IXYS IXDN402

IXDN402 / IXDI402 / IXDF402
2 Ampere Dual Low-Side Ultrafast MOSFET Drivers
Features
General Description
• Built using the advantages and compatibility
of CMOS and IXYS HDMOSTM processes
• Latch-Up Protected Over Entire
Operating Range
• High Peak Output Current: 2A Peak
• Wide Operating Range: 4.5V to 25V
• High Capacitive Load
Drive Capability: 1000pF in <10ns
• Matched Rise And Fall Times
• Low Propagation Delay Time
• Low Output Impedance
• Low Supply Current
• Two Drivers in Single Chip
The IXDN402/IXDI402/IXDF402 consists of two 2 Amp
CMOS high speed MOSFET drivers. Each output can
source and sink 2A of peak current while producing voltage
rise and fall times of less than 15ns to drive the latest IXYS
MOSFETs & IGBTs. The input of the driver is TTL or CMOS
compatible and is fully immune to latch up over the entire
operating range. A patent-pending circuit virtually eliminates
cross conduction and current shoot-through. Improved
speed and drive capabilities are further enhanced by very
low and matched rise and fall times.
Applications
•
•
•
•
•
•
•
•
•
Driving MOSFETs and IGBTs
Motor Controls
Line Drivers
Pulse Generators
Local Power ON/OFF Switch
Switch Mode Power Supplies (SMPS)
DC to DC Converters
Pulse Transformer Driver
Class D Switching Amplifiers
The IXDN402 is configured as a dual non-inverting gate
driver, the IXDI402 as a dual inverting gate driver, and the
IXDF402 as a dual inverting + non-inverting gate driver.
The IXDN402/IXDI402/IXDF402 family are available in the
standard 8 pin P-DIP (PI), SOP-8 (SIA) and SOP-16 (SIA16) packages. For enhanced thermal performance, the
SOP-8 and SOP-16 are also available with an exposed
grounded backmetal package as the SI and SI-16 respectively.
Ordering Information
Part Number
Package Type
Temp. Range
IXDN402PI
8-Pin PDIP
IXDN402SI
8-Pin SOIC with Grounded Backmetal
-55°C to
IXDN402SIA
8-Pin SOIC
+125°C
IXDN402SI-16
16-Pin SOIC with Grounded Backmetal
IXDN402SIA-16
16-Pin SOIC
IXDI402PI
8-Pin PDIP
IXDI402SI
8-Pin SOIC with Grounded Backmetal
-55°C to
IXDI402SIA
8-Pin SOIC
+125°C
IXDI402SI-16
16-Pin SOIC with Grounded Backmetal
IXDI402SIA-16
16-Pin SOIC
IXDF402PI
8-Pin PDIP
IXDF402SI
8-Pin SOIC with Grounded Backmetal
-55°C to
IXDF402SIA
8-Pin SOIC
+125°C
IXDF402SI-16
16-Pin SOIC with Grounded Backmetal
IXDF402SIA-16
16-Pin SOIC
NOTE: Mounting or solder tabs on all packages are connected to ground
Copyright © IXYS CORPORATION 2002
First Release
Configuration
Dual Non
Inverting
Dual Inverting
Inverting + Non
Inverting
IXDN402 / IXDI402 / IXDF402
Figure 1 - IXDN402 Dual 2A Non-Inverting Gate Driver Functional Block Diagram
Vcc
P
ANTI-CROSS
CONDUCTION
CIRCUIT *
IN A
OUT A
N
P
ANTI-CROSS
CONDUCTION
CIRCUIT *
IN B
OUT B
N
GND
Figure 2 - IXDI402 Dual Inverting 2A Gate Driver Functional Block Diagram
Vcc
P
ANTI-CROSS
CONDUCTION
CIRCUIT *
IN A
OUT A
N
P
ANTI-CROSS
CONDUCTION
CIRCUIT *
IN B
OUT B
N
GND
Figure 3 - IXDF402 Inverting + Non-Inverting 2A Gate Driver Functional Block Diagram
Vcc
IN A
IN B
ANTI-CROSS
CONDUCTION
CIRCUIT *
ANTI-CROSS
CONDUCTION
CIRCUIT *
GND
* Patent Pending
2
P
OUT A
N
P
OUT B
N
IXDN402 / IXDI402 / IXDF402
Absolute Maximum Ratings (Note 1)
Parameter
Supply Voltage
All Other Pins
Junction Temperature
Storage Temperature
Lead Temperature (10 sec)
Operating Ratings
Parameter
Operating Temperature Range
Value
25 V
-0.3 V to VCC + 0.3 V
150 oC
Value
-55 oC to 125 oC
Thermal Impedance (To Ambient)
8 Pin PDIP (PI) (θJA)
8 Pin SOIC (SIA) (θJA)
-65 oC to 150 oC
300 oC
16 Pin SOIC (SIA-16) (θJA)
130 oC/W
120 oC/W
120 oC/W
Electrical Characteristics
Unless otherwise noted, TA = 25 oC, 4.5V ≤ VCC ≤ 25V .
All voltage measurements with respect to GND. IXDD402 configured as described in Test Conditions. All specifications are for one channel.
Symbol
Parameter
VIH
High input voltage
VIL
Low input voltage
VIN
Input voltage range
IIN
Input current
VOH
High output voltage
VOL
Low output voltage
ROH
Output resistance
@ Output high
Output resistance
@ Output Low
Peak output current
ROL
IPEAK
IDC
Test Conditions
Min
Max
3
0V ≤ VIN ≤ VCC
Units
V
2.4
V
-5
VCC + 0.3
V
-10
10
µA
VCC - 0.025
V
0.025
V
VCC = 18V
3.7
4
Ω
VCC = 18V
2.5
3
Ω
VCC is 18V
2
tR
Continuous output
current
Rise time
CL=1000pF Vcc=18V
7
tF
Fall time
CL=1000pF Vcc=18V
tONDLY
VCC
On-time propagation
delay
Off-time propagation
delay
Power supply voltage
ICC
Power supply current
VIN = 3.5V
VIN = 0V
VIN = + VCC
tOFFDLY
Typ
A
1
A
8
10
ns
7
8
9
ns
CL=1000pF Vcc=18V
27
28
32
ns
CL=1000pF Vcc=18V
25
26
30
ns
4.5
18
25
V
1
0
3
10
10
mA
µA
µA
Specifications Subject To Change Without Notice
3
IXDN402 / IXDI402 / IXDF402
Pin Description
SYMBOL
IN A
FUNCTION
A Channel Input
GND
Ground
IN B
B Channel Input
OUT B
B Channel Output
VCC
Supply Voltage
OUT A
A Channel Output
DESCRIPTION
A Channel Input signal-TTL or CMOS compatible.
The system ground pin. Internally connected to all circuitry, this pin provides
ground reference for the entire chip. This pin should be connected to a low
noise analog ground plane for optimum performance.
B Channel Input signal-TTL or CMOS compatible.
B Channel Driver output. For application purposes, this pin is connected via
a resistor to a gate of a MOSFET/IGBT.
Positive power-supply voltage input. This pin provides power to the entire
chip. The range for this voltage is from 4.5V to 25V.
A Channel Driver output. For application purposes, this pin is connected via
a resistor to a gate of a MOSFET/IGBT.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when
handling and assembling this component.
Note 1: Operating the device beyond the parameters listed as “Absolute Maximum Ratings” may cause permanent
damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not
guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed.
Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
Figure 4 - Characteristics Test Diagram
Vcc
10uF
25V
1 NC
2 In A
3 Gnd
4
In B
NC 8
7
Out A
Vcc 6
Out B 5
Agilent 1147A
Current Probe
1000 pF
4
Agilent 1147A
Current Probe
1000 pF
IXDN402 / IXDI402 / IXDF402
Typical Performance Characteristics
Fig. 3
Output Rise Time vs. Supply Voltage
CL = 100pF to 6800pF
90
Fig. 4
Output Fall Time vs. Supply Voltage
CL = 100pF to 6800pF
60
80
50
Fall Time (ns)
70
Rise Time (ns)
60
6800 pF
50
40
30
40
6800 pF
30
20
3900 pF
3900 pF
2200 pF
20
2200 pF
10
10
1000 pF
470 pF
100 pF
0
8
10
12
14
16
1000 pF
470 pF
100 pF
0
8
18
10
12
Supply Voltage (V)
Fig. 5
14
16
18
Supply Voltage (V)
Output Rise And Fall Times vs. Case Temperature
CL = 1000pF, Vcc = 18V
Fig. 6
Output Rise Times vs. Load Capacitance
12
90
80
10
tR
Rise Time (ns)
Time (ns)
8
tF
6
4
8V
70
10V
60
12V
14V
16V
18V
50
40
30
20
2
0
-60
10
0
-40
-20
0
20
40
60
80
100
120
0
140
1000
2000
Temperature (C)
Fig. 7
4000
5000
6000
7000
Max / Min Input vs. Temperature
CL = 1000 pF Vcc = 18V
Fig. 8
Output Fall Times vs. Load Capacitance
8V
3.5
45
10V
3.3
40
12V
14V
16V
18V
3.1
Max / Min Input Voltage
50
35
Fall Times (ns)
3000
Load Capacitance (pF)
30
25
20
15
10
5
MinimumInput High
2.9
2.7
2.5
MaximumInput Low
2.3
2.1
1.9
1.7
1.5
-60
0
0
1000
2000
3000
4000
5000
6000
7000
Load Capacitance (pF)
-40
-20
0
20
40
60
Temperature (C)
5
80
100
120
140
IXDN402 / IXDI402 / IXDF402
Fig. 9
100
Supply Current vs. Load Capacitance
Vcc = 18V
Supply Current vs. Frequency
Vcc = 18V
Fig. 10
1 MHz
1000
2 MHz
6800 pF
3900 pF
2200 pF
1000 pF
470 pF
100 pF
90
100
70
Supply Current (mA)
Supply Current (mA)
80
500 kHz
60
50
40
30
1
0.1
20
100 kHz
10
0
100
10
50 kHz
10 kHz
1000
0.01
1
10000
10
100
Fig. 12
Supply Current vs. Load Capacitance
Vcc = 12V
2 MHz
6800 pF
3900 pF
2200 pF
1000 pF
470 pF
100 pF
100
Supply Current (mA)
Supply Current (mA)
Supply Current vs. Frequency
Vcc = 12V
1 Mhz
80
70
60
50
500 kHz
40
30
20
10
1
0.1
100 kHz
50 kHz
10 kHz
10
1000
0.01
10000
1
10
Load Capacitance (pF)
Fig. 13
100
10000
1000
90
0
100
1000
Frequency (kHz)
Load Capacitance (pF)
Fig. 11
100
Supply Current vs. Load Capacitance
Vcc = 8V
100
1000
10000
Frequency (kHz)
Supply Current vs. Frequency
Vcc = 8V
Fig. 14
2 MHz
1000
90
70
60
1 MHz
50
40
500 kHz
30
10
1
0.1
20
10
0
100
6800 pF
3900 pF
2200 pF
1000 pF
470 pF
100 pF
100
Supply Current (mA)
Supply Current (mA)
80
100 kHz
50 kHz
10HkHz
1000
0.01
1
10000
Load Capacitance (pF)
10
100
Frequency (kHz)
6
1000
10000
IXDN402 / IXDI402 / IXDF402
Propagation Delay vs. Supply Voltage
CL=1000 pF Vin=5V@1KHz
Fig. 15
45
50
45
40
35
Propagation Delay (ns)
Propagation Delay (ns)
Propagation Delay vs. Input Voltage
CL = 1000 pF Vcc = 15V
Fig. 16
tONDLY
30
tOFFDLY
25
20
15
10
40
tONDLY
35
30
25
tOFFDLY
20
15
10
5
5
0
0
8
10
12
14
16
18
2
3
4
5
6
Supply Voltage (V)
Fig. 17
9
10
11
12
120
140
Quiescent SupplyCurrent vs. Temperature
Vcc = 18V, Vin=5V@1kHz, CL = 1000pF
Fig. 18
Propagation Delay Times vs. Temperature
CL = 1000pF, Vcc = 18V
Quiescent Vcc Input Current (mA)
0.8
35
tONDLY
30
Time (ns)
8
Input Voltage (V)
40
tOFFDLY
25
20
15
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-60
10
-60
-40
-20
0
20
40
60
80
100
120
140
-40
-20
0
20
Temperature (C)
Fig. 19
4
P Channel Output Source Current vs. Temperature
Vcc = 18V, CL = 1000 pF
60
80
100
N Channel Sink Output Current vs. Temperature
Vcc = 18V CL = 1000 pF
Fig. 20
4.5
3.5
3
2.5
2
1.5
1
0.5
0
-60
40
Temperature (C)
N Channel Output Current (A)
P Channel Output Current (A)
7
4
3.5
3
2.5
2
1.5
1
0.5
0
-40
-20
0
20
40
60
80
100
120
140
-60
Temperature (C)
-40
-20
0
20
40
60
Temperature (C)
7
80
100
120
140
Fig. 21 High State Output Resistance vs. Supply Voltage
Fig. 22
High State Output Resistance (Ohms)
Low State Output Resistance (Ohms)
IXDN402 / IXDI402 / IXDF402
Low State Output Resistance vs. Supply Voltage
4.5
8
7
6
5
4
3
2
1
4
3.5
3
2.5
2
1.5
1
0.5
0
0
7
9
11
13
15
17
19
21
23
25
7
9
11
Supply Voltage (V)
15
17
19
21
23
25
23
25
Supply Voltage (V)
Fig. 24
Vcc vs. P Channel Output Current
Fig. 23
13
Vcc vs. N Channel Source Output Current
5
0
N Channel Output Current (A
P Channel Output Current (A)
4.5
-0.5
-1
-1.5
-2
-2.5
4
3.5
3
2.5
2
1.5
1
-3
0.5
-3.5
0
7
9
11
13
15
17
19
21
23
25
7
Vcc (V)
9
11
13
15
17
Vcc (V)
8
19
21
IXDN402 / IXDI402 / IXDF402
PIN CONFIGURATIONS
1
NC
2
IN A
3
GND
4
INB
NC
8
1
NC
OUT A
7
2
IN A
VS 6
3
GND
OUT B 5
4
INB
8 Lead PDIP (PI)
8 Pin SOIC (SI)
IXDN402
1 NC
NC 16
NC
8
1
NC
OUT A
7
2
IN A
VS 6
3
GND
OUT B 5
4
INB
8 Lead PDIP (PI)
8 Pin SOIC (SI)
IXDI402
1 NC
NC 16
NC
8
OUT A
7
VS 6
OUT B 5
8 Lead PDIP (PI)
8 Pin SOIC (SI)
IXDF402
1 NC
NC 16
2 IN A
OUT A 15
2 IN A
OUT A 15
2 IN A
OUT A 15
3 NC
OUT A 14
3 NC
OUT A 14
3 NC
OUT A 14
4 GND
VCC 13
4 GND
VCC 13
4 GND
VCC 13
5 GND
VCC 12
5 GND
VCC 12
5 GND
VCC 12
6 NC
OUT B 11
6 NC
OUT B 11
6 NC
OUT B 11
7 IN B
OUT B 10
7 IN B
OUT B 10
7 IN B
OUT B 10
8 NC
NC 9
16 Pin SOIC
IXDN402SI-16
8 NC
NC 9
16 Pin SOIC
IXDI402SI-16
8 NC
NC 9
16 Pin SOIC
IXDF402SI-16
Supply Bypassing, Grounding Practices And Output Lead inductance
GROUNDING
In order for the design to turn the load off properly, the IXDN402
must be able to drain this 1.5A of current into an adequate
grounding system. There are three paths for returning current
that need to be considered: Path #1 is between the IXDN402
and its load. Path #2 is between the IXDN402 and its power
supply. Path #3 is between the IXDN402 and whatever logic is
driving it. All three of these paths should be as low in resistance
and inductance as possible, and thus as short as practical. In
addition, every effort should be made to keep these three
ground paths distinctly separate. Otherwise, the returning
ground current from the load may develop a voltage that would
have a detrimental effect on the logic line driving the IXDN402.
When designing a circuit to drive a high speed MOSFET
utilizing the IXDN402/IXDI402/IXDF402, it is very important to
observe certain design criteria in order to optimize performance
of the driver. Particular attention needs to be paid to Supply
Bypassing, Grounding, and minimizing the Output Lead
Inductance.
Say, for example, we are using the IXDN402 to charge a 1500pF
capacitive load from 0 to 25 volts in 25ns.
Using the formula: I= ∆V C / ∆t, where ∆V=25V C=1500pF &
∆t=25ns, we can determine that to charge 1500pF to 25 volts
in 25ns will take a constant current of 1.5A. (In reality, the
charging current won’t be constant, and will peak somewhere
around 2A).
OUTPUT LEAD INDUCTANCE
Of equal importance to Supply Bypassing and Grounding are
issues related to the Output Lead Inductance. Every effort
should be made to keep the leads between the driver and its
load as short and wide as possible. If the driver must be placed
farther than 2” (5mm) from the load, then the output leads
should be treated as transmission lines. In this case, a twistedpair should be considered, and the return line of each twisted
pair should be placed as close as possible to the ground pin
SUPPLY BYPASSING
In order for our design to turn the load on properly, the IXDN402
must be able to draw this 1.5A of current from the power supply
in the 25ns. This means that there must be very low impedance
between the driver and the power supply. The most common
method of achieving this low impedance is to bypass the power
supply at the driver with a capacitance value that is an order of
magnitude larger than the load capacitance. Usually, this
would be achieved by placing two different types of bypassing
capacitors, with complementary impedance curves, very close
to the driver itself. (These capacitors should be carefully
selected and should have low inductance, low resistance and
high-pulse current-service ratings). Lead lengths may radiate
at high frequency due to inductance, so care should be taken
to keep the lengths of the leads between these bypass
capacitors and the IXDN402 to an absolute minimum.
of the driver, and connected directly to the ground terminal
of the load.
9
IXDN402 / IXDI402 / IXDF402
IXYS Corporation
3540 Bassett St; Santa Clara, CA 95054
Tel: 408-982-0700; Fax: 408-496-0670
e-mail: [email protected]
www.ixys.com
IXYS Semiconductor GmbH
Edisonstrasse15 ; D-68623; Lampertheim
Tel: +49-6206-503-0; Fax: +49-6206-503627
e-mail: [email protected]
Directed Energy, Inc.
An IXYS Company
2401 Research Blvd. Ste. 108, Ft. Collins, CO 80526
Tel: 970-493-1901; Fax: 970-493-1903
e-mail: [email protected]
www.directedenergy.com
10
Doc #9200-0254 R2