DYNEX GP401LSS18

GP401LSS18
GP401LSS18
Powerline N-Channel Single Switch Low Loss IGBT Module
Preliminary Information
DS5288-1.3 January 2000
The GP401LSS18 is a single switch 1800V, robust n
channel enhancement mode insulated gate bipolar
transistor (IGBT) module. Designed for low power loss, the
module is suitable for a variety of high voltage applications
in motor drives and power conversion. The high
impedance gate simplifies gate drive considerations
enabling operation directly from low power control
circuitry.
VCES
VCE(sat)
IC70
IC(PK)80
IC25
KEY PARAMETERS
1800V
(typ)
2.6V
(max)
400A
(max)
800A
(max)
600A
Fast switching times allow high frequency operation
making the device suitable for the latest drive designs
employing pwm and high frequency switching. The IGBT
has a wide reverse bias safe operating area (RBSOA) for
ultimate reliability in demanding applications.
These modules incorporate electrically isolated base
plates and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise earthed
heat sinks for safety.
4
2
5
1
3
The powerline range of high power modules includes
dual and single switch configurations with a range of
current and voltage capabilities to match customer system
demands.
Typical applications include dc motor drives, ac pwm
drives, main traction drives and auxiliaries, large ups
systems and resonant inverters.
FEATURES
■ n - Channel
■ Enhancement Mode
Module outline type code: L
(See package details for further information)
Fig.1 Electrical connections - (not to scale)
■ High Input Impedance
■ Optimised For High Power High Frequency Operation
2(E)
■ Isolated Base
■ Ultra Low VCE(sat)
5(E1)
■ 400A Per Module
3(G1)
APPLICATIONS
■ High Power Switching
1(C)
4(C1)
Fig.2 Single switch circuit diagram
■ Motor Control
ORDERING INFORMATION
■ Inverters
Order As: GP401LSS18
■ Traction Systems
Note: When ordering, please use the complete part number.
■ Lower Loss Systems Retrofits
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/11
GP401LSS18
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.
Tcase = 25˚C unless stated otherwise.
Symbol
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
IC
IC(PK)
Test Conditions
Parameter
VGE = 0V
-
Max.
Units
1800
V
±20
V
Continuous collector current
DC, Tcase = 25˚C
600
A
Peak collector current
DC, Tcase = 70˚C
400
A
1ms, Tcase = 80˚C (Transistor)
800
A
Pmax
Max. power dissipation
Tcase = 25˚C (Transistor)
2980
W
Visol
Isolation voltage
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
4000
V
Min.
Max.
Units
THERMAL AND MECHANICAL RATINGS
Test Conditions
Parameter
Symbol
Rth(j-c)
Thermal resistance - transistor (per arm)
DC junction to case
-
42
˚C/kW
Rth(j-c)
Thermal resistance - diode (per arm)
DC junction to case
-
80
˚C/kW
Rth(c-h)
Thermal resistance - case to heatsink (per module)
Mounting torque 5Nm
-
15
˚C/kW
Transistor
-
125
˚C
Diode
-
125
˚C
–40
125
˚C
Mounting - M6
-
5
Nm
Electrical connections - M4
-
2
Nm
(with mounting grease)
Tj
Tstg
-
Junction temperature
Storage temperature range
Screw torque
-
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
2/11
GP401LSS18
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Min.
Typ.
Max.
Units
VGE = 0V, VCE = VCES
-
-
1
mA
VGE = 0V, VCE = VCES, Tcase = 125˚C
-
-
10
mA
Gate leakage current
VGE = ±20V, VCE = 0V
-
-
±2
µA
VGE(TH)
Gate threshold voltage
IC = 40mA, VGE = VCE
4
-
7.5
V
VCE(sat)
Collector-emitter saturation voltage
VGE = 15V, IC = 400A
-
2.6
3.2
V
VGE = 15V, IC = 400A, , Tcase = 125˚C
-
3.3
4.0
V
Symbol
ICES
IGES
Parameter
Collector cut-off current
Test Conditions
IF
Diode forward current
DC, Tcase = 55˚C
-
-
400
A
IFM
Diode maximum forward current
tp = 1ms, Tcase = 80˚C
-
-
800
A
VF
Diode forward voltage
IF = 400A
-
2.2
2.5
V
IF = 400A, Tcase = 125˚C
-
2.3
2.6
V
VCE = 25V, VGE = 0V, f = 1MHz
-
45
-
nF
-
15
-
nH
Cies
Input capacitance
LM
Module inductance
-
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/11
GP401LSS18
ELECTRICAL CHARACTERISTICS
For definition of switching waveforms, refer to figure 3 and 4.
Tcase = 25˚C unless stated otherwise.
Min.
Typ.
Max.
Units
IC = 400A
-
900
1100
ns
Fall time
VGE = ±15V
-
280
350
ns
EOFF
Turn-off energy loss
VCE = 900V
-
150
200
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 4.3Ω
-
500
650
ns
L ~ 100nH
-
200
400
ns
-
140
180
mJ
-
65
85
µC
Min.
Typ.
Max.
Units
IC = 400A
-
1010
1200
ns
Fall time
VGE = ±15V
-
390
500
ns
EOFF
Turn-off energy loss
VCE = 900V
-
180
230
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 4.3Ω
-
660
800
ns
L ~ 100nH
-
310
400
ns
-
210
260
mJ
-
90
115
µC
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Test Conditions
IF = 400A, VR = 50% VCES,
dIF/dt = 2500A/µs
Tcase = 25˚C unless stated otherwise.
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Test Conditions
IF = 400A, VR = 50% VCES,
dIF/dt = 2500A/µs
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
4/11
GP401LSS18
SWITCHING DEFINITIONS
+15V
Vge
10%
0V
-15V
t4 + 5µs
Eon =
∫V
.I dt
ce c
IC
90%
t1
td(on) = t2 - t1
10%
tr = t3 - t2
Vce
t1
t2
t4
t3
Fig.3 Definition of turn-on switching times
+15V
90%
0V
Vge
-15V
t7 + 20µs
Eoff =
∫V
.I dt
ce c
t5
90%
td(off) = t6 - t5
IC
10%
tf = t7 - t6
Vce
t5
t6
t7
Fig.4 Definition of turn-off switching times
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/11
GP401LSS18
TYPICAL CHARACTERISTICS
Vge = 20/15/12/10V
Vge = 20/15/12/10V
800
800
Common emitter
Tcase = 25˚C
700
700
600
Collector current, Ic - (A)
Collector current, Ic - (A)
600
500
400
300
500
400
300
200
200
100
100
0
0
1.0
2.0
3.0
4.0
Collector-emitter voltage, Vce - (V)
0
0
5.0
Fig.5 Typical output characteristics
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, Vce - (V)
6.0
Fig.6 Typical output characteristics
500
400
350
Common emitter
Tcase = 125˚C
Tcase = 25˚C
VGE = ±15V
VCE = 900V
450
Tcase = 125˚C
VGE = ±15V
VCE = 900V
400
Turn-on energy, EON - (mJ)
Turn-on energy, EON - (mJ)
300
250
A
200
B
150
C
350
A
300
250
B
200
C
150
100
100
A: Rg = 13Ω
B: Rg = 6.8Ω
C: Rg = 4.3Ω
50
0
0
50
100
150
200
250
300
Collector current, IC - (A)
350
Fig.7 Typical turn-on energy vs collector current
400
A: Rg = 13Ω
B: Rg = 6.8Ω
C: Rg = 4.3Ω
50
0
0
50
100
150
200
250
300
Collector current, IC - (A)
Fig.8 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
6/11
350
400
GP401LSS18
250
200
175
Tcase = 25˚C
VGE = ±15V
VCE = 900V
A
225
Turn-off energy, EOFF - (mJ)
Turn-off energy, EOFF - (mJ)
C
125
100
75
50
A: Rg = 13Ω
B: Rg = 6.8Ω
C: Rg = 4.3Ω
C
175
150
125
100
75
50
100
150
250
300
200
Collector current, IC - (A)
350
A: Rg = 13Ω
B: Rg = 6.8Ω
C: Rg = 4.3Ω
25
0
0
400
50
60
400
td(off)
Switching times, ts - (ns)
40
Tcase = 25˚C
30
20
10
Tcase = 125˚C
VGE = ±15V
VCE = 900V
Rg = 4.3Ω
800
td(on)
600
tf
400
200
0
100
350
1000
Tcase = 125˚C
50
200
150
250
300
Collector current, IC - (A)
1200
VGE = ±15V
VCE = 900V
Rg = 4.3Ω
0
100
Fig.10 Typical turn-off energy vs collector current
Fig.9 Typical turn-off energy vs collector current
Diode turn-off energy, Eoff(diode) - (mJ)
B
50
25
50
A
200
B
150
0
0
Tcase = 125˚C
VGE = ±15V
VCE = 900V
150
200
250
300
350
400
Collector current, IT - (A)
Fig.11 Typical diode reverse recovery charge vs collector current
0
0
tr
50
100
150
200
250
300
Collector current, IC - (A)
350
400
Fig.12 Typical switching characteristics
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/11
GP401LSS18
1000
800
900
700
Tj = 25˚C
800
700
Collector current, IC - (A)
Foward current, IF - (A)
600
500
Tj = 125˚C
400
300
600
500
400
300
200
200
100
100
Tcase = 125˚C
Vge = ±15V
Rg(min) = 4.3Ω
Rg(min) : Minimum recommended value
0
0
0.5
2.0
1.0
1.5
2.5
Foward voltage, VF - (V)
3.0
0
0
3.5
Fig.14 Reverse bias safe operating area
Fig.13 Diode typical forward characteristics
10000
IC max. (single pulse)
m
.D
ax
C
50µs
tin
on
(c
100µs
us
uo
Collector current, IC - (A)
IC
100
)
10
tp = 1ms
Transient thermal impedance, Zth (j-c) - (°C/kW )
100
1000
Diode
Transistor
10
1
0.1
1
1
10
100
1000
Collector-emitter voltage, Vce - (V)
Fig.15 Forward bias safe operating area
10000
1
10
100
Pulse width, tp - (ms)
1000
Fig.16 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
8/11
2000
1200
400
800
1600
Collector-emitter voltage, Vce - (V)
10000
GP401LSS18
700
900
PWM Sine Wave
Power Factor = 0.9,
Modulation Index =1
600
700
DC collector current, IC - (A)
Inverter phase current, IC(PK) - (A)
800
600
500
400
300
500
400
300
200
200
Conditions:
Tj = 125˚C, Tcase = 75˚C
Rg = 4.3Ω, VCC = 900V
100
100
0
1
10
fmax - (kHz)
Fig.17 3-Phase inverter operating frequency
20
0
0
20
40
60
80
100
120
Case temperature, Tcase - (˚C)
140
160
Fig.18 DC current rating vs case temperature
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
9/11
GP401LSS18
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
46.5
46.5
3.5x6
4x Ø6.5
27
6x5.5
16
4
1
20
61.4
48
40
5
2
3
20
24
29
2x M6
23
36max
3x M4
5
106.4
Nominal weight: 270g
Recommeded fixings for mounting: M6
Recommended mounting torque: 5Nm (44lbs.ins)
Recommended torque for electrical connections (M4): 2Nm (17lbs.ins)
Module outline type code: L
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Electrostatic handling precautions
AN4502
An introduction to IGBTs
AN4503
IGBT ratings and characteristics
AN4504
Heatsink requirements for IGBT modules
AN4505
Calculating the junction temperature of power semiconductors
AN4506
Gate drive considerations to maximise IGBT efficiency
AN4507
Parallel operation of IGBTs – punch through vs non-punch through characteristics
AN4508
Guidance notes for formulating technical enquiries
AN4869
Principle of rating parallel connected IGBT modules
AN5000
Short circuit withstand capability in IGBTs
AN5167
Driving high power IGBTs with concept gate drivers
AN5190
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
10/11
GP401LSS18
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the
voltage and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER IC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
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UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
Germany Tel: 07351 827723
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS5288-1.3 Issue No. 1.3 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
11/11