.027
0.61
0.88
0.024
0.034
1.14
1.70
0.044
0.066
1.14
1.70
0.044
0.066
4.95
5.15
0.194
0.202
2.40
2.70
0.094
0.106
10
10.40
0.393
0.409
16.4 typ.
0.645 typ.
13
14
0.511
0.551
2.65
2.95
0.104
0.116
15.25
15.75
0.600
0.620
6.20
6.60
0.244
0.259
3.50
3.93
0.137
0.154
2.6 typ.
0.102 typ.
3.75
3.85
0.147
0.151
Table 6: Ordering Information
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Ordering type
Marking
Package
Weight
Base qty
Delivery
mode
STPS60150CT
STPS60150CT
TO-220AB
2.20 g
50
Tube
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.8 m.N.
Maximum torque value: 1.0 m.N.
Table 7: Revision History
Date
Revision
19-Oct-2004
1
Description of Changes
First issue.
5/6
STPS60150C
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2004 STMicroelectronics - All rights reserved
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DataSheet 4 U .com