STMICROELECTRONICS BYW81HR

BYW81HR
Aerospace 1 x 15 A and 2 x 15 A - 200 V fast recovery rectifier
Features
■
Very small conduction losses
■
Negligible switching losses
■
High surge current capability
■
High avalanche energy capability
■
Hermetic packages
■
Target radiation qualification:
– 150 krad (Si) low dose rate
– 1 Mrad high dose rate
■
ESCC qualified
SMD.5
TO-254
Figure 1.
Device configurations
Variant 03
BYW81-200CFSY1
1
Description
Terminal 1: Anode a
Terminal 2: Common cathode
Terminal 3: Anode b
Packaged in hermetic TO-254 or SMD.5, this
device is intended for use in medium voltage, high
frequency switching mode power supplies, high
frequency DC to DC converters, and other
aerospace applications.
2
3
The case is not connected to any lead
Variant 05
BYW81-200SHRB
1
The complete ESCC specification for this device
is available from the European Space Agency
web site. ST guarantees full compliance of
qualified parts with such ESCC detailed
specifications.
Terminal 1: Anode
Terminal 2: Anode
Terminal 3: Cathode
3
2
The lid is not connected to any terminal
Table 1.
Device summary(1)
Order code
ESCC part
number
Quality level EPPL
Package
IF(AV)
-
Engineering
model
-
TO-254
2 x 15 A
BYW81-200CFSYHRB
5103/029/03
ESCC flight
-
TO-254
2 x 15 A
BYW81-200SHRB
5103/029/05
ESCC flight
Y
SMD.5
15 A
BYW81-200CFSY1
VRRM
VF (max)
Tj(max)
200 V
1.15 V
150 °C
1. Contact ST sales office for information about the specific conditions for products in die form and QML-Q versions.
November 2010
Doc ID 17735 Rev 1
1/9
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9
Characteristics
1
BYW81HR
Characteristics
Table 2.
Absolute maximum ratings
Symbol
Characteristic
IFSM
Forward surge current (1) (2)
Variant 05
Variant 03 (per diode)
Variant 03 (per device)
VRRM
Repetitive peak reverse voltage(3)
Value
250
250
500
200
Unit
A
V
(2)(4)
IO
IF(RMS)
TOP
TJ
Average output rectified current (50% duty cycle)
Variant 05
Variant 03 (per diode)
Variant 03 (per device)
15
15
30
Forward rms current (per diode)(2)
Variant 05
Variant 03 (per diode)
Variant 03 (per device)
30
30
40
Operating case temperature range(5)
Junction temperature
TSTG
Storage temperature range(5)
TSOL
Soldering temperature
TO-254(6)
SMD.5(7)
A
A
-55 to +150
°C
+150
°C
-55 to +150
°C
+260
+245
°C
1. Sinusoidal pulse of 10 ms duration
2. For variant 03 the “per device” ratings apply only when both cathode terminals are tied together.
3. Pulsed, duration 5 ms, F = 50 Hz
4. For Tcase ≥ +110°C, derate linearly to 0 A at +150°C.
5. For devices with hot solder dip lead finish all testing performed at Tamb > +125 °C are carried out in a 100%
inert atmosphere.
6. Duration 10 seconds maximum at a distance of not less than 1.5 mm from the device body and the same
lead shall not be resoldered until 3 minutes have elapsed.
7. Duration 5 seconds maximum the same package shall not be resoldered until 3 minutes have elapsed.
Table 3.
Symbol
Rth (j-c) (1)
Thermal resistance
Parameter
Junction to case
All variants (per diode)
Variant 03 (per device)(2)
Value
Unit
2.3
1.4
°C/W
1. Package mounted on infinite heatsink.
2. For variant 03 the “per device” ratings apply only when both cathode terminals are tied together.
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BYW81HR
Table 4.
Symbol
IR
VF1
Characteristics
s
Electrical measurements at ambiant temperature (per diode), Tamb = 22 ±3 °C
Characteristic
MIL-STD-750
test method
Reverse current
4016
Forward voltage
4011
(1)
VF2(1)
VBR
Limits
Test conditions
Units
Min.
Max.
DC method, VR = 200 V
-
20
µA
Pulse method, IF = 10 A
-
1.0
V
Pulse method, IF = 20 A
-
1.2
V
200
-
V
Breakdown voltage
4021
IR = 100 µA
C
Capacitance
4001
VR = 10 V, F = 1 MHz
-
220
pF
trr
Reverse recovery time
4031
IF = 1 A, VR = 30 V,
dIF/dt = -50 A/µs
-
40
ns
Relative thermal impedance,
junction to case
3101
IH = 15 to 40 A, tH = 50 ms
IM = 50 mA, tmd = 100 µs
Zth(j-c)(2)
Calculate ΔVF(3)
°C/W
1. Pulse width ≤ 300µs, duty cycle ≤ 2%
2. Performed only during screening tests parameter drift values (initial measurements), go-no-go.
3. The limits for ΔVF shall be defined by the manufacturer on every lot in accordance with MIL-STD-750 Method 3101 and
shall guarantee the Rth(j-c) limits specified in maximum ratings.
Table 5.
Symbol
IR
VF1
(2)
Electrical measurements at high and low temperatures (per diode)
Characteristic
Reverse current
Forward voltage
MIL-STD-750
test method
4016
4011
Limits
Test conditions(1)
Units
Min.
Max.
Tcase = +125 (+0, -5) °C
DC method, VR = 200 V
-
10
mA
Tcase = +125 (+0, -5) °C
pulse method, IF = 10 A
-
0.85
V
Tcase = +55 (+0, -5) °C
pulse method, IF = 10 A
-
1.15
V
1. Read and record measurements shall be performed on a sample of 5 components with 0 failures allowed. Alternatively a
100% inspection may be performed.
2. Pulse width ≤ 300µs, duty cycle ≤ 2%
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Package information
2
BYW81HR
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Figure 2.
Metal flange mount package (TO-254(a)) 3 lead, dimension definitions
B
R1
D
E
H
ØF
C
G
A
3
2
1
N
ØM
R2
L
K
ØI
K
J
a. The terminal identification is specified by the device configuration. See Figure 1 for terminal connections
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BYW81HR
Package information
Table 6.
Metal flange mount package (TO-254) 3-lead, dimension values
Dimension in millimetres
Dimlension in inches
Reference
Min.
Max.
Min.
Max.
A
13.59
13.84
0.535
0.545
B
13.59
13.84
0.535
0.545
C
20.07
20.32
0.790
0.800
D
6.3
6.7
0.248
0.264
E
1
3.9
0.039
0.154
ØF
3.5
3.9
0.138
0.154
G
16.89
17.4
0.665
0.685
H
ØI
(1)
6.86 BSC
0.89
0.270 BSC
1.14
0.035
0.045
J
3.81 BSC
0.150 BSC
K
3.81 BSC
0.150 BSC
L
12.95
14.5
ØM
0.510
3.05 Typ.
0.571
0.120 Typ.
N
-
0.71
-
0.028
R1(2)
-
1
-
0.039
(3)
1.65 Typ.
R2
0.065
1. 3 locations
2. Radius of heatsink flange corner - 4 locations
3. Radius of body corner - 4 locations
Doc ID 17735 Rev 1
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Package information
Figure 3.
BYW81HR
Surface mount package (SMD.5) 3-terminal, dimension definitions
A
e
A1
b2
b3
1
2
E
D1
D
b1
3
b
Table 7.
Surface mount package (SMD.5) 3-terminal, dimension values
Dimension in millimetres
Dimlension in inches
Reference
Min.
Max.
Min.
Max.
A
2.84
3.15
0.112
0.124
A1
0.25
0.51
0.010
0.20
b
7.13
7.39
0.281
0.291
b1
5.58
5.84
0.220
0.230
b2(1)
2.28
2.54
0.090
0.100
(1)
2.92
3.18
0.115
0.125
D
10.03
10.28
0.395
0.405
D1(1)
0.76
-
0.030
-
E
7.39
7.64
0.291
0.301
b3
e(1)
1.91 BSC
1. 2 locations
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BYW81HR
Ordering information
3
Ordering information
Table 8.
Ordering information(1)
Order code
BYW81-200CFSY1
ESCC part
number
Quality
level
-
Engineering
model
EPPL Package
-
TO-254
Lead
finish
Marking
Gold
BYW81200CFSY1
+ BeO
Mass Packing
10 g
BYW81200FSYHRB
5103/029/03 ESCC flight
-
TO-254
BYW81-200SHRB
5103/029/05 ESCC flight
Y
SMD.5
Solder
510302901 + BeO
dip
Gold
510302905
Strip
pack
2.0 g
1. Contact ST sales office for information about the specific conditions for products in die form and QML-Q versions.
Doc ID 17735 Rev 1
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Revision history
4
BYW81HR
Revision history
Table 9.
8/9
Document revision history
Date
Revision
03-Nov-2010
1
Changes
First issue.
Doc ID 17735 Rev 1
BYW81HR
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