< Silicon RF Power MOS FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from gate to source for ESD protection. FEATURES •High power gain and High Efficiency. 1.5+/-0.1 3.9+/-0.3 designed for VHF/UHF RF amplifiers applications. 1.6+/-0.1 1 0. φ 1 2 1.5+/-0.1 3 0.4 +0.03 -0.05 1.5+/-0.1 Pout 1.6W Typ, Gp 15dBTyp, 70%Typ 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 @Vdd=7.2V,f=527MHz 0.1 MAX •Integrated gate protection diode Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. RoHS COMPLIANCE RD01MUS2B-101,T113 is a RoHS compliant products. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 25 V VGSS Gate to source voltage Vds=0V -5/+10 V Pch Channel dissipation Tc=25°C 3.6 W Pin Input Power Zg=Zl=50 100 mW ID Drain Current - 600 mA Tch Channel Temperature - 150 °C Tstg Storage temperature - -40 to +125 °C Rth j-c Thermal resistance Junction to case 34.5 °C/W Note: Above parameters are guaranteed independently. Publication Date : Nov．2011 1 D G S SCHEMATIC DRAWING < Silicon RF Power MOS FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL PARAMETER LIMITS CONDITIONS UNIT MIN TYP MAX IDSS Zero gate voltage drain current VDS=17V, VGS=0V - - 50 uA IGSS Gate to source leak current VGS=10V, VDS=0V - - 1 uA Vth Gate threshold Voltage VDS=7.2V, IDS=1mA 0.5 1.0 1.5 V Pout Output power VDD=7.2V, Pin=30mW 1.0 1.6 - W Drain efficiency f=527MHz , Idq= 40mA 60 70 - % d * Note: Above parameters, ratings, limits and conditions are subject to change. * In Mitsubishi 527MHz Test Circuit Publication Date : Nov．2011 2 < Silicon RF Power MOS FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) CHANNEL DISSIPATION VS. AMBIENT TEMPERATURE Vgs-Ids CHARACTERISTICS 2.5 Ta=+25℃ Vds=10V *1:The material of the PCB Glass epoxy (t=0.6 mm) 2.0 3 On PCB(*1) with Heat-sink 1.5 Ids (A) CHANNEL DISSIPATION Pch(W) ... 4 2 1.0 1 On PCB(*1) 0.5 0 0 40 80 120 160 AMBIENT TEMPERATURE Ta(°C) 0.0 200 0 Vds-Ids CHARACTERISTICS Vgs= 9V Vgs= 8V Vgs= 7V 2.5 Vgs= 6V 2.0 Vgs= 4V 1.5 Vgs= 3V Ciss(pF) Ids(A) Vgs= 5V 1.0 Vgs= 2V 0.5 20 18 16 14 12 10 8 6 4 2 0 0.0 4 6 8 0 10 20 18 16 14 12 10 8 6 4 2 0 Ta=+25℃ f=1MHz Coss(pF) Crss(pF) 3 2 1 0 10 Vds(V) 15 5 5 10 Vds(V) 15 20 Vds VS. Coss CHARACTERISTICS Vds VS. Crss CHARACTERISTICS 4 5 4 Ta=+25℃ f=1MHz Vds(V) 0 3 Vds VS. Ciss CHARACTERISTICS Vgs=10V Ta=+25℃ 2 2 Vgs (V) 3.0 0 1 20 Ta=+25℃ f=1MHz 0 Publication Date : Nov．2011 3 5 10 Vds(V) 15 20 < Silicon RF Power MOS FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W UHF-band,527MHz, TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) Vgg-Po CHARACTERISTICS @f=527MHz Frequency Characteristics @f=527MHz 1.8 90 4.0 80 3.5 80 Po 1.6 70 ηd 3.0 <Condition> Pin=30mW, Vds=7.2V Idq=40mA(@Vds=7.2V, Vgs adj) 1.0 50 0.8 40 0.6 30 Pout(W), Idd(A) 60 Drain Effi(%), Gp(dB) Pout(W), Idd(A) 1.2 60 2.5 50 Ta=+25℃ f=527MHz Pin=30mW Vds=7.2V Idq= 40mA 2.0 Po 1.5 30 Gp Gp 0.4 0.2 Idd 0.0 500 510 520 530 540 20 1.0 10 0.5 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Vgg(V) Vdd-Po CHARACTERISTICS @f=527MHz 4.0 80 ηd 80 70 60 Gp 25 50 20 40 Po 15 30 10 60 Po 2.5 40 1.5 20 10 Idd 0.5 0 10 0 -5 0 5 Pin(dBm) 10 15 3 80 ηd 2.2 70 2.0 1.8 60 50 1.4 1.2 40 Ta=+25℃ f=527MHz Vds=7.2V Idq= 40mA 1.0 0.8 0.6 30 Drain Effi(%) Po 1.6 20 Idd 0.4 10 0.2 0.0 0 10 20 30 Pin(mW) Idd Idd 0.0 20 Pin vs Po CHARACTERISTICS@f=527MHz 2.4 0 30 Gp 1.0 ηd -10 50 2.0 20 5 Po(W) Idd(A) 70 Ta=+25℃ f=527MHz Pin=30mW Idq= 40mA 3.0 Pout(W), Idd(A) 30 3.5 Drain Effi(%) Pout(dBm) , Gp(dB), Idd(A) 35 10 0.0 f (MHz) Ta=+25℃ f=527MHz Vds=7.2V Idq= 40mA 20 Idd 0 560 550 Pin vs Po CHARACTERISTICS@f=527MHz 40 40 40 50 Drain Effi(%), Gp(dB) 70 ηd 60 Publication Date : Nov．2011 4 4 5 6 7 Vdd(V) 8 9 0 10 Drain Effi(%), Gp(dB) 1.4 < Silicon RF Power MOS FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W EQUIVALENT CIRCUITRY for Test Circuit (f=527MHz) C1 1000 pF Chip Ceramic Capacitiors C2 10 pF Chip Ceramic Capacitiors C3 33 pF Chip Ceramic Capacitiors C4 22 pF Chip Ceramic Capacitiors C5 12 pF Chip Ceramic Capacitiors C6 3 pF Chip Ceramic Capacitiors C7 1000 pF Chip Ceramic Capacitiors C8 0.022 μF Chip Ceramic Capacitiors C9 1000 pF Chip Ceramic Capacitiors C10 82 pF Chip Ceramic Capacitiors C11 82 pF Chip Ceramic Capacitiors C12 0.022 μF Chip Ceramic Capacitiors C13 1000 pF Chip Ceramic Capacitiors C14 22 μF Electrolytic Capacitior 4.7K ohm R1 Chip Resistors R2 100 ohm Chip Resistors R3 0 ohm Chip Resistors 8 nH Enameled wire 2Turns, D:0.23mm, Inside: 1.1mm L1 8 nH Enameled wire 2Turns, D:0.23mm, Inside: 1.1mm L2 12 nH Enameled wire 3Turns, D:0.23mm, Inside: 1.1mm L3 12 nH Enameled wire 3Turns, D:0.23mm, Inside: 1.1mm L4 29 nH Enameled wire 6Turns, D:0.40mm, Inside: 1.6mm L5 * Inductor of Rolling Coil measurement condition : f=100MHz Publication Date : Nov．2011 5 < Silicon RF Power MOS FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W Zout* (f=527MHz) Zo=50ohm @Pin=30mW, Vds=7.2V,Idq=40mA f Zout* (MHz) (ohm) 527 12.67 + j 6.67 f=527MHz Zout*: Complex conjugate of output impedance Zin* (f=527MHz) Zo=50ohm f=527MHz @Pin=30mW, Vds=7.2V,Idq=40mA f Zin* (MHz) (ohm) 527 5.93 + j 15.54 Zin*: Complex conjugate of intput impedance Publication Date : Nov．2011 6 < Silicon RF Power MOS FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W VHF-band TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) Frequency Characteristics @f=135-175MHz Vgg-Po CHARACTERISTICS @f=135/155/175MHz 1.8 180 4.0 160 3.5 80 Po 1.0 120 100 ηd 0.8 80 0.6 60 Idd 0.4 3.0 Pout(W), Idd(A) Pout(W), Idd(A) 1.2 Gp 130 140 150 160 40 15 30 Po Ta=+25℃ f=135/155/175MHz Vds=7.2V Idq= 40mA 10 ηd 5 Pout(W), Idd(A) 50 20 20 10 Idd 0 5 10 15 20 Pin(dBm) Pin vs Po CHARACTERISTICS@f=135/155/175MHz 2.4 80 ηd 2.2 70 2.0 -5 60 1.2 40 1.0 30 <Graph Line> : f=135MHz : f=155MHz : f=175MHz 0.8 0.6 Drain Effi(%) Po(W) Idd(A) 50 1.4 20 Idd 0.4 10 0.2 0.0 0 0 10 20 30 Pin(mW) 40 50 2.5 60 2.0 50 Po Ta=+25℃ f=135/155/175MHz Pin=30mW Idq=40mA 40 1.5 30 Gp 1.0 20 0.5 10 0 3 Po 1.6 70 ηd <Graph Line> : f=135MHz : f=155MHz : f=175MHz 0.0 0 1.8 80 Idd 0 -10 0 3.0 Drain Effi(%) Pout(dBm) , Gp(dB), Idd(A) 25 10 Idd 3.5 60 Gp 20 4.0 70 30 Gp Vdd-Po CHARACTERISTICS @f=135/155/175MHz 80 35 30 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Vgg(V) f (MHz) <Graph Line> : f=135MHz : f=155MHz : f=175MHz 40 Po 1.5 Pin vs Po CHARACTERISTICS@f=135/155/175MHz 40 50 0.0 0 180 170 2.0 0.5 20 0.0 2.5 <Graph Line> : f=135MHz : f=155MHz : f=175MHz 1.0 40 0.2 60 Ta=+25℃ f=135/155/175MHz Pin=30mW Vds=7.2V Idq= 40mA Drain Effi(%), Gp(dB) 140 <Condition> Pin=30mW, Vds=7.2V Idq=40mA(@Vds=7.2V, Vgs adj) Drain Effi(%), Gp(dB) 1.4 70 ηd 60 Publication Date : Nov．2011 7 4 5 6 7 Vdd(V) 8 9 10 Drain Effi(%), Gp(dB) 1.6 < Silicon RF Power MOS FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W EQUIVALENT CIRCUITRY for VHF EVALUATION BOARD (f=135 – 175MHz) C1 160 pF Chip Ceramic Capacitiors C2 36 pF Chip Ceramic Capacitiors C3 22 pF Chip Ceramic Capacitiors C4 27 pF Chip Ceramic Capacitiors C5 22 pF Chip Ceramic Capacitiors C6 430 pF Chip Ceramic Capacitiors C7 10 pF Chip Ceramic Capacitiors C8 7 pF Chip Ceramic Capacitiors C9 18 pF Chip Ceramic Capacitiors C10 160 pF Chip Ceramic Capacitiors C11 1000 pF Chip Ceramic Capacitiors C12 0.022 μF Chip Ceramic Capacitiors C13 1000 pF Chip Ceramic Capacitiors C14 0.022 μF Chip Ceramic Capacitiors C15 22 μF Electrolytic Capacitior Chip Resistors 4.7K ohm R1 Chip Resistors R2 47 ohm 40 nH Enameled wire 9Turns, D:0.23mm, Inside: 1.1mm L1 51 nH Enameled wire 11Turns, D:0.23mm, Inside: 1.1mm L2 40 nH Enameled wire 9Turns, D:0.23mm, Inside: 1.1mm L3 12 nH Enameled wire 3Turns, D:0.23mm, Inside: 1.1mm L4 17 nH Enameled wire 4Turns, D:0.23mm, Inside: 1.1mm L5 12 nH Enameled wire 3Turns, D:0.23mm, Inside: 1.1mm L6 37 nH Enameled wire 7Turns, D:0.4mm, Inside: 1.6mm L7 * Inductor of Rolling Coil measurement condition : f=100MHz For more information regarding this evaluation board, refer to APPLICATION NOTE “AN-VHF-055” Publication Date : Nov．2011 8 < Silicon RF Power MOS FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W Input / Output Impedance VS. Frequency Characteristics Zout* (f=135, 155, 175MHz) Zo=50ohm @Pin=30mW, Vds=7.2V,Idq=40mA f Zout* (MHz) (ohm) 135 19.81 + j 10.17 155 18.09 + j 11.73 175 16.62 + j 14.82 f=175MHz f=155MHz f=135MHz Zout*: Complex conjugate of output impedance Zin* (f=135, 155, 175MHz) @Pin=30mW, Vds=7.2V,Idq=40mA f Zin* (MHz) (ohm) 135 67.91 + j 54.09 155 69.90 + j 54.62 175 51.90 + j 47.13 Zo=50ohm Zin*: Complex conjugate of intput impedance f=175MHz f=135MHz f=155MHz Publication Date : Nov．2011 9 < Silicon RF Power MOS FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W 900MHz-band TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) Frequency Characteristics @f=890-941MHz Vgg-Po CHARACTERISTICS @f=890/915/941MHz 1.8 1.6 90 4.0 80 3.5 80 ηd 70 Po Pout(W), Idd(A) 3.0 60 <Condition> Pin=30mW, Vds=7.2V Idq=40mA(@Vds=7.2V, Vgs adj) 1.0 50 0.8 40 0.6 30 Pout(W), Idd(A) ηd 1.2 60 Ta=+25℃ f=890/915/941MHz Pin=30mW Vds=7.2V Idq= 40mA 2.5 2.0 <Graph Line> : f=890MHz : f=915MHz : f=941MHz 40 Po 1.5 Gp 0.4 0.2 20 0.5 10 Idd 30 Gp 1.0 20 50 Drain Effi(%), Gp(dB) 70 Drain Effi(%), Gp(dB) 1.4 10 Idd 880 890 900 910 920 930 940 0.0 0 950 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Vgg(V) f (MHz) Vdd-Po CHARACTERISTICS @f=890/915/941MHz Pin vs Po CHARACTERISTICS@f=890/915/941MHz : f=890MHz : f=915MHz : f=941MHz Po(dBm), Gp(dB), Idd(A) 35 30 25 80 4.0 70 3.5 60 3.0 50 Gp 20 40 15 30 Pout(W), Idd(A) <Graph Line> Ta=+25℃ f=890/915/941MHz Vds=7.2V Idq= 40mA Drain Effi(%) 40 80 ηd 60 <Graph Line> : f=890MHz : f=915MHz : f=941MHz 2.5 2.0 5 Idd ηd 0 -10 -5 0 5 Pin(dBm) 10 15 40 Ta=+25℃ f=890/915/941MHz Pin=30mW Idq=40mA 1.5 30 Gp 20 1.0 10 0.5 0 0.0 20 80 2.2 ηd 70 2.0 1.8 60 50 1.2 40 Po 1.0 Ta=+25℃ f=890/915/941MHz Vds=7.2V Idq= 40mA 0.8 0.6 <Graph Line> : f=890MHz : f=915MHz : f=941MHz 30 Drain Effi(%) Po(W) Idd(A) 1.6 1.4 20 0.4 10 0.2 Idd 0.0 0 0 10 20 30 Pin(mW) 40 50 20 Idd 60 Publication Date : Nov．2011 10 10 0 3 Pin vs PoCHARACTERISTICS@f=890/915/941MHz 2.4 50 Po Po 10 70 4 5 6 7 Vdd(V) 8 9 10 Drain Effi(%), Gp(dB) 0.0 < Silicon RF Power MOS FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W EQUIVALENT CIRCUITRY for 900MHz EVALUATION BOARD (f=890 – 941MHz) Chip Ceramic Capacitiors 150 pF C1 Chip Ceramic Capacitiors 4 pF C2 Chip Ceramic Capacitiors 4 pF C3 Chip Ceramic Capacitiors 30 pF C4 Chip Ceramic Capacitiors 10 pF C5 Chip Ceramic Capacitiors 10 pF C6 Chip Ceramic Capacitiors 10 pF C7 Chip Ceramic Capacitiors 10 pF C8 Chip Ceramic Capacitiors 8 pF C9 Chip Ceramic Capacitiors 2 pF C10 Chip Ceramic Capacitiors 150 pF C11 Chip Ceramic Capacitiors 100 pF C12 Chip Ceramic Capacitiors 1000 pF C13 Chip Ceramic Capacitiors 100 pF C14 Chip Ceramic Capacitiors 1000 pF C15 Electrolytic Capacitior 22 μF C16 Chip Resistors 18 ohm R1 Chip Resistors 4.7K ohm R2 Chip Resistors 0 ohm R3 Enameled wire 7Turns, D:0.40mm, Inside: 1.6mm 37 nH L1 *Inductor of Rolling Coil measurement condition : f=100MHz For more information regarding this evaluation board, refer to APPLICATION NOTE “AN-900-046” Publication Date : Nov．2011 11 < Silicon RF Power MOS FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W Zout* (f=890, 915, 941MHz) Zo=50ohm @Pin=30mW, Vds=7.2V,Idq=40mA f Zout* (MHz) (ohm) 890 8.80 - j 0.18 915 8.60 + j 0.37 941 8.39 + j 1.01 f=941MHz Zout*: Complex conjugate of output impedance f=915MHz f=890MHz Zin* (f=890, 915, 941MHz) Zo=50ohm f=915MHz @Pin=30mW, Vds=7.2V,Idq=40mA f Zin* (MHz) (ohm) 890 2.09 + j 2.48 915 2.19 + j 2.78 941 2.37 + j 2.82 f=941MHz f=890MHz Zin*: Complex conjugate of intput impedance Publication Date : Nov．2011 12 < Silicon RF Power MOS FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W RD01MUS2B S-PARAMETER DATA (@Vdd=7.2V, Id=40mA) Freq. [ MHz ] 100 135 155 175 200 250 300 350 400 450 500 520 530 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 S11 (mag) (ang) 0.896 -71.0 0.862 -84.5 0.847 -92.3 0.835 -99.1 0.823 -106.4 0.809 -118.1 0.803 -127.0 0.800 -134.0 0.801 -139.4 0.806 -144.1 0.810 -148.0 0.813 -149.4 0.814 -150.1 0.816 -151.4 0.825 -154.5 0.831 -157.2 0.838 -159.6 0.845 -161.9 0.852 -164.0 0.859 -166.1 0.865 -167.9 0.870 -169.6 0.876 -171.3 0.882 -172.9 0.887 -174.4 0.891 -175.9 0.894 -177.3 0.898 -178.5 0.902 -179.8 0.907 179.0 0.912 177.7 0.914 176.6 0.917 175.5 S21 (mag) (ang) 22.155 135.1 19.556 126.6 17.994 121.7 16.612 117.4 15.109 112.9 12.570 105.0 10.682 98.8 9.167 93.6 7.939 89.5 6.970 85.5 6.160 82.2 5.834 80.9 5.698 80.5 5.455 79.7 4.898 77.1 4.406 74.1 3.969 72.6 3.606 70.9 3.249 68.9 2.960 67.1 2.703 67.2 2.487 65.5 2.290 65.1 2.108 64.2 1.941 64.6 1.809 62.7 1.695 63.2 1.580 63.9 1.487 63.3 1.387 62.5 1.296 63.0 1.250 62.2 1.147 61.9 Publication Date : Nov．2011 13 S12 (mag) (ang) 0.029 46.0 0.033 37.5 0.035 32.3 0.036 28.1 0.038 23.9 0.039 17.0 0.039 10.9 0.039 6.3 0.038 2.7 0.037 -0.2 0.036 -3.1 0.036 -4.4 0.035 -5.0 0.034 -5.8 0.033 -7.0 0.032 -8.9 0.030 -10.3 0.029 -11.5 0.027 -12.6 0.026 -12.8 0.025 -13.7 0.023 -14.2 0.022 -14.7 0.021 -13.9 0.020 -15.9 0.017 -16.5 0.017 -13.3 0.015 -13.3 0.014 -12.0 0.013 -10.5 0.012 -8.3 0.011 -8.2 0.010 -5.0 S22 (mag) (ang) 0.775 -56.6 0.730 -68.2 0.705 -74.9 0.685 -80.9 0.667 -87.3 0.647 -97.8 0.640 -105.8 0.641 -112.5 0.648 -118.1 0.660 -122.9 0.673 -127.2 0.679 -128.6 0.682 -129.4 0.687 -131.0 0.702 -134.4 0.718 -137.6 0.733 -140.6 0.746 -143.5 0.760 -146.2 0.774 -148.6 0.784 -151.1 0.795 -153.4 0.805 -155.5 0.816 -157.6 0.825 -159.5 0.832 -161.4 0.841 -163.1 0.849 -164.9 0.856 -166.5 0.863 -168.2 0.868 -169.7 0.875 -171.1 0.880 -172.6 < Silicon RF Power MOS FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements and In the application, which is base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. For the reliability report which is described about predicted operating life time of Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. Publication Date : Nov．2011 14 < Silicon RF Power MOS FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. •The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. •If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. •Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. © 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publication Date : Nov．2011 15