HITACHI 2SH28

2SH28
Silicon N Channel IGBT
High Speed Power Switching
ADE-208-790A(Z)
2nd. Edition
May 1999
Features
• High speed switching
• Low on-voltage
Outline
TO–220AB
C
G
1
E
2
3
1. Gate
2. Collector (Flange)
3. Emitter
2SH28
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to Emitter voltage
VCES
600
V
Gate to Emitter voltage
VGES
±20
V
Collector current
IC
20
A
Collector peak current
ic(peak)
40
A
60
W
Note1
Collector dissipation
PC
Channel temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at Tc = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Zero gate voltage collector
current
I CES
—
—
100
µA
VCE = 600V, VGE = 0
Gate to emitter leak current
I GES
—
—
±1
µA
VGE = ± 20 V, VCE = 0
Gate to emitter cutoff voltage VGE(off)
6.0
—
8.0
V
I C = 20 mA, VCE = 10V
Collector to emitter saturation VCE(sat)
voltage
—
2.1
2.6
V
I C = 20 A, VGE = 15V
Input capacitance
Cies
—
1200
—
pF
VCE = 10V, VGE = 0
f = 1MHz
Switching time
tr
—
150
—
ns
I C = 20 A
t on
—
230
—
ns
RL = 15 Ω
tf
—
300
600
ns
VGS = ±15V
t off
—
450
900
ns
Rg = 50 Ω
2
2SH28
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
100
I C (A)
30
s
m
1
I C (A)
5
Collector Current
Collector Current
I C (A)
15 V
1
0.5
t)
20
2
)
3
10
30
100 300 1000
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
50
10
ho
Reverse Bias SOA
°C
25
1
1s
Ta = 25 °C
s(
c=
(T
50
100
150
200
Case Temperature Tc (°C)
m
10
on
0.1
0.01
20
=
ati
er
0.3
0.03
0
PW
Op
20
µs
1
40
0
10
3
Collector Current
60
10
DC
Channel Dissipation
Pch (W)
80
12 V
10 V
16
Pulse Test
12
8
9V
4
VGE = 8 V
0.2
Tc = 25 °C
0.1
0
200
400
600
800
Collector to Emitter Voltage VCE (V)
0
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
3
2SH28
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage
Typical Transfer Characteristics
16
12
Tc = 75°C
25°C
8
–25°C
4
0
4
8
12
Collector to Emitter Saturation Voltage
V CE(sat) (V)
Gate to Emitter Voltage
4
Collector to Emitter Saturation Voltage
V CE(sat) (V)
V CE = 10 V
Pulse Test
16
25°C
–25°C
0.5
V GE = 15 V
Pulse Test
0.1
0.1
1
3
0.3
10
30
Collector Current I C (A)
I C = 20 A
2
5A
1
10 A
4
8
12
Gate to Emitter Voltage
16
20
V GE (V)
10000
2
0.2
3
Typical Capacitance vs.
Collecotor to Emitter Voltage
Tc = 75°C
1
Pulse Test
4
V GE (V)
Collecot to Emitter Saturation Voltage
vs. Collector Current
10
5
5
0
20
3000
Capacitance C (pF)
Collector Current
I C (A)
20
VGE = 0
f = 1 MHz
1000
Cies
300
100
30
Coes
10
Cres
3
1
100
0
10
20
30
40
50
Collector to Emitter Voltage V CE (V)
2SH28
Switching Characteristics
12
VGE
I C = 20 A
200
V CC = 400 V
300 V
200 V
100
8
4
VCE
20
40
60
80
Gate Charge Qg (nc)
500
Switching Time t (ns)
300
16
V GE (V)
V CC = 200 V
300 V
400 V
400
0
1000
20
Gate to Emitter Voltage
Collector to Emitter Voltage
V CE (V)
Dynamic Input Characteristics
500
0
100
tf
200
100
t d(on)
20
V CC = 300V, V GE = ±15 V
Rg = 50 Ω , Ta = 25°C
Switching Characteristics
Switching Time t (ns)
Switching Time t (ns)
tf
tr
t d(off)
t d(on)
10
1
1
10
I C (A)
20
Switching Characteristics
500
300
3
5
2
Collector Current
1000
1000
30
tr
50
10
1
2000
100
t d(off)
3
10
30
100 300
Gate Resistance Rg ( Ω )
200
tr
100
t d(off)
50
20
I C = 20A, R L= 15 Ω
V GE = ±15 V
1000
tf
10
25
t d(on)
I C = 20A, RL = 15 Ω
V GE = ±15 V, Rg = 50 Ω
50
75
100
Case Temperature Tc (°C)
125
5
2SH28
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 2.08 °C/W, Tc = 25 °C
0.1
0.05
PDM
0.02
1
lse
0.0 t pu
o
h
1s
0.03
0.01
10 µ
D=
PW
T
PW
T
100 µ
1m
10 m
100 m
Pulse Width PW (S)
Switching Time Test Circuit
1
10
Waveform
90%
10%
0
Vin
Ic Monitor
90%
V CE
Vin Monitor
VCE
Monitor
Rg
10%
RL
td(on)
tr
ton
D.U.T.
90%
V CC
Vin ± 15 V
Ic
10%
td(off)
tf
toff
6
2SH28
Package Dimensions
Unit: mm
9.5
+ 0.1
4.44±0.2
f 3.6 – 0.08
8.0
1.26±0.15
1.27±0.1
1.5 max
7.8 ±0.5
0.76 ±0.1
2.54 ±0.5
2.54 ±0.5
14.0 ±0.5
1.2±0.1
15.0 ±0.3
18.5 ±0.5
6.4 – 0.1
+ 0.2
2.79 ±0.2
1.27
10.16±0.2
0.5±0.1
2.7 max
Hitachi Code TO–220AB
SC–46
EIAJ
—
JEDEC
7
2SH28
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
8