Order this document by MJE5850/D SEMICONDUCTOR TECHNICAL DATA " ! *Motorola Preferred Device 8 AMPERE PNP SILICON POWER TRANSISTORS 300, 350, 400 VOLTS 80 WATTS The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as: • Switching Regulators • Inverters • Solenoid and Relay Drivers • Motor Controls • Deflection Circuits Fast Turn–Off Times 100 ns Inductive Fall Time @ 25_C (Typ) 125 ns Inductive Crossover Time @ 25°C (Typ) Operating Temperature Range –65 to + 150_C 100_C Performance Specified for: ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents CASE 221A–06 TO–220AB MAXIMUM RATINGS Symbol MJE5850 MJE5851 MJE5852 Unit Collector–Emitter Voltage Rating VCEO(sus) 300 350 400 Vdc Collector–Emitter Voltage VCEV 350 400 450 Vdc Emitter Base Voltage VEB 6.0 Vdc Collector Current — Continuous Peak (1) IC ICM 8.0 16 Adc Base Current — Continuous Peak (1) IB IBM 4.0 8.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 80 Watts 0.640 W/_C – 65 to 150 _C Operating and Storage Junction Temperature Range TJ, Tstg THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle Symbol Max Unit RθJC 1.25 _C/W TL 275 _C 10%. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. Designer’s and SWITCHMODE are trademarks of Motorola, Inc. Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max VCEO(sus) 300 350 400 — — — — — — — — 0.5 2.5 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 10 mA, IB = 0) MJE5850 MJE5851 MJE5852 Vdc Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C) ICEV mAdc Collector Cutoff Current (VCE = Rated VCEV, RBE = 50 Ω, TC = 100_C) ICER — — 3.0 mAdc Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO — — 1.0 mAdc SECOND BREAKDOWN Second Breakdown Collector Current with base forward biased Clamped Inductive SOA with base reverse biased IS/b See Figure 12 RBSOA See Figure 13 *ON CHARACTERISTICS DC Current Gain (IC = 2.0 Adc, VCE = 5 Vdc) (IC = 5.0 Adc, VCE = 5 Vdc) hFE — 15 5 — — — — — — — — — — 2.0 5.0 2.5 — — — — 1.5 1.5 Cob — 270 — pF td — 0.025 0.1 µs tr — 0.100 0.5 µs ts — 0.60 2.0 µs tf — 0.11 0.5 µs tsv — 0.8 3.0 µs tc — 0.4 1.5 µs tfi — 0.1 — µs tsv — 0.5 — µs tc — 0.125 — µs tfi — 0.1 — µs Collector–Emitter Saturation Voltage (IC = 4.0 Adc, IB = 1.0 Adc) (IC = 8.0 Adc, IB = 3.0 Adc) (IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C) VCE(sat) Base–Emitter Saturation Voltage (IC = 4.0 Adc, IB = 1.0 Adc) (IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C) VBE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz) SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time Rise Time Storage Time Fall Time (VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A, tp = 50 µs, Duty Cycle 2%) (VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A, VBE(off) = 5 Vdc, tp = 50 µs, Duty Cycle 2%) Inductive Load, Clamped (Table 1) Storage Time Crossover Time (ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A, VBE(off) = 5 Vdc, TC = 100_C) Fall Time Storage Time Crossover Time (ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A, VBE(off) = 5 Vdc, TC = 25_C) Fall Time * Pulse Test: PW = 300 µs. Duty Cycle 2 2% Motorola Bipolar Power Transistor Device Data VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS 200 TJ = 150°C hFE , DC CURRENT GAIN 100 70 50 TJ = 25°C 30 20 VCE = 5 V 10 7.0 5.0 3.0 2.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMPS) 5.0 7.0 10 2.0 1.6 IC = 0.25 A 1.2 TJ = 25°C 0.4 0 0.01 0.02 1.6 1.6 V, VOLTAGE (VOLTS) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 2.0 IC/IB = 4 1.2 TJ = 150°C TJ = 25°C 0.5 0.7 1.0 2.0 3.0 5.0 7.0 5.0 10 1.2 0.8 TJ = 25°C 0 0.1 10 TJ = 150°C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. Collector–Emitter Saturation Voltage Figure 4. Base–Emitter Voltage 105 10 3000 2000 TJ = 25°C 104 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (nA) 2.0 0.1 0.2 0.5 1.0 IB, BASE CURRENT (AMPS) IC/IB = 4 0.4 0.4 0.2 0.3 0.05 Figure 2. Collector Saturation Region 2.0 0 0.1 5.0 A 0.8 Figure 1. DC Current Gain 0.8 2.5 A 1.0 A TJ = 150°C 103 100°C 102 101 REVERSE FORWARD VCE = 200 V + 0.1 Cib 500 Cob 200 100 50 25°C 100 + 0.2 1000 0 – 0.1 – 0.2 – 0.3 – 0.4 VBE, BASE–EMITTER VOLTAGE (VOLTS) Figure 5. Collector Cutoff Region Motorola Bipolar Power Transistor Device Data – 0.5 30 0.1 0.2 0.5 1.0 5.0 10 20 50 100 200 500 1000 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance 3 Table 1. Test Conditions for Dynamic Performance VCEO(sus) RBSOA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING +V 50 µF + – 0.0025 µF –10 V 0.2 µF 1 0.1 µF 500 Ω INPUT CONDITIONS 500 Ω 1/2 W 0.1 µF 2 INPUT +V 0 PW Varied to Attain IC = 100 mA 1/2 W 1/2 W CIRCUIT VALUES TEST CIRCUITS INPUT SEE ABOVE FOR DETAILED CONDITIONS VCC = 250 V RL = 62 Ω Pulse Width = 10 µs Vclamp = 250 V RB adjusted to attain desired IB1 RESISTIVE TEST CIRCUIT t1 Adjusted to Obtain IC ICM tf Clamped t Lcoil Vclamp + OUTPUT WAVEFORMS Rcoil 1N4937 OR EQUIVALENT TURN–OFF TIME Use inductive switching driver as the input to the resistive test circuit. –V IC TUT 1 2 50 µF – V adjusted to obtain desired IB1 + V adjusted to obtain desired VBE(off) Lcoil = 180 µH Rcoil = 0.05 Ω VCC = 20 V IB1 adjusted to obtain the forced hFE desired 1 MJE15028 0.1 µF – INDUCTIVE TEST CIRCUIT IB1 1Ω2W 500 Ω 0.2 µF Lcoil = 80 mH, VCC = 10 V Rcoil = 0.7 Ω 2 1N4934 0.0033 µF 500 Ω 1/2 W 50 Ω 2W 1 MJE15029 20 0 TURN–ON TIME VCC t1 t1 ≈ tf t2 ≈ VCE VCEM RS = 0.1 Ω Vclamp TUT VCC RL 1 Lcoil (ICM) 2 VCC VClamp Test Equipment Scope — Tektronix 475 or Equivalent t TIME Lcoil (ICM) t2 3.0 1.0 IC = 4 A IC/IB = 4 TJ = 25°C tc tfi tsr 10% 2% ICM ICM trv tti IC 90% ICM ICM VCEM t c , CROSSOVER TIME (µs) IB VCE 10% 90% IB1 VCEM 0.8 2.7 2.4 2.1 tsv 100°C 0.6 1.8 tsv 25°C 1.5 1.2 0.4 0.9 0.2 0.6 tc 25°C Vclamp TIME 0.3 0 0 1 2 3 4 5 6 7 8 0 VBE, BASE–EMITTER VOLTAGE (VOLTS) Figure 7. Inductive Switching Measurements 4 Figure 8. Inductive Switching Times Motorola Bipolar Power Transistor Device Data t sv, VOLTAGE STORAGE TIME (µs) tc 100°C SWITCHING TIMES NOTE In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% VCEM trv = Voltage Rise Time, 10 – 90% VCEM tfi = Current Fall Time, 90 – 10% ICM tti = Current Tail, 10 – 2% ICM tc = Crossover Time,10% VCEM to 10% ICM An enlarged portion of the inductive switching waveform is 1.0 0.7 0.5 shown in Figure 7 to aid on the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN–222A: PSWT = 1/2 VCCIC(tc)f In general, trv + t fi t c. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25°C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (t c and t sv) which are guaranteed at 100_C. ] 10 VCC = 250 V IC/IB = 4 TJ = 25°C 0.3 0.7 ts t, TIME ( µs) t, TIME ( µs) 0.2 tr 0.1 0.07 0.05 0.4 VCC = 250 V IC/IB = 4 VBE(off) = 5 V TJ = 25°C 0.3 0.2 0.03 td 0.02 tf r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.01 0.1 1 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.3 0.5 0.7 1.0 2.0 4.0 7.0 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 9. Turn–On Switching Times Figure 10. Turn–Off Switching Time D = 0.5 0.3 0.2 0.2 0.1 ZθJC(t) = r(t) RθJC RθJC = 1.25°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) ZθJC(t) 0.1 0.07 0.05 0.05 0.02 0.03 0.02 0.01 SINGLE PULSE 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 t, TIME (ms) 10 20 50 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1k Figure 11. Typical Thermal Response [ZθJC(t)] Motorola Bipolar Power Transistor Device Data 5 The Safe Operating Area figures shown in Figures 12 and 13 are specified for these devices under the test conditions shown. SAFE OPERATING AREA INFORMATION FORWARD BIAS IC, COLLECTOR CURRENT (AMPS) 20 100 µs 10 5.0 1 ms 5 ms 2.0 TC = 25°C dc 1.0 0.5 BONDING WIRE LIMIT THERMAL LIMIT (SINGLE PULSE) SECOND BREAKDOWN LIMIT MJE5850 MJE5851 MJE5852 7.0 10 200 300 400 500 20 40 70 100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 0.2 0.1 0.05 0.02 Figure 12. Maximum Forward Bias Safe Operating Area There are two limitations on the power handling ability of a transistor average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 12 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 12 may be found at any case temperature by using the appropriate curve on Figure 15. T J(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage–current condition allowable during reverse biased turn–off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 13 gives the RBSOA characteristics. IC, COLLECTOR CURRENT (AMPS) 8.0 7.0 IC/IB = 4 VBE(off) = 2 V to 8 V TJ = 100°C 6.0 5.0 4.0 MJE5850 MJE5851 MJE5852 3.0 2.0 1.0 0 100 300 200 400 500 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 13. RBSOA, Maximum Reverse Bias Safe Operating Area 3.5 1 IB2(pk) (AMPS) POWER DERATING FACTOR IC = 4 A IB1 = 1 A TJ = 25°C 3.0 2.5 2.0 1.5 1.0 6 0 2 4 6 8 SECOND BREAKDOWN DERATING 0.8 0.6 THERMAL DERATING 0.4 0.2 0 20 40 60 80 100 120 140 VBE(off), BASE–EMITTER VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C) Figure 14. Peak Reverse Base Current Figure 15. Forward Bias Power Derating Motorola Bipolar Power Transistor Device Data 160 PACKAGE DIMENSIONS –T– B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V J G D N CASE 221A–06 TO–220AB ISSUE Y Motorola Bipolar Power Transistor Device Data NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 BASE COLLECTOR EMITTER COLLECTOR 7 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 8 ◊ Motorola Bipolar Power Transistor Device Data *MJE5850/D* MJE5850/D