<TRANSISTOR ARRAY> M54513FP 8-UNIT 50mA TRANSISTOR ARRAY SINK TYPE DESCRIPTION PIN CONFIGURATION M54513FP are eight-circuit transistor arrays. The circuits are made of NPN transistors. Both the semicon- ductor integrated NC circuits perform high-current driving with extremely low input- 1 ○ 20 NC IN1→ 2 19 →O1 IN2→ 3 18 →O2 FEATURES IN3→ 4 17 →O3 • High breakdown voltage （BVCEO ≧ 40V） IN4→ 5 16 →O4 IN5→ 6 15 →O5 IN6→ 7 14 →O6 IN7→ 8 13 →O7 IN8→ 9 12 →O8 current supply. INPUT • Synchronizing current (Ic(max) = 50mA) APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals GND 11 10 OUTPUT NC FUNCTION The M54513FP each have eight circuits consisting of NPN Package type 20P2N-A transistors. These ICs have resistance of 2kΩ at inputs and of NC : No connection 13.6kΩ between the base and emitter. The GND is used in common in each circuit. CIRCUIT DIAGRAM The transistors allow synchronous flow of 50mA collector current. A maximum of 40V voltage can be applied between the collector and emitter. OUTPUT INPUT 2K 13.6K GND The eight circuits share the GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit :Ω ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75 C) Symbol Parameter VCEO Collector-emitter voltage VI IC Pd Topr Tstg Input voltage Collector current Power dissipation Operating temperature Storage temperature 2012.May Conditions Output, H Current per circuit output, L Ta = 25 C, when mounted on board 1 Ratings Unit –0.5 ～ +40 V -0.5 ～ +10 50 1.10 –20 ～ +75 –55 ～ +125 V mA W ℃ ℃ <TRANSISTOR ARRAY> M54513FP 8-UNIT 50mA TRANSISTOR ARRAY SINK TYPE RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75 C) Symbol Parameter min 0 Limits typ － max 40 Unit V VO Output voltage IC Collector current 0 － 30 mA VIH “H” input voltage 2 － 8 V VIL “L” input voltage 0 － 0.2 V ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75 C) Symbol Parameter V(BR)CEO Collector-emitter breakdown voltage VCE(sat) Collector-emitter saturation voltage II hFE Input current DC amplification factor Test conditions min 40 — — — 80 ICEO = 100μA VI = 2V, IC = 10mA VI = 2.5V, IC = 30mA VI = 2.5V VCE = 4V, IC = 30mA, Ta = 25℃ Limits typ — 25 70 0.85 200 Unit max — 100 170 1.7 - V mV mA - *: The typical values are those measured under ambient temperature (Ta) of 25 C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75 C) Symbol ton toff Parameter Turn-on time Turn-off time Limits Test conditions min — — CL = 15pF(note 1) ｎｓ ｎｓ VO Measured device INPUT RL PG 50% 50% OUTPUT 50Ω OUTPUT CL 50% ｔon (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10 s, tr = 6ns, tf = 6ns, ZO = 50 VP = 2.5VP-P (2) Output conditions : RL = 300 , VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes 2012.May Unit max — — TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT typ 65 1200 2 50% ｔoff <TRANSISTOR ARRAY> M54513FP 8-UNIT 50mA TRANSISTOR ARRAY SINK TYPE TYPICAL CHARACTERISTICS Output Saturation Voltage Thermal Derating Factor Characteristics Collector Current Characteristics 2.0 50 Collector current Ic (mA) Power dissipation Pd (W) VI=2V 1.5 1.0 0.5 Ta=25℃ 40 Ta=-20℃ Ta=75℃ 30 20 10 0 0 0 25 50 75 100 0 Ambient temperature Ta (℃) 0.05 0.10 0.15 0.20 Output saturation voltage VCE(sat) (V) DC Amplification Factor Collector Current Characteristics Grounded Emitter Transfer Characteristics 10 3 50 VCE=4V VCE=4V 5 3 Collector current Ic (mA) DC amplification factor hFE 7 Ta=75℃ 2 10 2 7 Ta=25℃ 5 3 Ta=-20℃ 1 10 0 2 3 5 7 10 1 2 3 5 7 Ta=-20℃ 20 10 0 10 2 Input Characteristics 5 4 Ta=-20℃ 3 Ta=25℃ 2 Ta=75℃ 1 0 0 2 4 6 8 0 0.5 1.0 1.5 Input voltage VI (V) Collector current Ic (mA) Input current II (mA) Ta=25℃ 30 2 10 10 Input voltage VI (V) 2012.May Ta=75℃ 40 3 2.0 <TRANSISTOR ARRAY> M54513FP 8-UNIT 50mA TRANSISTOR ARRAY SINK TYPE PACKAGE OUTLINE 2012.May 4 <TRANSISTOR ARRAY> M54513FP 8-UNIT 50mA TRANSISTOR ARRAY SINK TYPE Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials •These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. •Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any thirdparty’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. •All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/). •When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. •Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. •The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. •If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. •Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. © 2012 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. 2012.May 5