STPS1L20M ® LOW DROP POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF(AV) 1A VRRM 20 V Tj (max) 150°C VF(max) 0.37 V A C FEATURES AND BENEFITS ■ ■ ■ ■ ■ ■ Very small conduction losses Negligible switching losses Extremely fast switching Low forward voltage drop for higher efficiency and extented battery life Low thermal resistance Avalanche capability specified DESCRIPTION STmite (DO216-AA) Table 2: Order Code Part Number STPS1L20M Marking 1L2 Single Schottky rectifier suited for switch mode power supplies and high frequency DC to DC converters. Packaged in STmite, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. Due to the small size of the package this device fits battery powered equipment (cellular, notebook, PDA’s, printers) as well chargers and PCMCIA cards. Table 3: Absolute Ratings (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward voltage Value 20 Unit V 2 A IF(AV) Average forward current Tc = 140°C δ = 0.5 1 A IFSM Surge non repetitive forward current 10 ms sinusoidal 50 A PARM Repetitive peak avalanche power tp = 1µs Tj = 25°C Tstg Tj dV/dt Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage (rated VR, Tj = 25°C) 1400 W -65 to + 150 °C 150 °C 10000 V/µs 1 dPtot * : --------------- > -------------------------- thermal runaway condition for a diode on its own heatsink dTj Rth ( j – a ) September 2004 REV. 3 1/6 STPS1L20M Table 4: Thermal Resistance Symbol Parameter Value Unit Rth(j-c)* Junction to case 20 °C/W Rth(j-l)* 250 °C/W Junction to ambient * Mounted with minimum recommended pad size, PC board FR4. Table 5: Static Electrical Characteristics Symbol Parameter Tests conditions Tj = 25°C VR = VRRM Tj = 85°C IR * Reverse leakage current Min. Tj = 25°C VR = 10V Tj = 85°C Tj = 25°C VR = 5V Tj = 85°C Tj = 25°C VF * IF = 1A Tj = 85°C Forward voltage drop Tj = 25°C IF = 3A Tj = 85°C Typ Max. Unit 0.015 0.075 0.9 4.5 0.005 0.035 0.45 2.5 0.003 0.025 0.3 1.6 0.38 0.43 0.32 0.37 0.46 0.53 0.42 0.49 mA V * tp = 380 µs, δ < 2% Pulse test: 2 To evaluate the conduction losses use the following equation: P = 0.34 x IF(AV) + 0.07 IF (RMS) Figure 1: Conduction losses versus average current Figure 2: Average forward current versus ambient temperature (δ = 0.5) PF(AV)(W) IF(AV)(A) 0.50 δ = 0.1 0.45 δ = 0.2 1.1 δ = 0.5 Rth(j-a)=Rth(j-c) 1.0 δ = 0.05 0.40 0.9 δ=1 0.35 0.8 0.7 0.30 0.6 Rth(j-a)=270°C/W 0.25 0.5 0.20 0.4 0.15 0.2 0.05 IF(AV)(A) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.1 δ=tp/T 0.00 2/6 0.3 T 0.10 0.8 0.9 1.0 Tamb(°C) tp 0.0 1.1 1.2 0 25 50 75 100 125 150 STPS1L20M Figure 3: Normalized avalanche derating versus pulse duration power Figure 4: Normalized avalanche derating versus junction temperature PARM(tp) PARM(1µs) power PARM(tp) PARM(25°C) 1 1.2 1 0.1 0.8 0.6 0.4 0.01 0.2 Tj(°C) tp(µs) 0.001 0.01 0.1 1 0 10 100 25 1000 Figure 5: Non repetitive surge peak forward current versus overload duration (maximum values) 50 75 100 125 150 Figure 6: Relative variation of thermal impedance junction to ambient versus pulse duration IM(A) Zth(j-c)/Rth(j-c) 25 1.0 0.9 20 0.8 0.7 0.6 15 TC=25°C δ = 0.5 0.5 TC=75°C 10 0.4 0.3 5 TC=125°C 0.2 IM t 0.1 t(s) δ=0.5 0 1.E-03 1.E-02 1.E-01 1.E+00 Figure 7: Reverse leakage current versus reverse voltage applied (typical values) δ = 0.2 T δ = 0.1 Single pulse tp(s) 0.0 1.E-04 1.E-03 δ=tp/T 1.E-02 tp 1.E-01 Figure 8: Reverse leakage current versus junction temperature (typical values) IR(mA) IR(mA) 1.E+02 1.E+02 Tj=150°C VR=20V Tj=125°C 1.E+01 1.E+01 Tj=100°C 1.E+00 1.E+00 Tj=75°C 1.E-01 1.E-01 Tj=50°C 1.E-02 1.E-02 Tj=25°C VR(V) Tj(°C) 1.E-03 1.E-03 0 2 4 6 8 10 12 14 16 18 20 0 25 50 75 100 125 150 3/6 STPS1L20M Figure 9: Junction capacitance versus reverse voltage applied (typical values) Figure 10: Forward voltage drop versus forward current IFM(A) C(pF) 2.0 1000 F=1MHz VOSC=30mVRMS Tj=25°C 1.8 Tj=85°C (maximum values) 1.6 1.4 Tj=85°C (typical values) 1.2 1.0 100 0.8 0.6 0.4 0.2 VR(V) 10 1 10 100 Figure 11: Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board FR4, Cu = 35µm, typical values) Rth(j-a)(°C/W) 250 200 150 100 50 S(mm²) 0 0 4/6 20 40 60 80 100 120 140 160 180 200 0.0 0.00 Tj=25°C (maximum values) VFM(V) 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 STPS1L20M Figure 12: STmite Package Mechanical Data DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. A 0.85 1.00 1.15 0.033 0.039 A1 -0.05 0.05 -0.002 b 0.40 0.65 0.016 b2 0.70 1.00 0.027 c 0.10 0.25 0.004 D 1.75 1.90 2.05 0.069 0.007 E 1.75 1.90 2.05 0.069 0.007 H 3.60 3.75 3.90 0.142 0.148 L 0.50 0.63 0.80 0.020 0.025 L2 1.20 1.35 1.50 0.047 0.053 L3 0.50 0.019 ref ref R 0.07 0.003 R1 0.07 0.003 L3 D b2 b H L2 L E R C A A1 0° to 6° R1 Max. 0.045 0.002 0.025 0.039 0.010 0.081 0.081 0.154 0.031 0.059 Figure 13: Foot Print Dimensions (in millimeters) 1.82 1.38 2.03 0.75 1.10 0.50 0.71 Table 6: Ordering Information Ordering type STPS1L20M Marking 1L2 Package STmite Weight 15.5 mg Base qty 12000 Delivery mode Tape & reel Table 7: Revision History Date Revision Jul-2003 2A 13-Sep-2004 3 Description of Changes Last update. STmite package dimensions reference A1 change: from blank (min) to -0.05mm and from 0.10 (max) to 0.05mm. 5/6 STPS1L20M Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. 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