NPN SILICON HIGH FREQUENCY TRANSISTOR UPA809T OUTLINE DIMENSIONS (Units in mm) FEATURES • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 1.25 ± 0.1 0.65 DESCRIPTION 1 6 2 5 3 4 2.0 ± 0.2 The UPA809T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device suited for various hand-held wireless applications. 0.2 (All Leads) 1.3 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 9 VCEO Collector to Emitter Voltage V 6 VEBO Emitter to Base Voltage V 2 IC Collector Current mA 100 PT Total Power Dissipation 1 Die 2 Die mW mW 110 200 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 0.9 ± 0.1 0.7 +0.10 0.15 - 0.05 0 ~ 0.1 PIN OUT 1. Collector Transistor 1 2. Emitter Transistor 1 3. Collector Transistor 2 4. Emitter Transistor 2 5. Base Transistor 2 6. Base Transistor 1 Note: Pin 3 is identified with a circle on the bottom of the package. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS UPA809T S06 UNITS ICBO Collector Cutoff Current at VCB = 5V, IE = 0 µA IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA hFE1 Forward Current Gain at VCE = 1 V, IC = 3 mA fT Cre2 |S21E|2 NF hFE1/hFE2 Gain Bandwidth at VCE = 3 V, IC = 20 mA, f = 2 GHz MIN TYP 0.1 0.1 80 110 GHz 9.0 Feedback Capacitance at VCB = 1 V, IE = 0, f = 1 MHz pF 0.75 Insertion Power Gain at VCE = 3 V, IC =20 mA, f = 2 GHz dB 6.5 Noise Figure at VCE = 3 V, IC = 7 mA, f = 2 GHz dB hFE Ratio: hFE1 = Smaller Value of Q1, or Q2 hFE2 = Larger Value of Q1 or Q2 MAX 160 0.85 1.5 0.85 Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA809T-T1, 3K per reel. California Eastern Laboratories UPA809T TYPICAL PERFORMANCE CURVES (TA = 25°C) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2 200 El Pe em rE en ts lem in en To t al t 100 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0 50 100 0.01 0 150 0.5 1 Ambient Temperature, TA (°C) Base to Emitter Voltage, VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE DC CURRENT GAIN vs. COLLECTOR CURRENT 200 30 VCE = 1 V 200 µA 180 µA DC Current Gain, hFE Collector Current, IC (mA) VCE = 1 V 50 Collector Current, IC (mA) Total Power Dissipation, PT (mW) 100 Free Air 160 µA 20 140 µA 120 µA 100 µA 80 µA 10 60 µA 100 40 µA lB = 20 µA 0 0 1 2 3 4 5 1 2 5 10 20 50 100 Collector to Emitter Voltage, VCE (V) Collector Current, IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT INSERTION POWER GAIN vs. COLLECTOR CURRENT 10 10 VCE = 1 V f= 2 GHz Insertion Power Gain, IS21eI2 (dB) Gain Bandwidth Product, fT (GHz) 0.5 0.1 0.2 6 5 0 VCE = 1 V f= 2 GHz 5 0 1 2 3 5 Collector Current, IC (mA) 7 10 1 2 3 5 Collector Current, IC (mA) 7 10 UPA809T TYPICAL PERFORMANCE CURVES (TA = 25°C) FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE NOISE FIGURE vs. COLLECTOR CURRENT 3 f = 1 MHz Feddback Capacitance, CRE (pF) VCE = 1 V Noise Figure, NF (dB) f = 2 GHz 2 f = 1 GHz 1 0.5 0.1 0 1 2 3 5 7 10 1 5 10 Collector Current, lC (mA) Collector to Base Voltage, VCB (V) MAXIMUM AVAILABLE GAIN/INSERTION POWER GAIN vs. FREQUENCY NOISE FIGURE vs. FREQUENCY 20 VCE = 1 V lc = 5 mA VCE = 1 V lc = 5 mA 1.5 30 Noise Figure, NF (dB) Maximum Available Power Gain, MAG (dB) Insertion Power Gain, IS21eI2 (dB) 1.0 MAG 20 IS21EI 2 10 0 1 0.5 0.1 0.5 1 5 Frequency, f (GHz) QUANTITY 3000 0.5 1.0 Frequency, f (GHz) ORDERING INFORMATION PART NUMBER UPA809T-T1 0.1 PACKAGING Tape & Reel 2 UPA809T BJT NONLINEAR MODEL PARAMETERS (1) Parameters Q1, Q2 Parameters Q1, Q2 IS BF 3.8e-16 MJC 0.48 135.7 XCJC 0.56 NF 1 CJS 0 VAF 28 VJS 0.75 IKF 0.6 MJS 0 ISE 3.8e-15 FC 0.75 NE 1.49 TF 9e-12 BR 12.3 XTF 0.36 NR 1.1 VTF 0.65 VAR 3.5 ITF 0.61 IKR 0.06 PTF 50 ISC 3.5e-16 TR 32e-12 NC 1.62 EG 1.11 RE 0.4 XTB 0 RB 6.14 XTI 3 RBM 3.5 KF 0 IRB 0.001 AF 1 RC 4.2 CJE 0.796e-12 VJE 0.71 MJE 0.38 CJC 0.45e-12 VJC 0.65 (1) Gummel-Poon Model Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data. UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps MODEL RANGE Frequency: 0.1 to 3.0 GHz Bias: VCE = 1 V to 5 V, IC = 1 mA to 10 mA Date: 11/98 UPA809T NONLINEAR MODEL SCHEMATIC 0.07 pF C_C1B2 0.1 pF CCBPKG1 Pin_1 LC 0.3 pF 0.05 nH CCB1 C_C1E1 0.05 pF Pin_2 CCE1 0.19 pF LE LE1 0.05 nH 0.95 nH Q1 LC LB 0.55 nH 0.05 nH C_E1B2 0.3 pF LB2 C_E1C2 0.05 pF Pin_3 LB1 C_B1B2 0.05 pF LB 0.05 nH 0.65 nH CCB2 0.3 pF Pin_5 C_B2E2 0.05 pF Q2 LE2 0.8 nH 0.05 nH Pin_6 LE 0.05 nH Pin_4 0.19 pF CCE2 0.1 pF CCEPKG2 0.06 pF CCBPKG2 MODEL RANGE Frequency: 0.1 to 3.0 GHz Bias: VCE = 1 V to 5 V, IC = 1 mA to 10 mA Date: 11/98 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES ¥ Headquarters ¥ 4590 Patrick Henry Drive ¥ Santa Clara, CA 95054-1817 ¥ (408) 988-3500 ¥ Telex 34-6393 ¥ FAX (408) 988-02 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) ¥ Internet: http://WWW.CEL.COM 8/99 DATA SUBJECT TO CHANGE WITHOUT NOTICE