ERICSSON PTB20187

e
PTB 20187
4 Watts, 1.8–2.0 GHz
Cellular Radio RF Power Transistor
Description
The 20187 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.80 to 2.00 GHz. Rated at 4
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
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4 Watts, 1.80–2.00 GHz
Class AB Characteristics
30% Collector Efficiency at 4 Watts
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
Typical Output Power vs. Input Power
Output Power (Watts)
6
5
201
87
4
LO
TC
OD
E
VCC = 26 V
ICQ = 50 mA
f = 1.8-2.0 GHz
3
2
0.0
0.2
0.4
0.6
0.8
Package 20227
Input Power (Watts)
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
VCER
50
Vdc
Collector-Emitter Voltage
VCES
50
Vdc
Emitter-Base Voltage (collector open)
VEBO
4.0
Vdc
Collector Current (continuous)
IC
1.0
Adc
Total Device Dissipation at Tflange = 25°C
PD
19.7
Watts
0.112
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
RθJC
8.9
°C/W
1
9/28/98
e
PTB 20187
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
IB = 0 A, IC = 10 mA
V(BR)CEO
20
—
—
Volts
Breakdown Voltage C to E
VBE = 0 V, IC = 10 mA
V(BR)CES
50
—
—
Volts
Breakdown Voltage E to B
IC = 0 A, IE = 5 mA
V(BR)EBO
4
5
—
Volts
DC Current Gain
VCE = 5 V, IC = 50 mA
hFE
20
40
—
—
Symbol
Min
Typ
Max
Units
Gpe
8
10
—
dB
P-1dB
4
6
—
Watts
ηC
30
—
—
%
Ψ
—
—
5:1
—
RF Specifications (100% Tested)
Characteristic
Gain
(VCC = 26 Vdc, Pout = 4 W, ICQ = 50 mA, f = 2.00 GHz)
Power Output at 1 dB Compression
(VCC = 26 Vdc, ICQ = 50 mA, f = 2.00 GHz)
Collector Efficiency
(VCC = 26 Vdc, Pout = 4 W, ICQ = 50 mA, f = 2.00 GHz)
Load Mismatch Tolerance
(VCC = 26 Vdc, Pout = 4 W, ICQ = 50 mA,
f = 2.00 GHz—all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(VCC = 26 Vdc, Pout = 4 W, ICQ = 50 mA)
Z Source
Frequency
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Z Load
Z Source
Z Load
GHz
R
jX
R
jX
1.80
14.49
-7.50
11.49
-10.15
1.90
12.30
-6.16
7.23
-6.29
2.00
10.00
-3.55
4.41
-1.34
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
2
5/19/98
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20187 Uen Rev. B 09-28-98