ERICSSON PTB20017

e
PTB 20017
150 Watts, 860–900 MHz
Cellular Radio RF Power Transistor
Description
The 20017 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation across the 860 to 900 MHz cellular
radio frequency band. Rated at 150 watts minimum output power, it
may be used for both CW and PEP applications. Ion implantation,
nitride surface passivation and gold metallization are used to ensure
excellent device reliability. 100% lot traceability is standard.
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150 Watts, 860–900 MHz
Class AB Characteristics
50% Collector Efficiency at 150 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
Output Power (Watts)
240
200
160
200
17
LOT
120
80
VCC = 25 V
40
ICQ = 200 mA (per side)
f = 900 MHz
COD
E
0
0
7
14
21
28
35
Input Power (Watts)
Package 20224
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
VCER
40
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage (collector open)
VEBO
4.0
Vdc
Collector Current (continuous)
IC
25
Adc
Total Device Dissipation at Tflange = 25°C
PD
330
Watts
1.89
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
RθJC
0.53
°C/W
1
9/28/98
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PTB 20017
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
IB = 0 A, IC = 100 mA
V(BR)CEO
25
30
—
Volts
Breakdown Voltage C to E
VBE = 0 V, IC = 100 mA
V(BR)CES
55
70
—
Volts
Breakdown Voltage E to B
IC = 0 A, IE = 5 mA
V(BR)EBO
3.5
5
—
Volts
DC Current Gain
VCE = 5 V, IC = 1 A
hFE
20
50
100
—
Symbol
Min
Typ
Max
Units
Gain
(VCC = 25 Vdc, Pout = 150 W, ICQ = 200 mA per side,
f = 900 MHz)
Gpe
8.0
9.0
—
dB
Collector Efficiency
(VCC = 25 Vdc, Pout = 150 W, ICQ = 200 mA per side,
f = 900 MHz)
ηC
50
—
—
%
Intermodulation Distortion
(VCC = 25 Vdc, Pout = 150 W(PEP), ICQ = 200 mA per side,
f1 = 899 MHz, f2 = 900 MHz)
IMD
—
-28
—
dBc
Load Mismatch Tolerance
(VCC = 25 Vdc, Pout = 150 W(PEP), ICQ = 200 mA per side
f = 900 MHz—all phase angles at frequency of test)
Ψ
—
—
5:1
—
RF Specifications (100% Tested)
Characteristic
Impedance Data
(data shown for fixed-tuned broadband circuit)
(VCC = 25 Vdc, Pout = 150 W, ICQ = 200 mA per side)
Z Source
Frequency
Z Load
Z Source
Z Load
MHz
R
jX
R
jX
860
3.4
-6.7
3.5
-3.1
880
3.1
-6.1
3.4
-2.6
900
2.9
-5.6
3.2
-2.1
2
e
PTB 20017
Typical Performance
Gain & Efficiency vs. Frequency
(as measured in a broadband circuit)
11
80
10
70
9
60
8
50
Efficiency (%)
7
VCC = 25 V
40
6
ICQ = 200 mA (per side)
Pout = 150 Watts CW
30
5
840
855
870
885
900
Efficiency (%)
Gain (dB)
Gain (dB)
20
915
Frequency (MHz)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
3
Specifications subject to change without notice.
LF
© Ericsson Components AB 1994
EUS/KR 1301-PTB 20017 Uen Rev. D 09-28-98