NEC UPA827TF-T1-A

PRELIMINARY DATA SHEET
NPN SILICON EPITAXIAL TWIN TRANSISTOR
FEATURES
•
UPA827TF
OUTLINE DIMENSIONS (Units in mm)
HIGH GAIN WITH LOW OPERATING CURRENT:
|S21E|2 = 9 dB TYP at f = 2 GHz, VCE = 2 V, lc = 7 mA
Package Outline TS06 (Top View)
2.1 ± 0.1
|S21E|2 = 8.5 dB TYP at f = 2 GHz, VCE = 1 V, lc = 5 mA
•
SMALL PACKAGE STYLE:
2 NE686 die in a 2 mm x 1.25 mm x 0.6 mm package
•
Pb-FREE
1.25 ± 0.1
0.65
1
6
2
5
3
4
+0.10
2.0 ± 0.2
1.3
0.22 - 0.05
(All Leads)
DESCRIPTION
The UPA827TF has two built-in low-voltage transistors which
are designed for low-noise amplification in the VHF to UHF
band. The two die are chosen from adjacent locations on the
wafer. These features combined with the pin configuration
make this device ideal for balanced or mirrored applications.
This device is suitable for low voltage/low current, low noise
applications, and its high fT makes it an excellent choice for
portable wireless applications. The thinner package style
allows for higher density designs.
0.6 ± 0.1
0.45
0.13 ± 0.05
0 ~ 0.1
Note:
Pin 1 is the lower left most pin as
the package lettering is oriented
and read left to right.
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
UPA827TF
TS06
UNITS
MIN
ICBO
Collector Cutoff Current at VCB = 5 V, IE = 0
μA
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
μA
hFE
DC Current Gain1 at VCE = 2 V, IC = 7 mA
fT
Gain Bandwidth (1) at VCE = 2 V, IC = 7 mA, f = 2 GHz
GHz
10
8.5
TYP
MAX
0.1
0.1
70
140
13
fT
Gain Bandwidth (2) at VCE = 1 V, IC = 5 mA, f = 2 GHz
GHz
Cre
Feedback Capacitance2 at VCB = 2 V, IE = 0, f = 1 MHz
pF
12
|S21E|2
Insertion Power Gain (1) at VCE = 2 V, IC =7 mA, f = 2 GHz
dB
7.5
9
|S21E|2
Insertion Power Gain (2) at VCE = 1 V, IC =5 mA, f = 2 GHz
dB
7
8.5
NF
Noise Figure (1) at VCE = 2 V, IC = 3 mA, f = 2 GHz
dB
1.5
2
NF
Noise Figure (2) at VCE = 1 V, IC = 3 mA, f = 2 GHz
dB
1.5
2
hFE1/hFE2
hFE ratio, VCE = 2 V, Ic = 7 mA
0.4
0.85
0.6
1.0
hFE1 = Smaller hFE value between Q1 and Q2
hFE2 = Larger hFE value between Q1 and Q2
Notes: 1. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with
emitter connected to guard pin of capacitances meter.
CaliforniaEasternLaboratories
UPA827TF
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
VCBO
Collector to Base Voltage
V
5
VCEO
Collector to Emitter Voltage
V
3
VEBO
Emitter to Base Voltage
V
2
IC
Collector Current
mA
10
PT
Total Power Dissipation
1 Element
2 Elements
mW
mW
30
60
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
Note: 1.Operation in excess of any one of these parameters
may result in permanent damage.
TYPICAL PERFORMANCE CURVES (TA = 25˚C)
COLLECTOR CURRENT vs.
DC BASE VOLTAGE
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
50
100
60mW
50
Per element
0
30mW
50
100
40
30
20
10
0
150
0.5
1.0
Ambient Temperature, TA (°C)
DC Base Voltage, VBE (V)
COLLECTOR CURRENT vs.
EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
10
Collector Current, lc (mA)
Collector Current, lc (mA)
2 elements in total
500
100 μA
80 μA
8
60 μA
6
40 μA
4
lB = 20 μA
2
DC Current Gain,hFE
Total Power Dissipation, PT (mW)
VCE = 2 V
200
100
VCE = 2 V
50
VCE = 1 V
20
10
0
1.0
2.0
3.0
Collector to Emitter Voltage, VCE (V)
1
2
5
10
20
Collector Current, lc (mA)
50
100
UPA827TF
TYPICAL PERFORMANCE CURVES (TA = 25˚C)
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
10
f = 2 GHz
Insertion Power Gain, |S21E|2 (dB)
Gain Bandwidth Product, fT (GHz)
15
VCE = 2 V
VCE = 1 V
10
5
VCE = 2 V
VCE = 1 V
5
0
1
2
3
5
7
10
1
20
2
3
5
10
Collector Current, lc (mA)
Collector Current, lc (mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
FEEDBACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
3
20
0.8
Feedback Capacitance, CRE (pF)
f = 2 GHz
Noise Figure, NF (dB)
7
2
VCE = 1 V
VCE = 2 V
1
f = 1 MHz
0.6
0.4
0.2
0
1
2
3
5
Collector Current, lc (mA)
7
10
0
2.0
4.0
6.0
8.0
Collector to Base Voltage, VCB (V)
10.0
UPA827TF
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
Q1
VCE = 2 V, IC = 1 mA, ZO = 50 Ω
FREQUENCY
(GHz)
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.20
1.50
1.70
2.00
2.50
3.00
S11
MAG
0.97
0.96
0.95
0.94
0.92
0.90
0.88
0.86
0.83
0.80
0.74
0.63
0.56
0.46
0.27
0.20
S21
ANG
-3.79
-7.62
-11.53
-15.36
-19.27
-23.25
-27.31
-31.26
-35.44
-39.13
-47.66
-61.74
-70.44
-86.95
-120.95
-171.57
MAG
2.37
2.35
2.40
2.38
2.39
2.38
2.37
2.37
2.37
2.33
2.32
2.31
2.23
2.16
2.03
1.83
S12
ANG
173.89
168.24
162.95
157.51
152.51
147.98
143.24
139.10
134.35
129.91
121.47
109.55
101.17
90.13
70.78
54.75
MAG
0.02
0.03
0.05
0.06
0.08
0.09
0.10
0.12
0.13
0.14
0.16
0.19
0.20
0.22
0.24
0.25
S22
ANG
86.19
83.85
80.08
77.05
74.32
71.00
68.16
65.24
62.59
59.95
55.12
48.35
44.53
38.96
32.87
27.71
MAG
0.99
0.99
0.98
0.97
0.96
0.95
0.93
0.91
0.89
0.86
0.82
0.75
0.70
0.64
0.54
0.46
ANG
-3.35
-6.52
-9.88
-13.07
-16.16
-19.49
-22.31
-25.62
-28.16
-31.26
-36.57
-44.21
-48.82
-55.67
-65.96
-77.11
Q2
VCE = 2 V, IC = 1 mA, ZO = 50 Ω
FREQUENCY
(GHz)
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.20
1.50
1.70
2.00
2.50
3.00
S11
MAG
0.97
0.96
0.95
0.94
0.92
0.91
0.89
0.86
0.84
0.82
0.76
0.67
0.61
0.53
0.38
0.30
S21
ANG
-3.76
-7.50
-11.38
-15.24
-19.09
-23.00
-26.94
-30.85
-34.90
-38.48
-46.39
-59.42
-67.25
-81.17
-105.57
-134.37
MAG
2.38
2.35
2.39
2.38
2.38
2.38
2.37
2.37
2.37
2.33
2.32
2.32
2.24
2.17
2.05
1.89
S12
ANG
173.74
167.97
162.59
157.14
152.09
147.56
142.82
138.70
133.96
129.63
121.22
109.38
101.17
90.51
71.84
56.05
MAG
0.02
0.03
0.05
0.06
0.08
0.09
0.11
0.12
0.13
0.14
0.16
0.19
0.20
0.22
0.25
0.27
S22
ANG
86.91
83.65
80.52
77.30
74.64
71.39
68.87
65.96
63.53
61.18
56.71
50.94
47.51
42.47
36.57
31.69
MAG
0.99
0.99
0.98
0.97
0.95
0.93
0.91
0.89
0.86
0.84
0.79
0.71
0.65
0.57
0.45
0.34
ANG
-3.32
-6.56
-9.72
-12.95
-15.89
-19.16
-21.99
-25.12
-27.55
-30.48
-35.31
-42.55
-47.09
-53.85
-64.55
-77.62
UPA827TF
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
Q1
VCE = 2 V, IC = 3 mA, ZO = 50 Ω
FREQUENCY
S11
S21
S12
S22
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.20
1.50
1.70
2.00
2.50
3.00
0.90
0.88
0.85
0.81
0.76
0.71
0.66
0.61
0.55
0.50
0.40
0.27
0.20
0.11
0.07
0.16
-6.40
-12.71
-19.07
-25.04
-31.15
-36.82
-42.59
-48.04
-53.11
-57.87
-66.68
-79.47
-88.30
-108.97
158.31
118.39
6.38
6.21
6.16
6.00
5.84
5.65
5.49
5.32
5.12
4.92
4.51
3.95
3.60
3.18
2.66
2.29
170.12
161.60
153.85
146.67
140.06
134.24
128.01
122.51
116.88
111.77
102.30
90.17
83.36
74.09
60.75
48.87
0.02
0.03
0.04
0.06
0.07
0.08
0.09
0.10
0.10
0.11
0.12
0.15
0.16
0.18
0.21
0.24
84.82
80.22
76.19
72.09
69.59
66.27
64.30
61.95
60.14
59.19
56.73
53.86
52.11
49.45
45.49
40.58
0.98
0.96
0.93
0.90
0.85
0.81
0.77
0.73
0.70
0.67
0.61
0.54
0.50
0.45
0.38
0.32
-5.79
-11.39
-16.48
-21.27
-25.20
-29.17
-32.16
-35.33
-37.63
-39.81
-43.76
-49.15
-52.50
-57.74
-64.84
-80.67
ANG
169.68
160.94
153.06
145.83
139.18
133.26
127.08
121.55
116.05
111.07
102.03
90.52
84.07
74.96
61.81
49.68
MAG
0.02
0.03
0.04
0.06
0.07
0.08
0.09
0.10
0.11
0.11
0.13
0.15
0.17
0.19
0.23
0.27
ANG
84.84
80.33
76.31
73.00
70.49
67.69
65.74
63.80
62.24
61.38
59.31
56.69
54.93
52.36
48.10
43.08
MAG
0.98
0.96
0.92
0.88
0.83
0.79
0.74
0.70
0.66
0.63
0.57
0.49
0.44
0.38
0.29
0.20
Q2
VCE = 2 V, IC = 3 mA, ZO = 50 Ω
FREQUENCY
(GHz)
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.20
1.50
1.70
2.00
2.50
3.00
S11
MAG
0.90
0.88
0.85
0.82
0.77
0.73
0.68
0.63
0.58
0.53
0.45
0.35
0.30
0.24
0.17
0.16
S21
ANG
-6.34
-12.58
-18.91
-24.80
-30.57
-36.24
-41.66
-46.88
-51.46
-55.76
-63.47
-74.44
-82.13
-95.31
-125.55
-165.06
MAG
6.39
6.20
6.14
5.97
5.79
5.59
5.41
5.23
5.02
4.80
4.39
3.84
3.52
3.13
2.66
2.31
S12
S22
ANG
-5.82
-11.25
-16.31
-20.79
-24.41
-28.04
-30.52
-33.20
-35.07
-36.80
-39.71
-43.54
-46.16
-49.40
-56.28
-66.61
UPA827TF
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
Q1
VCE = 2 V, IC = 7 mA, ZO = 50 Ω
FREQUENCY
S11
S21
S12
S22
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.20
1.50
1.70
2.00
2.50
3.00
0.79
0.74
0.67
0.59
0.52
0.45
0.38
0.33
0.28
0.24
0.17
0.08
0.04
0.03
0.12
0.21
-10.59
-20.57
-30.03
-38.34
-45.42
-51.28
-56.02
-59.86
-63.19
-65.89
-70.37
-78.15
-88.25
118.89
102.62
98.26
12.26
11.58
10.98
10.23
9.42
8.61
7.87
7.22
6.63
6.12
5.29
4.37
3.92
3.40
2.80
2.38
165.48
153.36
142.68
133.14
124.76
117.78
111.39
105.98
101.18
96.90
89.57
80.22
74.77
67.28
55.99
45.77
0.01
0.03
0.04
0.05
0.06
0.07
0.07
0.08
0.09
0.10
0.11
0.13
0.15
0.17
0.21
0.24
83.48
77.65
73.57
70.32
68.50
66.94
65.98
65.26
64.24
63.87
62.59
60.52
58.88
56.41
51.57
45.88
0.96
0.91
0.84
0.77
0.72
0.67
0.62
0.59
0.56
0.53
0.49
0.44
0.42
0.38
0.32
0.27
-8.71
-16.50
-22.47
-27.22
-30.47
-33.23
-35.02
-36.80
-38.15
-39.31
-41.59
-45.40
-48.34
-53.28
-63.74
-77.81
Q2
VCE = 2 V, IC = 7 mA, ZO = 50 Ω
FREQUENCY
S11
(GHz)
MAG
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.20
1.50
1.70
2.00
2.50
3.00
0.79
0.74
0.68
0.60
0.53
0.47
0.42
0.37
0.34
0.30
0.25
0.19
0.16
0.12
0.10
0.14
S21
S12
S22
ANG
MAG
ANG
MAG
ANG
MAG
-10.37
-20.08
-29.16
-36.85
-43.25
-48.47
-52.50
-56.05
-59.04
-61.69
-66.62
-75.77
-84.55
-101.92
-148.42
170.66
12.25
11.49
10.81
10.00
9.14
8.31
7.57
6.92
6.36
5.87
5.07
4.24
3.82
3.34
2.79
2.41
164.70
152.30
141.44
131.96
123.66
116.90
110.84
105.69
101.15
97.08
90.12
81.19
75.92
68.51
57.44
46.77
0.01
0.03
0.04
0.05
0.06
0.07
0.08
0.08
0.09
0.10
0.12
0.14
0.16
0.18
0.23
0.27
82.96
78.29
74.48
71.50
70.09
68.61
67.97
67.35
66.54
66.31
64.95
63.09
61.07
58.41
53.55
47.51
0.95
0.90
0.82
0.76
0.69
0.64
0.60
0.56
0.53
0.51
0.46
0.41
0.37
0.32
0.25
0.17
ANG
-8.66
-16.20
-21.74
-25.90
-28.46
-30.60
-31.88
-32.88
-33.54
-34.05
-35.02
-36.74
-38.42
-40.40
-45.38
-52.42
ORDERING INFORMATION
PART NUMBER
UPA827TF-T1-A
QUANTITY
3000
PACKAGING
Tape & Reel, Pb-Free
3/06/2006
A Business Partner of NEC Compound Semiconductor Devices, Ltd.