ERICSSON PTB20134

e
PTB 20134
30 Watts, 860–900 MHz
Cellular Radio RF Power Transistor
Description
The 20134 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 860 to 900 MHz. Rated at 30
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
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30 Watts, 860–900 MHz
Class AB Characteristics
50% Min Collector Efficiency at 30 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
Output Power (Watts)
50
VCC = 25 V
40
ICQ = 100 mA
f = 900 MHz
201
34
30
LOT
COD
E
20
10
0
0
1
2
3
4
5
Package 20201
Input Power (Watts)
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
VCER
40
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage (collector open)
VEBO
4.0
Vdc
Collector Current (continuous)
IC
8.0
Adc
Total Device Dissipation at Tflange = 25°C
PD
80
Watts
0.45
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
RθJC
2.2
°C/W
1
9/28/98
e
PTB 20134
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
IB = 0 A, IC = 100 mA
V(BR)CEO
25
30
—
Volts
Breakdown Voltage C to E
VBE = 0 V, IC = 100 mA
V(BR)CES
55
70
—
Volts
Breakdown Voltage E to B
IC = 0 A, IE = 5 mA
V(BR)EBO
3.5
5
—
Volts
DC Current Gain
VCE = 5 V, IC = 1 A
hFE
20
50
100
—
Symbol
Min
Typ
Max
Units
Gain
(VCC = 25 Vdc, Pout = 30 W, ICQ = 100 mA, f = 900 MHz)
Gpe
8
9.5
—
dB
Collector Efficiency
(VCC = 25 Vdc, Pout = 30 W, ICQ = 100 mA, f = 900 MHz)
ηC
50
—
—
%
Intermodulation Distortion
(VCC = 25 Vdc, Pout = 30 W(PEP), ICQ = 100 mA,
f = 900 MHz, ∆f = 1 MHz)
IMD
—
-30
—
dBc
Load Mismatch Tolerance
(VCC = 25 Vdc, Pout = 30 W, ICQ = 100 mA,
f = 900 MHz—all phase angles at frequency of test)
Ψ
—
—
30:1
—
RF Specifications (100% Tested)
Characteristic
Typical Performance
Gain & Efficiency vs. Frequency
(as measured in a broadband circuit)
13
80
70
Efficiency (%)
11
10
9
60
50
VCC = 25 V
Gain (dB)
ICQ = 100 mA
8
7
850
POUT = 30 W
860
40
Efficiency (%)
Gain (dB)
12
870
880
890
900
30
20
910
Frequency (MHz)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
2
Specifications subject to change without notice.
LF
© Ericsson Components AB 1995
EUS/KR 1301-PTB 20134 Uen Rev. D 09-28-98