PNP SILICON HIGH FREQUENCY TRANSISTOR NE97833 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE02133 • HIGH INSERTION POWER GAIN: |S21E|2 = 10 dB at 1 GHz 33 (SOT 23 STYLE) DESCRIPTION The NE97833 PNP silicon transistor is designed for ultrahigh speed current mode switching applications and microwave amplifiers up to 3.5 GHz. The NE97833 offers excellent performance and reliability at low cost. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NF |S21E|2 PARAMETERS AND CONDITIONS Gain Bandwidth Product at VCE = -10 V, IC = -15 mA NE97833 2SA1978 33 UNITS MIN TYP GHz 4.0 5.5 Noise Figure at VCE = -10 V, IC = -3 mA dB Insertion Power Gain at VCE = -10 V, IC = -15 mA, f = 1 GHz dB 2.0 8.0 10.0 20 40 MAX 3.0 hFE Forward Current Gain Ratio at VCE = -10 V, IC = -15 mA ICBO Collector Cutoff Current at VCB = -10 V, IE = 0 µA -0.1 IEBO Emitter Cutoff Current at VBE = -2 V, IC = 0 µA -0.1 C Feedback Capacitance at VCB = -10 V, IE = 0 mA, f = 1 MHz pF Total Power Dissipation mW RE2 PT 0.5 100 1.0 200 Notes: 1. Electronic Industrial Association of Japan. 2. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. California Eastern Laboratories NE97833 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V -20 VCEO Collector to Emitter Voltage V -12 VEBO Emitter to Base Voltage V -3 -50 IC Collector Current mA TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +200 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 100 DC Current Gain, HFE SYMBOLS DC CURRENT GAINS VS. COLLECTOR CURRENT VCE = -3 V VCE = -2 V VCE = -1 V 10 1 -0.1 TYPICAL PERFORMANCE CURVES (TA = 25°C) -1.0 -10 -100 -1000 Collector Current, IC (mA) DC POWER DERATING CURVES INSERTION GAIN vs. FREQUENCY FREE AIR 30 Insertion Power Gain, |S21E|2 Total Power Dissipation, PT (mW) 400 300 200 NE97833 100 20 VCE = -10 V IC = -15 mA 10 VCE = 1 V IC = 5 mA 0 -10 0 0 50 100 150 200 100 Ambient Temperature, TA (°C) 300 500 1000 3000 Frequency, f (MHz) GAIN BANDWIDTH vs. COLLECTOR CURRENT INSERTION GAIN vs. COLLECTOR CURRENT 14 14 f = 1 GHz f = 1 GHz 12 VCE = -10 V 10 8 6 VCE = -3 V 4 VCE = -1 V 2 Insertion Power Gain, |S21E|2 Gain Bandwidth Product, fT (GHz) 200 12 VCE = -10 V 10 8 6 VCE = -3 V 4 VCE = -1 V 2 0 0 1 10 Collector Current, IC (mA) 100 1 10 Collector Current, IC (mA) 100 NE97833 TYPICAL PERFORMANCE CURVES (TA = 25°C) NOISE FIGURE VS. COLLECTOR CURRENT DC CURRENT GAIN VS. COLLECTOR CURRENT 6 100 VCE = 10 V f = 1 GHz Noise Figure, NF DC Current Gain, HFE VCE = -10 V 10 4 2 0 1.0 -0.1 -1.0 -100 -10 -1000 10 1 Collector Current, IC (mA) 100 Collector Current, IC (mA) SWITCHING CHARACTERISTICS UNITS VIN = 1 V TYP Turn-on Delay Time ns 1.10 Rise Time ns 0.77 ns 0.40 ns 0.79 UNITS tON (delay) tr PARAMETERS tOFF (delay) Turn-off Delay Time tf Fall Time SWITCHING TIME MEASUREMENT CIRCUIT VCC (-) RC1 RC2 VIN VOUT tON (delay) RL1 VIN 20 ns RL2 tr 50 Ω RS Sampling Oscilloscope VBB (-) VOUT RE VEE (+) VIN = 1 v, VBB = -0.5 V, RC1 = RC2 RS (Ω) RC (Ω) RL1 (Ω) RL2 (Ω) RE (Ω) VEE (V) VCC (V) 160 1K 200 250 2.7 K 27 26.3 tf tOFF (delay) NE97833 TYPICAL SCATTERING PARAMETERS (TA = 25°C) 90˚ 1 0.8 1.5 0.6 S21 2 45˚ 135˚ 0.4 3 4 5 0.2 0.2 0.4 0.6 0.8 1 1.5 2 3 4 5 S12 10 20 50 10 20 -50 S11 180˚ 0.1 0.2 0.3 0.4 0.5 0˚ -20 -10 S22 2.5 -5 -4 -0.2 -3 -0.4 -2 -0.6 -1.5 -0.8 NE97833 VCE = -8 V, IC = -10 mA 5.0 225˚ -1 315˚ 270˚ VCE = -5 V, IC = -10 mA FREQUENCY (GHz) 0.50 0.80 1.00 1.50 2.00 2.50 3.00 4.00 5.00 S11 MAG 0.274 0.273 0.278 0.308 0.352 0.402 0.449 0.506 0.527 S21 ANG -149.2 -177.0 169.8 144.6 125.0 109.1 96.4 79.7 71.1 MAG 6.102 4.037 3.303 2.311 1.808 1.496 1.281 1.023 0.908 S12 S22 K MAG1 ANG 96.9 82.0 74.5 58.7 45.3 33.5 23.6 9.1 -1.8 MAG 0.063 0.093 0.114 0.170 0.229 0.288 0.345 0.458 0.574 ANG 68.1 70.1 70.3 68.1 63.9 58.3 52.4 40.7 27.4 MAG 0.493 0.432 0.412 0.381 0.362 0.359 0.364 0.350 0.246 ANG -30.9 -32.2 -34.5 -44.8 -59.4 -75.9 -91.0 -113.5 -138.8 0.97 1.07 1.09 1.08 1.03 0.99 0.95 0.91 0.92 (dB) 19.9 14.7 12.8 9.6 7.8 7.2 5.7 3.5 2.0 VCE = -8 V, IC = -10 mA 0.50 0.80 1.00 1.50 2.00 2.50 3.00 4.00 5.00 0.252 0.240 0.243 0.272 0.316 0.369 0.418 0.479 0.503 -140.2 -171.6 173.7 145.9 125.3 109.0 96.4 79.9 71.7 6.426 4.270 3.496 2.445 1.911 1.582 1.353 1.076 0.950 98.5 83.5 76.0 60.5 47.2 35.6 25.5 10.7 -0.4 0.060 0.089 0.109 0.162 0.219 0.276 0.333 0.445 0.563 68.7 70.6 70.9 60.5 65.0 59.8 54.2 42.9 30.2 0.523 -29.0 0.463 -30.1 0.443 -32.3 0.515 -43.9 0.393 -55.2 0.388 -70.6 0.392 -85.0 0.379 -106.3 0.278 -127.3 0.95 1.05 1.08 1.11 1.02 0.98 0.94 0.90 0.90 20.3 15.4 13.4 9.8 8.4 7.6 6.1 3.8 2.3 -80.8 -121.8 -143.5 173.5 142.8 120.2 103.4 81.7 69.6 4.097 3.325 2.864 2.107 1.669 1.382 1.179 0.934 0.844 116.8 94.8 84.2 64.5 49.0 36.0 25.6 11.9 3.0 0.076 0.094 0.106 0.140 0.186 0.241 0.302 0.433 0.575 55.1 53.5 55.4 69.0 62.8 61.5 57.9 47.8 34.3 0.697 -28.4 0.600 -32.6 0.564 -35.2 0.411 -39.4 0.494 -56.1 0.490 -70.2 0.496 -83.7 0.484 -105.8 0.382 -128.7 0.65 0.89 1.00 1.07 1.08 1.00 0.93 0.87 0.90 17.3 15.5 14.3 10.2 7.8 7.4 5.9 3.3 1.7 -153.1 179.7 166.8 141.5 122.3 107.1 95.0 79.5 72.1 6.846 4.489 3.664 2.554 1.992 1.648 1.410 1.121 0.984 96.2 82.4 75.4 60.6 47.7 36.2 26.3 11.3 -0.2 0.058 0.087 0.108 0.163 0.220 0.276 0.331 0.440 0.555 73.2 74.0 73.7 70.6 66.0 60.4 54.6 43.4 31.0 0.506 -27.0 0.456 -27.9 0.439 -30.1 0.441 -41.8 0.393 -52.7 0.387 -68.0 0.389 -82.1 0.377 -102.6 0.277 -121.3 0.99 1.06 1.07 1.05 1.01 0.97 0.94 0.89 0.89 20.7 15.6 13.7 10.6 8.9 7.8 6.3 4.1 2.5 VCE = -10 V, IC = -15 mA 0.50 0.80 1.00 1.50 2.00 2.50 3.00 4.00 5.00 0.555 0.399 0.348 0.314 0.342 0.393 0.446 0.515 0.529 VCE = -10 V, IC = -3 mA 0.50 0.80 1.00 1.50 2.00 2.50 3.00 4.00 5.00 0.214 0.215 0.221 0.254 0.300 0.352 0.402 0.463 0.489 Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE97833 OUTLINE DIMENSIONS (Units in mm) OUTLINE 33 RECOMMENDED P.C.B. LAYOUT PACKAGE OUTLINE 33 (SOT-23) +0.2 2.8 -0.3 2.4 2 2.9 ± 0.2 0.95 2 1.9 3 3 +0.10 0.4 -0.05 (ALL LEADS) 1.9 0.95 1 +0.2 1.5 -0.1 +0.10 0.65 -0.15 0.8 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector 1.1 to 1.4 0.8 0 to 0.1 1 1.0 +0.10 0.16 -0.06 ORDERING INFORMATION PART NUMBER NE97833-T1 QUANTITY PACKAGING 3000 Tape & Reel EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -7/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE