HiPerFETTM MOSFET Q2-Class VDSS ID25 RDS(on) (Electrically Isolated Back Surface) trr ≤ 250 ns IXFR 38N80Q2 = = = 800 V 28 A Ω 240 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous Transient ±30 ±40 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 28 150 38 A A A EAR EAS TC = 25°C TC = 25°C 75 4.0 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 20 V/ns PD TC = 25°C 416 W TL 1.6 mm (0.063 in) from case for 10 s VISOL 50/60 Hz, RMS, t = 1 min ISOL = 1mA, t = 1 s FC Mounting Force G G = Gate S = Source °C °C °C 300 °C 2500 3000 V~ V~ z z z z z Weight 5 g Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 3mA 800 VGS(th) VDS = VGS, ID = 8 mA 2.0 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2004 IXYS All rights reserved TJ = 25°C TJ = 125°C D = Drain Double metal process for low gate resistance Silicon chip on DCB substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Epoxy meet UL 94 V-0, flammability classification Avalanche energy and current rated Fast intrinsic Rectifier Advantages z Symbol Isolated Back Surface D Features -55 ... +150 150 -55 ... +150 TJ TJM Tstg ISOPLUS247 (IXFR) z z Easy assembly Space savings High power density V 4.5 V ±200 nA 50 2 µA mA 240 mΩ DS99203(09/04) IXFR 38N80Q2 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = IT, pulse test 25 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss 37 S 8340 pF 890 pF 175 pF td(on) 20 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = IT 16 ns td(off) RG = 1.0 Ω (External), 60 ns 12 ns 190 nC 44 nC 88 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = IT Qgd RthJC 0.3 RthCK 0.15 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 38 A Repetitive; pulse width limited by TJM 150 A IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V 250 ns t rr QRM IRM ISOPLUS247 Outline IF = 25A, -di/dt = 100 A/µs, VR = 100 V 1 10 µC A Notes: 1. Test current IT = 19A 2. See IXFK38N80Q2 data sheet for characteristic curves IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 IXFR 38N80Q2 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 40 90 VGS = 10V 7V 35 8V 7V 70 30 6V 25 20 I D - Amperes I D - Amperes VGS = 10V 80 5.5V 15 10 60 6V 50 40 30 5.5V 20 5V 5 5V 10 0 0 0 1 2 3 4 5 6 7 8 9 10 0 3 6 9 V D S - Volts Fig. 3. Output Characteristics @ 125ºC 18 21 24 27 30 3.1 VGS = 10V 7V 6V VGS = 10V 2.8 R D S ( o n ) - Normalized 35 30 I D - Amperes 15 V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 40 5.5V 25 20 5V 15 10 5 2.5 2.2 1.9 I D = 38A 1.6 I D = 19A 1.3 1 0.7 0.4 0 0 2 4 6 8 10 12 V D S - Volts 14 16 18 -50 20 0 25 50 75 100 125 150 Fig. 6. Drain Current vs. Case Tem perature 0.5 ID25 Value vs. ID 30 2.8 2.6 -25 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to 27 VGS = 10V TJ = 125ºC 2.4 24 2.2 21 I D - Amperes R D S ( o n ) - Normalized 12 2 1.8 1.6 1.4 18 15 12 9 TJ = 25ºC 1.2 6 1 3 0.8 0 0 10 20 30 40 50 I D - Amperes © 2004 IXYS All rights reserved 60 70 80 90 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFR 38N80Q2 Fig. 8. Transconductance Fig. 7. Input Adm ittance 50 70 45 60 TJ = -40ºC 25ºC 125ºC 50 35 g f s - Siemens I D - Amperes 40 30 25 20 TJ = 125ºC 25ºC -40ºC 15 10 40 30 20 10 5 0 0 3.5 4 4.5 5 5.5 6 0 10 20 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 50 60 10 100 80 VG S - Volts I S - Amperes 40 Fig. 10. Gate Charge 120 60 TJ = 125ºC 40 9 VDS = 400V 8 I D = 19A 7 I G = 10mA 6 5 4 3 TJ = 25ºC 2 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 V S D - Volts 1 1.1 1.2 0 1.3 20 40 60 80 100 120 140 160 180 200 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 10000 1000 TJ = 150ºC C iss TC = 25ºC 100µs I D - Amperes Capacitance - picoFarads 30 I D - Amperes C oss 1000 25µs 1ms 100 10ms 10 R DS(on) Limit C rss DC f = 1MHz 100 1 0 5 10 15 20 25 30 35 40 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - Volts 1000 IXFR 38N80Q2 Fig. 13. Maxim um Transient Thermal Resistance R( t h ) J C - ºC / W 1.00 0.10 0.01 1 10 100 Pulse Width - milliseconds © 2004 IXYS All rights reserved 1000