STMICROELECTRONICS STPS640C

STPS640C
Power Schottky rectifier
Main product characteristics
A1
K
IF(AV)
2x3A
VRRM
40 V
Tj (max)
150° C
VF(max)
0.57 V
A2
K
A2
Features and benefits
■
Very small conduction losses
■
Negligible switching losses
■
Extremely fast switching
■
Low forward drop voltage
■
Low capacitance
■
Low thermal resistance
■
Insulated package: TO-220FPAB
Insulating voltage = 2000 V DC
Capacitance = 12 pF
■
Avalanche capability specified
A2
A1
K
A1
DPAK
STPS640CB
TO-220AB
STPS640CT
A2
K
A1
TO-220FPAB
STPS640CFP
Description
Dual Schottky rectifier suited to Switch Mode
Power Supplies and other Power Converters.
This device is intended for use in low and medium
voltage operation, and particulary, in high
frequency circuitries where low switching losses
are required (free wheeling and polarity
protection).
March 2007
Rev 7
1/9
www.st.com
9
Characteristics
1
STPS640C
Characteristics
Table 1.
Absolute ratings (limiting values, per diode)
Symbol
VRRM
Parameter
Unit
40
V
Repetitive peak reverse voltage
IF(RMS) RMS forward voltage
IF(AV)
Value
Average forward current δ = 0.5
TO-220AB /TO-220FPAB
10
DPAK
6
TO-220AB
Tc = 135° C
TO-220FPAB
Tc = 130° C
DPAK
Tc = 120° C
A
3
A
IFSM
Surge non repetitive forward
current
tp = 10 ms Sinusoidal
75
A
IRRM
Repetitive peak reverse current
tp = 2 µs square F = 1 kHz
1
A
PARM
Repetitive peak avalanche power tp = 1 µs Tj = 25° C
1300
W
-65 to + 150
°C
150
°C
10000
V/µs
Value
Unit
Tstg
Tj
dV/dt
Table 2.
Storage temperature range
Maximum operating junction temperature
Critical rate of rise of reverse voltage
Thermal resistances
Symbol
Rth (j-c)
Rth(c)
Parameter
TO-220AB / DPAK
Per diode
Total
5.5
3
TO-220FPAB
Per diode
Total
5.5
5.2
Junction to case
Coupling
TO-220AB
°C/W
0.5
TO-220FPAB
°C/W
3
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 3.
Symbol
IR(1)
VF(1)
Static electrical characteristics (per diode)
Parameter
Reverse leakage current
Forward voltage drop
Test Conditions
Tj = 25° C
Tj = 125° C
VR = VRRM
Typ.
2
Max.
Unit
100
µA
10
mA
Tj = 25° C
IF = 3 A
0.63
Tj = 25° C
IF = 6 A
0.84
Tj = 125° C
IF = 3 A
0.5
0.57
Tj = 125° C
IF = 6 A
0.67
0.72
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.42 x IF(AV) + 0.050 IF2(RMS)
2/9
Min.
V
STPS640
Characteristics
Figure 1.
Average forward power
dissipation versus average
forward current (per diode)
Figure 2.
PF(AV)(W)
IF(AV)(A)
2.50
2.25
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
δ = 0.05
δ = 0.1
4.0
δ = 0.2
δ = 0.5
3.5
TO-220AB / DPAK
Rth(j-a)=Rth(j-c)
2.00
3.0
1.75
δ=1
1.50
2.5
1.25
2.0
TO-220FPAB
1.00
1.5
0.75
T
Rth(j-a)=15°C/W
T
1.0
0.50
0.25
0.5
δ=tp/T
IF(AV)(A)
δ=tp/T
tp
0.0
0.00
0.0
0.5
1.0
Figure 3.
1.5
2.0
2.5
3.0
3.5
0
4.0
Normalized avalanche power
derating versus pulse duration
25
Figure 4.
PARM(tp)
PARM(1µs)
Tamb(°C)
tp
50
75
100
125
150
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(25°C)
1
1.2
1
0.1
0.8
0.6
0.4
0.01
0.2
Tj(°C)
tp(µs)
0.001
0.01
0.1
Figure 5.
1
0
10
100
25
1000
Non repetitive surge peak forward
current versus overload duration.
(Maximum values, per diode)
(TO-220AB / DPAK)
50
Figure 6.
75
100
125
150
Non repetitive surge peak forward
current versus overload duration.
(Maximum values, per diode)
(TO-220FPAB)
IM(A)
IM(A)
40
45
40
35
35
30
30
25
25
TC=75°C
20
TC=75°C
20
TC=100°C
15
10
5
0
1E-3
TC=135°C
IM
t
1E-2
15
10
5
t(s)
δ=0.5
TC=100°C
TC=130°C
IM
t
t(s)
δ=0.5
1E-1
1E+0
0
1E-3
1E-2
1E-1
1E+0
3/9
Characteristics
Figure 7.
STPS640C
Figure 8.
Relative variation of thermal
transient impedance junction to
case versus pulse duration
(TO-220AB/DPAK)
Zth(j-c)/Rth(j-c)
Zth(j-c)/Rth(j-c)
1.0
1.0
0.8
0.8
δ = 0.5
0.6
0.4
Relative variation of thermal
impedance junction to case versus
pulse duration
(TO-220FPAB)
0.6
δ = 0.5
0.4
δ = 0.2
δ = 0.2
δ = 0.1
T
0.2
tp(s)
0.0
1E-3
1E-2
Figure 9.
δ=tp/T
tp
1E-1
T
δ = 0.1
0.2
Single pulse
tp(s)
Single pulse
1E+0
Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
0.0
1E-3
1E-2
δ=tp/T
1E-1
tp
1E+0
1E+1
Figure 10. Junction capacitance versus
reverse voltage applied (typical
values, per diode)
IR(A)
C(pF)
500
1E-2
F=1MHz
VOSC=30mVRMS
Tj=25°C
Tj=150°C
Tj=125°C
1E-3
100
Tj=100°C
1E-4
Tj=75°C
VR(V)
VR(V)
10
1E-5
0
5
10
15
20
25
30
35
1
40
Figure 11. Forward voltage drop versus
forward current (maximum values,
per diode)
2
5
10
20
50
Figure 12. Thermal resistance junction to
ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, copper thickness:
35 µm)
Rth(j-a)(°C/W)
IFM(A)
80
10.0
70
Tj=150°C
(typical values)
60
50
Tj=25°C
40
1.0
30
20
10
VFM(V)
0.1
0.0
4/9
0.1
0.2
0.3
0.4
0.5
S(Cu)(cm²)
0
0.6
0.7
0.8
0.9
1.0
0
4
8
12
16
20
24
28
32
36
40
STPS640
2
Package information
Package information
●
Epoxy meets UL94, V0
●
Cooling method: by conduction (C)
●
Recommended torque value: 0.55 Nm
●
Maximum torque value: 0.70 Nm
Table 4.
TO-220FPAB dimensions
Dimensions
Ref
A
B
H
Dia
L6
L7
L2
L3
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.70
0.018
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.70
0.045
0.067
F2
1.15
1.70
0.045
0.067
G
4.95
5.20
0.195
0.205
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L5
F1
L4
D
F2
L2
F
E
16 Typ.
0.63 Typ.
L3
28.6
30.6
1.126
1.205
L4
9.8
10.6
0.386
0.417
L5
2.9
3.6
0.114
0.142
L6
15.9
16.4
0.626
0.646
L7
9.00
9.30
0.354
0.366
Dia.
3.00
3.20
0.118
0.126
G1
G
5/9
Package information
Table 5.
STPS640C
DPAK dimensions
Dimensions
Ref
E
A
B2
C2
Millimeters
Inches
Min.
Max.
Min.
Max.
A
2.20
2.40
0.086
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.212
C
0.45
0.60
0.017
0.023
C2
0.48
0.60
0.018
0.023
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.251
0.259
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.397
L2
D
R
H
L4
A1
B
G
R
C
A2
0.60 MIN.
V2
L2
0.80 typ.
L4
0.60
1.00
0.023
0.039
V2
0°
8°
0°
8°
Figure 13. Footprint (dimensions in millimeters)
6.7
3
3
1.6
2.3
6.7
2.3
1.6
6/9
0.031 typ.
STPS640
Package information
TO-220AB dimensions
Table 6.
Dimensions
Ref
A
H2
Dia
C
L5
L7
L6
L2
F2
F1
L4
F
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
F2
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
M
E
G
Inches
D
L9
G1
Millimeters
16.4 typ.
0.645 typ.
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
Diam.
2.6 typ.
3.75
3.85
0.102 typ.
0.147
0.151
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
7/9
Ordering information
3
4
8/9
STPS640C
Ordering information
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS640CT
STPS640CT
TO-220AB
2.20 g
50
Tube
STPS640CB
S640C
DPAK
0.30 g
75
Tube
STPS640CB-TR
S640C
DPAK
0.30 g
2500
Tape and reel
STPS640CFP
STPS640CFP
TO-220FPAB
2.08 g
50
Tube
Revision history
Date
Revision
Aug-2003
6B
22-Mar-2007
7
Description of Changes
Last release.
Removed ISOWATT package.
STPS640
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2007 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
9/9