e PTB 20193 60 Watts, 1.8–1.9 GHz Cellular Radio RF Power Transistor Description The 20193 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 1.9 GHz. It is rated at 60 watts minimum output power and may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 60 Watts, 1.8–1.9 GHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 70 60 50 201 93 LOT COD E 40 30 VCC = 26 V 20 ICQ = 150 mA f = 1.9 GHz 10 1 3 5 7 9 11 13 Input Power (Watts) Package 20223 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 55 Vdc Collector-Emitter Voltage VCES 55 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 8 Adc Total Device Dissipation at Tflange = 25° C PD 233 W 1.33 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70° C) RθJC 0.75 °C/W 1 9/28/98 e PTB 20193 Electrical Characteristics (100% Tested) Characteristics Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 60 mA, RBE = 27 Ω V(BR)CER 55 — — Volts Breakdown Voltage C to E VBE = 0 V, IC = 60 mA V(BR)CES 55 — — Volts Breakdown Voltage E to B IC = 0 V, IE = 25 mA V(BR)EBO 4 5 — Volts DC Current Gain VCE = 5 V, IC = 300 mA Hfe 20 50 120 — Symbol Min Typ Max Units Gpe 8.0 8.5 — dB P-1dB 60 — — Watts Collector Efficiency (VCC = 26 Vdc, Pout = 60 W, ICQ = 150 mA, f = 1.9 GHz) ηC 43 — — % Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 30 W, ICQ = 150 mA, f = 1.9 GHz—all phase angles at frequency of test) Ψ — — 5:1 — RF Specifications (100% Tested) Characteristics Gain (VCC = 26 Vdc, Pout = 15 W, ICQ = 150 mA, f = 1.9 GHz) Power Output at 1 dB Compression (VCC = 26 Vdc, ICQ = 150 mA, f = 1.9 GHz) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 26 Vdc, Pout = 60 W, ICQ = 150 mA) Z Source Z Load Z0 = 50 Ω Frequency Z Source Z Load GHz R jX R jX 1.80 4.0 -1.6 2.7 0.65 1.90 3.6 -.08 2.6 1.90 2 5/19/98 e PTB 20193 Typical Performance Efficiency vs. Output Power Gain vs. Frequency (as measured in a broadband circuit) 60 9.0 50 Efficiency (%) Gain (dB) 8.5 8.0 VCC = 26 V 7.5 7.0 1800 ICQ = 150 mA Pout =15 W 1820 1840 1860 1880 40 30 20 VCC = 26 V 10 ICQ = 150 mA f = 1.9 GHz 0 1900 20 25 30 Frequency (MHz) 35 40 45 50 55 60 65 Output Power (Watts) Intermodulation Distortion vs. Power Output -26 VCC = 26 V -28 ICQ = 150 mA IMD (dBc) -30 f1 = 1.899 GHz -32 f2 = 1.900 GHz -34 -36 -38 -40 0 10 20 30 40 50 60 Output Power (Watts-PEP) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 3 5/19/98 Specifications subject to change without notice. LF © 1996 Ericsson Inc. EUS/KR 1301-PTB 20193 Uen Rev. A 09-28-98