PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS (Units in mm) Package Outline TS06 (Top View) LOW NOISE: Q1:NF = 1.7 dB TYP at f = 2 GHz, VCE = 1 V, lc = 3 mA 2.1 ± 0.1 1.25 ± 0.1 Q2:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA • UPA833TF HIGH GAIN: Q1: |S21E|2 = 3.5 dB TYP at f = 2 GHz, VCE = 1 V, lc = 3 mA 0.65 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE • 2 DIFFERENT BUILT-IN TRANSISTORS (Q1: NE688, Q1: NE685) 6 2 5 3 4 +0.10 1.3 Q2: |S21E|2 = 8.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 10 mA • 1 2.0 ± 0.2 0.6 ± 0.1 0.45 0.22 - 0.05 (All Leads) 0.13 ± 0.05 0 ~ 0.1 DESCRIPTION The UPA833TF has two different built-in transistors for low cost amplifier and oscillator applications up to L and S band. Low noise figures, high gain, high current capability, and medium output give this device high dynamic range and excellent linearity for two-stage amplifiers. This device is also ideally suited for use in a VCO/buffer amplifier application. The thinner package style allows for higher density designs. PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1) Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE Q1 SYMBOLS UNITS ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 µA IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA hFE DC Current Gain1 at VCE = 1 V, IC = 3 mA MIN TYP 0.1 100 Gain Bandwidth (1) at VCE = 1 V, IC = 3 mA, f = 2 GHz GHz Gain Bandwidth (2) at VCE = 3 V, IC = 20 mA, f = 2 GHz GHz 9 Cre Feedback Capacitance2 at VCB = 1 V, IE = 0, f = 1 MHz pF 0.75 |S21E|2 Insertion Power Gain (1) at VCE = 1 V, IC =3 mA, f = 2 GHz dB |S21E|2 Insertion Power Gain (2) at VCE = 3 V, IC =20 mA, f = 2 GHz dB 6.5 Noise Figure (1) at VCE = 1 V, IC = 3 mA, f = 2 GHz dB 1.7 1.5 NF Noise Figure (2) at VCE = 3 V, IC = 7 mA, f = 2 GHz dB Collector Cutoff Current at VCB = 5 V, IE = 0 µA IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA hFE DC Current Gain1 at VCE = 3 V, IC = 10 mA fT Cre2 |S21E|2 NF Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz 4.0 145 fT ICBO MAX 0.1 fT NF Q2 PARAMETERS AND CONDITIONS UPA833TF TS06 2.5 4.5 0.85 3.5 2.5 0.1 0.1 75 150 GHz 12 Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz pF 0.4 Insertion Power Gain at VCE = 3 V, IC =10 mA, f = 2 GHz dB Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz dB 7 0.7 8.5 1.5 2.5 Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitances meter. California Eastern Laboratories UPA833TF ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS Q1 Q2 VCBO Collector to Base Voltage V 9 9 VCEO Collector to Emitter Voltage V 6 6 VEBO Emitter to Base Voltage V 2 2 30 IC Collector Current mA 100 PT Total Power Dissipation mW TJ Junction Temperature °C 150 150 2002 150 150 TSTG Storage Temperature °C -65 to +150 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. When operating both devices, the power dissipation for either device should not exceed 110 mW. TYPICAL PERFORMANCE CURVES (TA = 25˚C) Q2 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation, PT (mW) Total Power Dissipation, PT (mW) Q1 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Free Air 2 elements in total 200 Q1 when using 1 element Q1 when using 2 elements 100 0 50 100 150 Q2 when using 1 element Q2 when using 2 elements 100 50 100 Ambient Temperature, TA (°C) Ambient Temperature, TA (°C) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 150 50 VCE = 3 V VCE = 1 V 20 Collector Current, lc (mA) Collector Current, lc (mA) 200 0 100 50 Free Air 2 elements in total 10 5 2 1 0.5 0.2 0.1 0.05 40 30 20 10 0.02 0.01 0 0.5 Base to Emitter Voltage, VBE (V) 1 0 0.5 Base to Emitter Voltage, VBE (V) 1.0 UPA833TF TYPICAL PERFORMANCE CURVES (TA = 25˚C) Q1 Q2 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 60 30 500 µA 180 µA 50 Collector Current, lc (mA) Collector Current, lc (mA) 200 µA 160 µA 20 140 µA 120 µA 100 µA 80 µA 10 60 µA 40 µA 400 µA 40 300 µA 30 200 µA 20 lB=100 µA 10 lB = 20 µA 0 1 2 3 4 5 0 6 1 2 3 4 5 6 Collector to Emitter Voltage, VCE (V) Collector to Emitter Voltage, VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 200 200 DC Current Gain, hFE DC Current Gain, hFE VCE = 1 V 100 0 VCE = 3 V 100 0 0.1 0.2 0.5 1 2 5 10 20 50 100 0.1 0.2 0.5 1 2 5 10 20 50 100 Collector Current, lc (mA) Collector Current lc (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 14 VCE = 1 V f= 2 GHz Gain Bandwidth Product, fT (GHz) Gain Bandwidth Product, fT (GHz) 5V 5 0 f = 2 GHz 5V 12 3V 10 8 VCE = 1 V 6 4 2 1 2 3 5 Collector Current, lc (mA) 7 10 0.5 1 2 5 10 20 Collector Current, lc (mA) 50 UPA833TF TYPICAL PERFORMANCE CURVES (TA = 25˚C) Q1 Q2 INSERTION POWER GAIN vs. COLLECTOR CURRENT INSERTION POWER GAIN vs. COLLECTOR CURRENT 10 VCE = 1 V f= 2 GHz Insertion Power Gain, |S21E|2 (dB) Insertion Power Gain, |S21E|2 (dB) 10 5 f = 2 GHz 5V 8 3V VCE = 1 V 6 4 2 0 1 2 3 5 7 10 0.5 2 5 10 20 50 Collector Current, lc (mA) Collector Current, lc (mA) NOISE FIGURE vs. COLLECTOR CURRENT NOISE FIGURE vs. COLLECTOR CURRENT 3 4 VCE = 3 V f = 2 GHz VCE = 1 V Noise Figure, NF (dB) Noise Figure, NF (dB) f = 2 GHz 2 f = 1 GHz 3 2 1 1 0 0 1 2 3 5 7 0.5 10 1 2 5 10 20 Collector Current, lc (mA) Collector Current, lc (mA) FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 50 0.6 f = 1 MHz Feedback Capacitance, Cre (pF) Feedback Capacitance, Cre (pF) f = 1 MHz 1.0 0.5 0.5 0.4 0.3 0.2 0.1 1 5 10 Collector to Base Voltage, VCB (V) 20 0.5 1 2 5 10 Collector to Base Voltage, VCB (V) 20 UPA833TF Q2 MAXIMUM AVAILABLE GAIN, INSERTION POWER GAIN vs. FREQUENCY Q1 MAXIMUM AVAILABLE GAIN, INSERTION POWER GAIN vs. FREQUENCY VCE = 1 V lc = 5 mA 30 MAG 20 IS21EI 2 10 0 0.1 0.5 1 5 NOISE FIGURE vs. FREQUENCY VCE = 1 V lc = 5 mA Noise Figure, NF (dB) 1.5 1 0.5 0.5 1.0 Frequency, f (GHz) 25 VCE = 1 V lc = 5 mA 20 MAG 15 10 IS21EI 2 5 0 0.1 0.2 0.5 1 Frequency, f (GHz) Frequency, f (GHz) 0.1 Maximum Available Power Gain, MAG (dB) Insertion Power Gain, |S21E|2 (dB) Maximum Available Power Gain, MAG (dB) Insertion Power Gain, |S21E|2 (dB) TYPICAL PERFORMANCE CURVES (TA = 25˚C) 2 2 5 UPA833TF TYPICAL SCATTERING PARAMETERS Q1 VCE = 3 V, IC = 1 mA, Z0 = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.97 0.95 0.91 0.87 0.83 0.79 0.75 0.71 0.68 0.66 0.62 0.61 0.61 0.63 0.67 0.72 S21 ANG -14.33 -28.67 -42.88 -56.75 -70.72 -84.33 -97.41 -109.76 -122.09 -133.22 -154.11 179.69 165.55 147.73 125.32 109.50 MAG 2.43 2.38 2.36 2.27 2.23 2.16 2.08 1.99 1.92 1.82 1.66 1.43 1.29 1.12 0.92 0.76 S12 ANG 166.54 154.71 144.04 134.07 125.01 116.71 108.43 101.04 93.80 87.30 75.63 60.93 52.57 41.71 27.04 16.28 MAG 0.04 0.07 0.10 0.13 0.15 0.16 0.17 0.17 0.18 0.18 0.18 0.17 0.16 0.15 0.15 0.19 ANG 171.79 164.40 157.59 151.04 144.91 139.49 133.87 128.66 123.12 118.06 108.31 94.49 86.01 74.87 57.60 42.57 MAG 0.02 0.04 0.05 0.07 0.09 0.10 0.11 0.12 0.13 0.14 0.16 0.17 0.18 0.19 0.21 0.23 S22 ANG 80.24 70.60 62.11 54.03 47.25 40.79 35.62 31.08 26.89 23.81 19.11 15.48 15.97 20.29 33.50 42.71 MAG 0.99 0.97 0.92 0.88 0.83 0.78 0.75 0.70 0.67 0.64 0.60 0.56 0.54 0.52 0.50 0.50 ANG 85.64 80.86 76.45 72.26 68.73 64.78 61.52 58.06 55.30 52.86 48.61 43.82 41.68 39.57 38.43 38.11 MAG 0.99 0.99 0.97 0.95 0.93 0.90 0.87 0.85 0.82 0.78 0.73 0.66 0.61 0.55 0.46 0.38 ANG -7.18 -13.99 -19.89 -25.53 -29.96 -34.25 -37.36 -40.60 -43.12 -45.41 -49.75 -56.32 -61.07 -69.09 -85.80 -105.83 Q2 VCE = 3 V, IC = 1 mA, Z0 = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.98 0.97 0.95 0.93 0.90 0.87 0.84 0.81 0.77 0.73 0.65 0.54 0.47 0.40 0.33 0.33 S21 ANG -5.93 -11.82 -17.85 -23.59 -29.61 -35.62 -41.49 -47.40 -53.49 -59.00 -71.05 -89.53 -101.29 -120.45 -153.17 177.01 MAG 2.43 2.41 2.42 2.39 2.38 2.37 2.34 2.32 2.32 2.26 2.21 2.13 2.02 1.90 1.71 1.54 S12 S22 ANG -3.75 -7.53 -11.10 -14.56 -17.91 -21.19 -23.71 -26.91 -29.05 -31.52 -35.51 -41.12 -44.56 -49.87 -59.91 -74.21 UPA833TF TYPICAL SCATTERING PARAMETERS Q1 VCE = 3 V, IC = 5 mA, Z0 = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.85 0.75 0.64 0.56 0.49 0.45 0.42 0.41 0.40 0.40 0.41 0.43 0.45 0.49 0.54 0.60 S21 ANG -26.44 -51.20 -75.20 -96.72 -115.03 -130.31 -143.59 -155.39 -165.50 -174.72 169.76 151.58 142.01 130.04 114.93 103.96 MAG 10.69 9.61 8.75 7.76 6.80 5.95 5.26 4.72 4.25 3.87 3.28 2.66 2.36 2.01 1.62 1.36 S12 ANG 155.98 139.24 125.25 113.92 104.72 97.69 91.52 86.26 81.56 77.29 69.66 59.70 53.73 45.17 32.99 22.18 MAG 0.03 0.06 0.07 0.08 0.09 0.10 0.11 0.11 0.12 0.13 0.14 0.16 0.18 0.20 0.24 0.27 ANG 162.72 149.86 138.82 129.30 120.72 113.73 107.23 101.84 97.19 92.96 85.71 76.63 71.22 63.46 51.77 40.65 MAG 0.02 0.03 0.04 0.06 0.06 0.07 0.08 0.09 0.10 0.10 0.12 0.14 0.16 0.19 0.23 0.27 S22 ANG 73.46 61.17 54.17 50.16 48.17 47.13 46.84 46.85 46.62 46.83 46.94 46.31 45.59 44.01 40.36 36.49 MAG 0.92 0.79 0.65 0.55 0.48 0.42 0.38 0.35 0.32 0.30 0.27 0.23 0.22 0.20 0.20 0.21 ANG 81.62 74.55 69.69 66.77 64.98 63.78 63.28 62.73 62.37 62.23 61.60 60.08 58.93 57.05 52.54 47.15 MAG 0.96 0.90 0.81 0.74 0.68 0.62 0.58 0.55 0.52 0.49 0.45 0.40 0.37 0.33 0.26 0.17 ANG -19.86 -34.91 -44.33 -51.20 -55.56 -59.25 -61.89 -64.36 -66.67 -68.91 -73.69 -82.66 -89.61 -101.67 -125.90 -149.97 Q2 VCE = 3 V, IC = 5 mA, Z0 = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.89 0.83 0.75 0.66 0.57 0.50 0.43 0.37 0.33 0.29 0.23 0.17 0.15 0.13 0.15 0.22 S21 ANG -12.31 -23.63 -34.70 -44.55 -53.23 -60.42 -66.51 -71.94 -76.60 -81.19 -90.41 -106.89 -120.69 -145.48 176.33 153.43 MAG 10.46 9.75 9.25 8.62 7.96 7.27 6.64 6.08 5.57 5.15 4.45 3.70 3.33 2.92 2.45 2.12 S12 S22 ANG -9.77 -17.75 -23.24 -27.15 -29.45 -31.18 -32.03 -32.89 -33.36 -33.76 -34.67 -36.32 -38.02 -40.74 -48.08 -59.19 UPA833TF TYPICAL SCATTERING PARAMETERS Q1 VCE = 3 V, IC = 10 mA, Z0 = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.71 0.57 0.45 0.39 0.36 0.35 0.34 0.34 0.34 0.35 0.37 0.40 0.42 0.46 0.52 0.58 S21 ANG -39.03 -73.63 -102.58 -124.33 -141.02 -154.37 -165.44 -175.03 176.63 169.25 156.83 142.12 134.21 124.22 111.30 101.61 MAG 18.58 15.31 12.43 10.08 8.36 7.10 6.16 5.44 4.87 4.40 3.70 2.98 2.63 2.25 1.81 1.51 S12 ANG 147.71 127.39 112.73 102.91 95.89 90.47 85.73 81.61 77.75 74.22 67.77 59.04 53.75 46.04 37.71 24.93 MAG 0.03 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 0.13 0.15 0.17 0.19 0.22 0.26 0.30 S22 ANG 68.69 59.38 56.68 56.27 56.57 56.86 57.18 57.18 57.09 56.69 55.55 53.03 51.04 47.77 41.70 36.10 MAG 0.83 0.63 0.49 0.40 0.34 0.29 0.26 0.24 0.22 0.21 0.19 0.17 0.16 0.16 0.19 0.23 ANG -30.16 -48.07 -57.41 -63.51 -67.57 -71.19 -74.31 -77.41 -80.56 -83.81 -91.34 -104.99 -115.48 -131.74 -157.66 -177.86 Q2 VCE = 3 V, IC = 10 mA, Z0 = 50 Ω FREQUENCY S11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 0.79 0.67 0.55 0.44 0.37 0.31 0.26 0.23 0.20 0.18 0.14 0.10 0.08 0.09 0.13 0.20 -18.18 -33.75 -46.32 -55.16 -61.11 -65.90 -69.64 -73.22 -76.64 -80.09 -88.42 -107.91 -126.27 -158.61 164.55 146.66 17.81 15.65 13.67 11.71 10.03 8.70 7.66 6.84 6.18 5.63 4.80 3.94 3.53 3.08 2.57 2.21 156.05 139.27 125.80 115.64 108.02 102.30 97.45 93.31 89.63 86.38 80.51 72.79 68.12 61.31 50.55 40.11 0.02 0.03 0.04 0.05 0.06 0.07 0.07 0.08 0.09 0.10 0.12 0.15 0.16 0.19 0.24 0.28 79.00 72.98 69.74 69.07 68.93 68.67 68.49 68.26 68.18 67.74 66.68 64.56 62.66 59.98 54.48 48.32 0.92 0.80 0.69 0.61 0.56 0.52 0.49 0.46 0.44 0.43 0.40 0.36 0.33 0.29 0.22 0.14 -14.07 -22.91 -27.06 -28.96 -29.47 -29.62 -29.55 -29.57 -29.61 -29.60 -29.99 -31.58 -33.11 -35.72 -42.08 -51.14 UPA833TF TYPICAL SCATTERING PARAMETERS Q1 VCE = 3 V, IC = 20 mA, Z0 = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.52 0.39 0.33 0.31 0.30 0.30 0.31 0.31 0.32 0.33 0.35 0.38 0.41 0.44 0.50 0.56 S21 ANG -60.10 -103.44 -130.53 -148.95 -162.62 -172.99 178.35 170.80 164.26 158.34 148.21 135.96 129.06 120.40 108.77 100.10 MAG 28.62 19.94 14.51 11.26 9.15 7.69 6.63 5.84 5.21 4.70 3.94 3.16 2.79 2.38 1.90 1.61 BUILT-IN TRANSISTORS 3-pin small mini mold part No. S12 ANG 137.10 115.16 103.51 96.02 90.56 86.27 82.36 78.82 75.55 72.35 66.66 58.61 53.72 46.54 35.67 26.09 MAG 0.02 0.04 0.05 0.06 0.07 0.08 0.09 0.11 0.12 0.13 0.15 0.18 0.20 0.23 0.27 0.31 S22 ANG 67.35 63.08 63.34 64.33 65.01 65.06 64.97 64.40 63.46 62.64 60.45 56.50 53.77 49.64 42.37 35.76 MAG 0.71 0.48 0.35 0.28 0.24 0.21 0.19 0.18 0.16 0.16 0.15 0.15 0.15 0.17 0.21 0.26 ANG -41.30 -59.79 -68.39 -74.25 -78.55 -82.95 -87.11 -91.38 -96.07 -100.35 -110.63 -127.25 -138.41 -153.87 -174.96 168.73 ORDERING INFORMATION Q1 Q2 NE68830 NE68530 The UPA836TF features the Q1 and Q2 in inverted positions. PART NUMBER UPA833TF-T1 QUANTITY 3000 PACKAGING Tape & Reel UPA833TF BJT NONLINEAR MODEL PARAMETERS(1) Parameters Q1 Q2 Parameters Q1 Q2 IS 3.8e-16 7e-16 MJC 0.48 0.34 BF 135.7 109 XCJC 0.56 0 NF 1 1 CJS 0 0 0.75 VAF 28 15 VJS 0.75 IKF 0.6 0.19 MJS 0 0 ISE 3.8e-15 7.9e-13 FC 0.75 0.5 3e-12 NE 1.49 2.19 TF 11e-12 BR 12.3 1 XTF 0.36 5.2 NR 1.1 1.08 VTF 0.65 4.58 0.01 VAR 3.5 12.4 ITF 0.61 IKR 0.06 Infinity PTF 50 0 ISC 3.5e-16 0 TR 32e-12 1e-9 NC 1.62 2 EG 1.11 1.11 RE 0.4 1.3 XTB 0 0 RB 6.14 10 XTI 3 3 RBM 3.5 8.34 KF 1.5e-14 0 IRB 0.001 0.009 AF 1.22 1 RC 4.2 10 CJE 0.796e-12 0.4e-12 0.81 VJE 0.71 MJE 0.38 0.5 CJC 0.549e-12 0.18e-12 VJC 0.65 0.75 (1) Gummel-Poon Model UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps MODEL RANGE Frequency: 0.1 to 3.0 GHz Bias: VCE =0.5 V to 5 V, IC = 1 mA to 10 mA Date: 11/98 Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data. UPA833TF SCHEMATIC 0.07 pF C_C1B2 0.1 pF CCBPKG1 Pin_1 LC 0.15 pF 0.05 nH CCB1 C_C1E1 0.05 pF Pin_2 CCE1 0.19 pF LE LE1 0.05 nH 0.65 nH C_E1C2 0.05 pF Q1 LB1 LB 0.4 nH 0.05 nH C_E1B2 0.3 pF LE2 CCE2 Pin_6 C_B1B2 0.05 pF LE 0.05 nH 0.95 nH Pin_5 C_B2E2 0.05 pF 0.14 pF LC Pin_3 0.05 nH CCB2 0.08 pF Q2 LB2 0.25 nH LB 0.05 nH Pin_4 0.1 pF CCEPKG2 0.07 pF CCBPKG2 MODEL RANGE Frequency: 0.1 to 3.0 GHz Bias: VCE = 0.5 V to 5 V, IC = 1 mA to 10 mA Date: 11/98 ORDERING INFORMATION BUILT-IN TRANSISTORS 3-pin small mini mold part No. PART NUMBER UPA833TF-T1 Q1 Q2 NE68830 NE68530 QUANTITY 3000 PACKAGING Tape & Reel The UPA836TF features the Q1 and Q2 in inverted positions. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -2/99 DATA SUBJECT TO CHANGE WITHOUT NOTICE