J.Elieu ^s.mi-L-onaactoi I/ loaucti, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 2SB757 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package •High collector current •Wide area of safe operation •Complement to type 2SD847 APPLICATIONS •Audio amplifications •Serie regulators •General purpose power amplifiers PINNING DESCRIPTION PIN 1 1 Base 2 Collector;connected to mounting base 3 Emitter 2 3 Fig.1 simplified outline (TO-3PN) and symbol ABSOLUTE MAXIMUM RATINGS (Tc=25 SYMBOL CONDITIONS PARAMETER VALUE UNIT VCBO Collector-base voltage Open emitter -40 V VCEO Collector-emitter voltage Open base -40 V VEBO Emitter-base voltage Open collector -5 V Ic Collector current -15 A IB Base current -5 A PC Collector power dissipation 80 W Tj Junction temperature 150 Storage temperature -55-150 Tstg Tc=25 THERMAL CHARACTERISTICS PARAMETER SYMBOL Rth j-C Thermal resistance from junction to case Quality Semi-Conductors VALUE 1.56 UNIT /W 2SB757 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER SYMBOL CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage lc=-0.1mA;lE=0 -40 V V(BR)CEO Collector-emitter breakdown voltage lc=-10mA; IB=0 -40 V V(BR)EBO Emitter-base breakdown voltage lE=-0.1mA; lc=0 -5 V VcE(sat) Collector-emitter saturation voltage IC=-5A; IB=-0.5A -0.8 V VBE(sat) Base-emitter saturation voltage IC=-5A; IB=-0.5A -1.8 V ICBO Collector cut-off current VCB=-40V; IE=0 -10 uA IEBO Emitter cut-off current VEB=-5V; lc=0 -100 uA HFE DC current gain lc=-5A ; VCE=-2V 40 240 Switching times ton Turn-on time ts Storage time tf Fall time lc=-15A;lBi=-lB2=-1.5A RL=2n;Pw=20us,Duty<2% It - 1350 -.- 100° -J 480 -*- 4260 4060 ! . f ' / / !TAO_ ~ 36.60 7 •- 2 00 • 0.005 ^--1 i L-: 35.60 1 T 1 JlOM, \ ' S i^- 7 (S§) i£iS i fl^ 26.60 25.00 2260 21,10 12, 60 13 : 6 ' 1 .„ , ~\0 1 1l~^i ^ 69 J | i i Q j i ___ • 325 200 000 300 i I""" | 1 -i-5- ~l- f 60 ^3.40*8°' ^10 90'0.0 - t. 1.0 us 2.0 us 1.0 us